公开(公告)号：US11710783B2

公开(公告)日：2023-07-25

申请号：US17528654

申请日：2021-11-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Tsung Kuo ,  Jiech-Fun Lu

IPC分类号： H01L29/737 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/7378 ,  H01L21/022 ,  H01L21/0337 ,  H01L21/31122 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/165 ,  H01L29/66242

摘要： Various embodiments of the present disclosure are directed towards a method for forming a bipolar junction transistor (BJT). A dielectric film is deposited over a substrate and comprises a lower dielectric layer, an upper dielectric layer, and an intermediate dielectric layer between the lower and upper dielectric layers. A first semiconductor layer is deposited over the dielectric film and is subsequently patterned to form an opening exposing the dielectric film. A first etch is performed into the upper dielectric layer through the opening to extend the opening to the intermediate dielectric layer. Further, the first etch stops on the intermediate dielectric layer and laterally undercuts the first semiconductor layer. Additional etches are performed to extend the opening to the substrate. A lower base structure and an emitter are formed stacked in and filling the opening, and the first semiconductor layer is patterned to form an upper base structure.

公开(公告)号：US20220384496A1

公开(公告)日：2022-12-01

申请号：US17883668

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Cheng ,  Chun-Tsung Kuo ,  Jiech-Fun Lu ,  Min-Ying Tsai ,  Chiao-Chun Hsu ,  Ching I Li

IPC分类号： H01L27/146

摘要： The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

公开(公告)号：US20220359595A1

公开(公告)日：2022-11-10

申请号：US17868996

申请日：2022-07-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsun-Kai Tsao ,  Cheng-Hsien Chou ,  Jiech-Fun Lu

IPC分类号： H01L27/146

摘要： Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a substrate. The substrate has a front-side surface and a back-side surface. An absorption enhancement structure is disposed along the back-side surface of the substrate and overlies the photodetector. The absorption enhancement structure includes a plurality of protrusions that extend outwardly from the back-side surface of the substrate. Each protrusion comprises opposing curved sidewalls.

公开(公告)号：US20220310692A1

公开(公告)日：2022-09-29

申请号：US17842005

申请日：2022-06-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ching-Chung Su ,  Jiech-Fun Lu

IPC分类号： H01L27/146

摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a photodetector disposed within a substrate. A grid structure is disposed over the substrate and the photodetector. A conductive layer is disposed between the grid structure and the substrate. A conductive contact extends into an upper surface of the substrate. The conductive layer is directly electrically coupled to the conductive contact.

公开(公告)号：US20220238662A1

公开(公告)日：2022-07-28

申请号：US17680194

申请日：2022-02-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Jiech-Fun Lu ,  Kuo-Hwa Tzeng ,  Shih-Pei Chou ,  Yu-Hung Cheng ,  Yeur-Luen Tu

IPC分类号： H01L29/40 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L21/324 ,  H01L21/66 ,  H01L21/311

摘要： Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.

公开(公告)号：US10784150B2

公开(公告)日：2020-09-22

申请号：US16394772

申请日：2019-04-25

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Ching-Chung Su ,  Jiech-Fun Lu ,  Jian Wu ,  Che-Hsiang Hsueh ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chun-Chieh Fang ,  Yu-Lung Yeh

IPC分类号： H01L21/764 ,  H01L21/762 ,  H01L21/308

摘要： A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

公开(公告)号：US20190252423A1

公开(公告)日：2019-08-15

申请号：US16383949

申请日：2019-04-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

摘要： A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US10276427B2

公开(公告)日：2019-04-30

申请号：US15990162

申请日：2018-05-25

申请人： Taiwan Semiconductor Manufacturing Company Ltd.

发明人： Ching-Chung Su ,  Jiech-Fun Lu ,  Jian Wu ,  Che-Hsiang Hsueh ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chun-Chieh Fang ,  Yu-Lung Yeh

IPC分类号： H01L21/764 ,  H01L21/762 ,  H01L21/308

摘要： A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

公开(公告)号：US20170278881A1

公开(公告)日：2017-09-28

申请号：US15079886

申请日：2016-03-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Wen Hsu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  U-Ting Chen ,  Shu-Ting Tsai ,  Hsiu-Yu Cheng

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

摘要： A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.

公开(公告)号：US20170200640A1

公开(公告)日：2017-07-13

申请号：US14993468

申请日：2016-01-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Shih-Pei Chou ,  Chen-Fa Lu ,  Jiech-Fun Lu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L21/32 ,  H01L21/762 ,  H01L23/532

CPC分类号： H01L21/0332 ,  H01L21/32 ,  H01L21/76224 ,  H01L21/76807 ,  H01L21/76898 ,  H01L23/481

摘要： A semiconductor structure comprises a substrate comprising an interlayer dielectric (ILD) and a silicon layer disposed over the ILD, wherein the ILD comprises a conductive structure disposed therein, a dielectric layer disposed over the silicon layer, and a conductive plug electrically connected with the conductive structure and extended from the dielectric layer through the silicon layer to the ILD, wherein the conductive plug has a length running from the dielectric layer to the ILD and a width substantially consistent along the length.