公开(公告)号：US09984918B2

公开(公告)日：2018-05-29

申请号：US15088126

申请日：2016-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ching-Chung Su ,  Jiech-Fun Lu ,  Jian Wu ,  Che-Hsiang Hsueh ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chun-Chieh Fang ,  Yu-Lung Yeh

IPC: H01L21/764 ,  H01L21/762

CPC classification number: H01L21/764 ,  H01L21/3083 ,  H01L21/76232

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

公开(公告)号：US11990493B2

公开(公告)日：2024-05-21

申请号：US17747514

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L21/02 ,  H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

公开(公告)号：US10784150B2

公开(公告)日：2020-09-22

申请号：US16394772

申请日：2019-04-25

Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

Inventor： Ching-Chung Su ,  Jiech-Fun Lu ,  Jian Wu ,  Che-Hsiang Hsueh ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chun-Chieh Fang ,  Yu-Lung Yeh

IPC: H01L21/764 ,  H01L21/762 ,  H01L21/308

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

公开(公告)号：US10276427B2

公开(公告)日：2019-04-30

申请号：US15990162

申请日：2018-05-25

Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

Inventor： Ching-Chung Su ,  Jiech-Fun Lu ,  Jian Wu ,  Che-Hsiang Hsueh ,  Ming-Chi Wu ,  Chi-Yuan Wen ,  Chun-Chieh Fang ,  Yu-Lung Yeh

IPC: H01L21/764 ,  H01L21/762 ,  H01L21/308

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.