公开(公告)号：US11990493B2

公开(公告)日：2024-05-21

申请号：US17747514

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L21/02 ,  H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.