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    SELECTIVE DEPOSITION FOR INTEGRATED CIRCUIT INTERCONNECT STRUCTURES
    53.
    发明申请
    SELECTIVE DEPOSITION FOR INTEGRATED CIRCUIT INTERCONNECT STRUCTURES 有权

    公开(公告)号：US20220277996A1

    公开(公告)日：2022-09-01

    申请号：US17745614

    申请日：2022-05-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hsin-Yen Huang ,  Shao-Kuan Lee ,  Cheng-Chin Lee ,  Hai-Ching Chen ,  Shau-Lin Shue

    IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

    Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

    Capping layer overlying dielectric structure to increase reliability
    54.
    发明授权
    Capping layer overlying dielectric structure to increase reliability 有权

    公开(公告)号：US11355430B2

    公开(公告)日：2022-06-07

    申请号：US16885378

    申请日：2020-05-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ting-Ya Lo ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee

    IPC: H01L23/522 ,  H01L23/538 ,  H01L21/768

    Abstract: Some embodiments relate to a semiconductor structure including an inter-level dielectric (ILD) layer overlying a substrate. A conductive via is disposed within the ILD layer. A plurality of conductive wires overlie the ILD layer. The plurality of conductive wires includes a first conductive wire laterally offset a second conductive wire. A dielectric structure is disposed laterally between the first and second conductive wires. The dielectric structure includes a first dielectric liner, a dielectric layer, and an air-gap. The air-gap is disposed between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is disposed along an upper surface of the dielectric structure. The dielectric capping layer continuously extends between opposing sidewalls of the dielectric structure and is laterally offset from the plurality of conductive wires.

    Selective deposition for integrated circuit interconnect structures
    55.
    发明授权
    Selective deposition for integrated circuit interconnect structures 有权

    公开(公告)号：US11335596B2

    公开(公告)日：2022-05-17

    申请号：US16577079

    申请日：2019-09-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hsin-Yen Huang ,  Shao-Kuan Lee ,  Cheng-Chin Lee ,  Hai-Ching Chen ,  Shau-Lin Shue

    IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

    Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

    Dielectric capping structure overlying a conductive structure to increase stability
    56.
    发明授权
    Dielectric capping structure overlying a conductive structure to increase stability 有权

    公开(公告)号：US11322395B2

    公开(公告)日：2022-05-03

    申请号：US16876432

    申请日：2020-05-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hsin-Yen Huang ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee ,  Ting-Ya Lo

    IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528

    Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) structure overlying a substrate. A conductive contact directly overlies the substrate and is disposed within the first ILD structure. A conductive wire directly overlies the conductive contact. A conductive capping layer overlies the conductive wire such that the conductive capping layer continuously extends along an upper surface of the conductive wire. A second ILD structure overlies the conductive capping layer. The second ILD structure is disposed along opposing sides of the conductive wire. A pair of air-gaps are disposed within the second ILD structure. The conductive wire is spaced laterally between the pair of air-gaps. A dielectric capping layer is disposed along an upper surface of the conductive capping layer. The dielectric capping layer is spaced laterally between the pair of air-gaps and is laterally offset from an upper surface of the first ILD structure.

    HYBRID INTERCONNECT STRUCTURE FOR SELF ALIGNED VIA
    59.
    发明申请
    HYBRID INTERCONNECT STRUCTURE FOR SELF ALIGNED VIA 有权

    公开(公告)号：US20210375749A1

    公开(公告)日：2021-12-02

    申请号：US16884480

    申请日：2020-05-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shin-Yi Yang ,  Ming-Han Lee ,  Shau-Lin Shue

    IPC: H01L23/522 ,  H01L21/768

    Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line. The first metal line includes a first conductive material disposed within a first dielectric layer over a substrate and a second conductive material disposed within the first dielectric layer and directly over a top of the first conductive material. The second conductive material is different from the first conductive material. A second dielectric layer is disposed over the first dielectric layer. A first via comprising a third conductive material is disposed within the second dielectric layer and on a top of the second conductive material. The second conductive material and the third conductive material have lower diffusion coefficients than the first conductive material.

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