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51.发明授权公开(公告)号：US07682221B2
公开(公告)日：2010-03-23
申请号：US11677450
申请日：2007-02-21
CPC分类号： B24B37/013 , B24B49/02 , B24B49/10 , B24B49/12 , G01B7/105 , G01B11/0683
摘要： A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.
摘要翻译： 化学机械抛光装置和方法可以使用涡流监测系统和光学监测系统。 来自监控系统的信号可以组合在输出线上并由计算机提取。 可以计算抛光垫的厚度。 涡流监测系统和光学监测系统可以测量基板上基本相同的位置。
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公开(公告)号：US20090253351A1
公开(公告)日：2009-10-08
申请号：US12433433
申请日：2009-04-30
申请人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
发明人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
CPC分类号： G01N19/02 , B24B37/013 , B24B49/16
摘要： A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要翻译： 描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。 抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。 顶表面的至少一部分与抛光表面基本共面。 提供传感器以测量基板接触构件的横向位移。 一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。
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53.发明授权Computer-implemented method for process control in chemical mechanical polishing 失效化学机械抛光过程控制计算机实现方法公开(公告)号：US07585202B2
公开(公告)日：2009-09-08
申请号：US11923082
申请日：2007-10-24
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译： 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。
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54.发明授权公开(公告)号：US07513818B2
公开(公告)日：2009-04-07
申请号：US10977479
申请日：2004-10-28
申请人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
发明人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/16 , G01N19/02
摘要： A system, method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要翻译： 描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。 抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。 顶表面的至少一部分与抛光表面基本共面。 提供传感器以测量基板接触构件的横向位移。 一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。
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公开(公告)号：US20080268643A1
公开(公告)日：2008-10-30
申请号：US12173772
申请日：2008-07-15
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B24B37/013 , B24B37/042 , B24B49/003 , B24B49/12
摘要： A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.
摘要翻译： CMP站可以通过使用由第一抛光晶片的在线计量站获得的数据来闭环控制，以影响后续抛光晶片的处理。 第一个晶片经过内联计量站的抛光和测量。 测量站在各点测量阵列电介质厚度，场介电厚度，阻挡残留厚度和金属残留厚度。 然后将数据输入算法，并计算抛光参数输出。 输出被发送到CMP站，用于补充或替换以前的抛光参数。 随后的晶片在CMP站上使用修改的抛光参数进行研磨。
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56.发明授权公开(公告)号：US07374477B2
公开(公告)日：2008-05-20
申请号：US10123917
申请日：2002-04-16
CPC分类号： B24B49/10 , B24B37/013 , B24B37/205 , B24B49/105 , B24B49/12
摘要： A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.
摘要翻译： 抛光系统可以具有可旋转的压板，固定到压板的抛光垫，用于将衬底保持在抛光垫上的载体头，以及涡流监测系统，其包括线圈或铁磁体，其至少部分延伸穿过抛光垫 。 抛光垫可以具有固定到抛光层的抛光层和线圈或铁磁体。 凹槽可以在抛光垫的透明窗口中形成。
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公开(公告)号：US07354334B1
公开(公告)日：2008-04-08
申请号：US11124420
申请日：2005-05-06
IPC分类号： B24B1/00
摘要： A polishing system can have a polishing pad with a polishing surface and a bottom surface that includes a recess with a thickness less than the thickness of the polishing pad. An in-situ monitoring module can be positioned in a cavity formed in part by the recess. A vent path is provided with an opening to the cavity.
摘要翻译： 抛光系统可以具有抛光垫，抛光垫具有抛光表面和底表面，该底表面包括厚度小于抛光垫厚度的凹槽。 原位监测模块可以定位在由凹部部分形成的空腔中。 排气通道设有通向空腔的开口。
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58.发明授权Conductive pad with ion exchange membrane for electrochemical mechanical polishing 失效带离子交换膜的导电垫用于电化学机械抛光公开(公告)号：US07344432B2
公开(公告)日：2008-03-18
申请号：US11555145
申请日：2006-10-31
申请人： Liang-Yun Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel A. Carl , Ralph Wadensweiler , Manoocher Birang , Paul D. Butterfield , Rashid A. Mavliev , Stan D. Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
发明人： Liang-Yun Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel A. Carl , Ralph Wadensweiler , Manoocher Birang , Paul D. Butterfield , Rashid A. Mavliev , Stan D. Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
CPC分类号： B24B37/046 , B24B27/0023 , B24B37/24 , B24B37/26 , B24D3/34 , B82Y30/00
摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
摘要翻译： 提供了一种用于处理基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。 电极设置在其间具有介电材料的抛光表面下方。 可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。 可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。
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公开(公告)号：US07294039B2
公开(公告)日：2007-11-13
申请号：US11467116
申请日：2006-08-24
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译： 一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底 在抛光台处，当使用端点算法检测到端点标准时抛光停止。
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公开(公告)号：US20070139043A1
公开(公告)日：2007-06-21
申请号：US11505659
申请日：2006-08-16
申请人： G. Miller , Boguslaw Swedek , Manoocher Birang
发明人： G. Miller , Boguslaw Swedek , Manoocher Birang
IPC分类号： G01B7/06
CPC分类号： B24B37/013 , B24B49/105 , G01B7/10 , H01L21/67253
摘要： An eddy current monitoring system may include an elongated core. One or more coils may be coupled with the elongated core for producing an oscillating magnetic field that may couple with one or more conductive regions on a wafer. The core may be translated relative to the wafer to provide improved resolution while maintaining sufficient signal strength. An eddy current monitoring system may include a DC-coupled marginal oscillator for producing an oscillating magnetic field at a resonant frequency, where the resonant frequency may change as a result of changes to one or more conductive regions. Eddy current monitoring systems may be used to enable real-time profile control.
摘要翻译： 涡流监视系统可以包括细长的核心。 一个或多个线圈可以与细长铁芯耦合以产生可与晶片上的一个或多个导电区域耦合的振荡磁场。 芯可以相对于晶片翻转以提供改善的分辨率，同时保持足够的信号强度。 涡流监测系统可以包括用于产生谐振频率的振荡磁场的DC耦合边缘振荡器，其中谐振频率可能由于对一个或多个导电区域的改变而改变。 涡流监视系统可用于实现实时配置文件控制。
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