公开(公告)号：US10475898B2

公开(公告)日：2019-11-12

申请号：US15938716

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkeun Chung ,  Jae-Jung Kim ,  Jinkyu Jang ,  Sangyong Kim ,  Hoonjoo Na ,  Dongsoo Lee ,  Sangjin Hyun

IPC: H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L27/11 ,  H01L29/06

Abstract: A semiconductor device includes first semiconductor patterns vertically stacked on a substrate and vertically spaced apart from each other, and a first gate electrode on the first semiconductor patterns. The first gate electrode comprises a first work function metal pattern on a top surface, a bottom surface, and sidewalls of respective ones of the first semiconductor patterns, a barrier pattern on the first work function metal pattern, and a first electrode pattern on the barrier pattern. The first gate electrode has a first part between adjacent ones of the first semiconductor patterns. The barrier pattern comprises a silicon-containing metal nitride layer. The barrier pattern and the first electrode pattern are spaced apart from the first part.

公开(公告)号：US09991357B2

公开(公告)日：2018-06-05

申请号：US15186982

申请日：2016-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyeol Song ,  Wandon Kim ,  Hoonjoo Na ,  Suyoung Bae ,  Hyeok-Jun Son ,  Sangjin Hyun

IPC: H01L27/088 ,  H01L29/51 ,  H01L27/085 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/085 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518

Abstract: A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate electrodes on the separate active regions. Different high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. Different quantities of high-k dielectric layers may be between the separate active regions and the respective gate electrodes on the active regions. The different high-k dielectric layers may include different work-function adjusting materials.