公开(公告)号：US20240419125A1

公开(公告)日：2024-12-19

申请号：US18671307

申请日：2024-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hansol KIM ,  Hyungbin NOH ,  Heeyoung YUN ,  Jooho LEE

IPC: G04C10/04 ,  G04G17/04 ,  H01Q1/27

Abstract: According to an embodiment, an electronic device may include: a battery, a retaining member comprising a support disposed on one surface of the battery and configured to function as an antenna corresponding to a first frequency band, and a printed circuit board disposed on an other surface of the battery, the printed circuit board including a communication circuit electrically connected to the retaining member. The electronic device may include a switch configured to electrically connect at least one passive element among multiple passive elements and the retaining member, a memory, and at least one processor, comprising processing circuitry, operatively connected to the communication circuit, the switch, and the memory. According to an embodiment, at least one processor, individually and/or collectively, may be configured to: identify a remaining capacity of the battery; identify information regarding a passive element to be connected to the retaining member, based on the identified remaining capacity of the battery and the first frequency band; select at least one passive element among the multiple passive elements, based on the identified information regarding a passive element; and control the switch such that the at least one selected passive element and the retaining member are electrically connected.

公开(公告)号：US20240243164A1

公开(公告)日：2024-07-18

申请号：US18409957

申请日：2024-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho LEE ,  Yong-Hee CHO ,  Jinhong KIM ,  Changsoo LEE ,  Sung HEO

IPC: H01G4/30 ,  H10B12/00

CPC classification number: H01L28/65 ,  H01L28/75 ,  H01L28/91 ,  H10B12/315

Abstract: Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.

公开(公告)号：US20240234031A1

公开(公告)日：2024-07-11

申请号：US18351171

申请日：2023-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae HAN ,  Jeonggyu SONG ,  Beomseok KIM ,  Cheheung KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/008

Abstract: A semiconductor device includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer between the first electrode and the second electrode and including a metal oxide represented by MaOb, and a leakage current reducing layer on the dielectric layer between the first electrode and the second electrode and including an inorganic compound represented by Alx1Lx2Oy1Xy2, where a, b, M, L, X, x1, x2, y1, and y2 are as described in the description.

公开(公告)号：US20240213303A1

公开(公告)日：2024-06-27

申请号：US18347938

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boeun PARK ,  Haeryong KIM ,  Euncheol DO ,  Cheheung KIM ,  Jooho LEE

IPC: H01G4/08 ,  H01G4/33 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00 ,  H01G4/008

CPC classification number: H01L28/56 ,  H01G4/085 ,  H01G4/33 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94 ,  H10B12/31 ,  H01G4/008

Abstract: Provided is a capacitor, a semiconductor device including the same, and an electronic apparatus including the semiconductor device, wherein the capacitor includes a first electrode including a first metal ion, a second electrode arranged spaced apart from the first electrode, a dielectric layer provided between the first electrode and the second electrode, and an interfacial layer provided between the first electrode and the dielectric layer and including a compound represented by MxOyNz, in which a diffusion energy barrier value of M is equal to or greater than a diffusion energy barrier value of the first metal ion.

公开(公告)号：US20240170212A1

公开(公告)日：2024-05-23

申请号：US18350600

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Narae HAN ,  Beomseok KIM ,  Cheheung KIM ,  Jooho LEE ,  Wonsik CHOI

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/1236

Abstract: A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode; a second electrode disposed apart from the first electrode; a dielectric film between the first electrode and the second electrode; and a leakage current reducing layer provided on the dielectric film between the first electrode and the second electrode and including MxAlyOz.

公开(公告)号：US20230420487A1

公开(公告)日：2023-12-28

申请号：US18462909

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01G4/018 ,  H01L23/66

CPC classification number: H01L28/56 ,  H01L23/66 ,  H01L28/75 ,  H01L2223/6661

Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

公开(公告)号：US20230102906A1

公开(公告)日：2023-03-30

申请号：US17715473

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong KIM ,  Yongsung KIM ,  Jiwoon PARK ,  Jooho LEE ,  Yong-Hee CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

公开(公告)号：US20220173209A1

公开(公告)日：2022-06-02

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Yong-Hee CHO ,  Seungwoo JANG ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

公开(公告)号：US20220140066A1

公开(公告)日：2022-05-05

申请号：US17307592

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02

Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

公开(公告)号：US20210328004A1

公开(公告)日：2021-10-21

申请号：US17098915

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Boeun PARK ,  Younggeun PARK ,  Jooho LEE

IPC: H01L49/02 ,  H01L23/66

Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.