公开(公告)号：US20180027196A1

公开(公告)日：2018-01-25

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US09520431B2

公开(公告)日：2016-12-13

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

公开(公告)号：US09360607B1

公开(公告)日：2016-06-07

申请号：US14597821

申请日：2015-01-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Wei Zheng ,  Yin Qian ,  Chen-Wei Lu ,  Jin Li

IPC: H04N5/335 ,  G02B5/20 ,  H04N9/04 ,  G02B5/22 ,  H04N5/353 ,  H04N5/378

CPC classification number: G02B5/201 ,  G02B5/22 ,  G02B5/24 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/3532 ,  H04N5/378 ,  H04N9/045

Abstract: A color filter array for use on a color image sensor includes an oxide grid having sidewalls arranged to define openings in the oxide grid. Each one of the openings is to be disposed over a corresponding pixel cell of the color image sensor. Oxide support structures are disposed in an interior region of each opening in the oxide grid over a corresponding pixel cell of the color image sensor. The openings in the oxide grid are filled with color filter material of a corresponding color filter. A surface tension between each oxide support structure and the surrounding color filter material of the color filter is adapted to provide uniform thickness for the color filters within the corresponding openings in the oxide grid.

Abstract translation: 用于彩色图像传感器的滤色器阵列包括具有设置成在氧化物栅格中限定开口的侧壁的氧化物栅格。 开口中的每一个将被布置在彩色图像传感器的相应像素单元上。 氧化物支撑结构设置在彩色图像传感器的相应像素单元上的氧化物网格中的每个开口的内部区域中。 氧化物网格中的开口用相应滤色器的滤色器材料填充。 每个氧化物载体结构和滤色器的周围滤色器材料之间的表面张力适于为氧化物网格中的相应开口内的滤色器提供均匀的厚度。