公开(公告)号：US10693061B2

公开(公告)日：2020-06-23

申请号：US16276094

申请日：2019-02-14

Applicant: Newport Fab, LLC

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00 ,  H01L27/24 ,  H01L23/48 ,  H01L23/66 ,  H01L23/00

Abstract: An IC (“integrated circuit”) chip includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. An active device is situated in the substrate. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. In another approach, the PCM RF switch is situated in or above a first metallization level, and a dedicated heat spreader is situated under the PCM RF switch. Alternatively, a PCM RF switch is situated in a flip chip, an active device is situated in the IC chip, and the flip chip is situated over the IC chip forming a composite device.

公开(公告)号：US20200144497A1

公开(公告)日：2020-05-07

申请号：US16733502

申请日：2020-01-03

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil El-Hinnawy ,  Michael J. DeBar

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.

公开(公告)号：US20200136041A1

公开(公告)日：2020-04-30

申请号：US16729180

申请日：2019-12-27

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil El-Hinnawy ,  Michael J. DeBer

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM) and a heating element underlying an active segment of the PCM, the PCM and heating element being situated over a substrate. A contact dielectric is over the PCM. PCM contacts have upper portions and uniform plate slot lower portions. The uniform plate slot lower portions have a total plate resistance RPLATE, and a total plate slot interface resistance RPLATE-INT. The upper portions have a total capacitance CUPPER to the uniform plate slot lower portions, and the PCM has a total capacitance CPCM to the substrate. The uniform plate slot lower portions significantly reduce a product of (RPLATE+RPLATE-INT) and (CUPPER+CPCM). As an alternative to the uniform plate slot lower portions, PCM contacts have segmented lower portions. The segmented lower portions significantly reduce CUPPER.

公开(公告)号：US20200111953A1

公开(公告)日：2020-04-09

申请号：US16707914

申请日：2019-12-09

Applicant: Newport Fab, LLC aba Jazz Semiconductor

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  David J. Howard ,  Michael J. DeBar ,  Nabil El-Hinnaway

IPC: H01L45/00 ,  H01L23/66

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element, underlying an active segment of the PCM and extending outward and transverse to the PCM, are provided. Lower portions of PCM contacts for connection to passive segments of the PCM are formed, wherein the passive segments extend outward and are transverse to the heating element. Upper portions of the PCM contacts are formed from a lower interconnect metal. Heating element contacts are formed cross-wise to the PCM contacts. The heating element contacts can comprise a top interconnect metal directly connecting with terminal segments of the heating element. The heating element contacts can comprise a top interconnect metal and intermediate metal segments for connecting with the terminal segments of the heating element.

公开(公告)号：US20200091424A1

公开(公告)日：2020-03-19

申请号：US16677450

申请日：2019-11-07

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil EI-Hinnawy ,  Michael J. DeBar ,  David J. Howard

IPC: H01L45/00

Abstract: In fabricating a radio frequency (RF) switch, a phase-change material (PCM) and a heating element underlying an active segment of the PCM are provided. A contact uniformity support layer is formed over the PCM. The PCM and the contact uniformity support layer are patterned. A contact dielectric is formed over the contact uniformity support layer. Slot lower portions of PCM contacts are formed extending through the contact dielectric and through the contact uniformity support layer, and connected to passive segments of the PCM. Wide upper portions of the PCM contacts are formed over the contact dielectric and over the slot lower portions of the PCM contacts. The contact dielectric separates the wide upper portions of the PCM contacts from the heating element so as to reduce parasitic capacitance of the RF switch. The contact uniformity support layer maintains a substantially constant thickness of the passive segments of the PCM.

公开(公告)号：US10593876B2

公开(公告)日：2020-03-17

申请号：US16534328

申请日：2019-08-07

Applicant: Newport Fab, LLC

Inventor： David J. Howard ,  Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose

IPC: H01L45/00

Abstract: A semiconductor device includes a substrate, an integrated passive device (IPD), and a phase-change material (PCM) radio frequency (RF) switch. The PCM RF switch includes a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM, with a heater line underlying an active segment of the PCM. The PCM RF switch is situated over a heat spreader that is situated over the substrate. The heat spreader and/or the substrate dissipate heat generated by the heating element and reduce RF noise coupling between the PCM RF switch and the IPD. An electrically insulating layer can be situated between the heat spreader and the substrate. In another approach, the PCM RF switch is situated over an RF isolation region that allows the substrate to dissipate heat and that reduces RF noise coupling.

公开(公告)号：US20200058872A1

公开(公告)日：2020-02-20

申请号：US16574471

申请日：2019-09-18

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Jefferson E. Rose ,  Gregory P. Slovin ,  David J. Howard ,  Michael J. DeBar ,  Nabil El-Hinnawy

IPC: H01L45/00

Abstract: In manufacturing a radio frequency (RF) switch, a heat spreader is provided. A first dielectric is deposited over the heat spreader. A trench is etched in the first dielectric. A heating element is deposited in the trench and over at least a portion of the first dielectric. A thermally conductive and electrically insulating material is deposited over at least the heating element, where the thermally conductive and electrically insulating material is self-aligned with the heating element. A conformability support layer is optionally deposited over the thermally conductive and electrically insulating material and the first dielectric. A phase-change material is deposited over the optional conformability support layer and the underlying thermally conductive and electrically insulating material and the first dielectric.

公开(公告)号：US20200058869A1

公开(公告)日：2020-02-20

申请号：US16546211

申请日：2019-08-20

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  David J. Howard ,  Jefferson E. Rose ,  Michael J. DeBar ,  Nabil EI-Hinnawy

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a heating element, a nugget, a phase-change material (PCM), and input/output contacts. The nugget comprises thermally conductive and electrically insulating material, and is situated on top of the heating element. The PCM has an active segment approximately situated over the nugget, and passive segments approximately situated under the input/output contacts. The PCM RF switch may include thermally resistive material adjacent to first and second sides of the heating element, and/or adjacent to first and second sides of the nugget. The PCM RF switch may include a heat valve under the heating element

公开(公告)号：US20200058863A1

公开(公告)日：2020-02-20

申请号：US16221252

申请日：2018-12-14

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Michael J. DeBar ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a heating element, a phase-change material (PCM) situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM. The heating element can have a heater line underlying an active segment of the PCM. Alternatively, the heating element can have a split heater lines underlying an active segment of the PCM. The split heater lines increase an area of the active segment of the PCM and reduce a heater-to-PCM parasitic capacitance. A fan-out structure having fan-out metal can connect the heater line to a heater contact. The fan-out structure reduces heat generation outside the active segment of the PCM and reduces a heater contact-to-PCM parasitic capacitance. The fan-out structure can have dielectric segments interspersed between the fan-out metal to reduce dishing.

公开(公告)号：US20200058851A1

公开(公告)日：2020-02-20

申请号：US16274998

申请日：2019-02-13

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00 ,  H01L23/48 ,  H01L23/522 ,  H01L23/525 ,  H01L23/66 ,  H01L23/00

Abstract: A semiconductor device includes a substrate and a phase-change material (PCM) radio frequency (RF) switch, having a heating element, a PCM situated over the heating element, and PCM contacts situated over passive segments of the PCM. The heating element extends transverse to the PCM and underlies an active segment of the PCM. In one approach, the PCM RF switch is situated over the substrate, and the substrate is a heat spreader for the PCM RF switch. An integrated passive device (IPD) is disposed in an interlayer dielectric above the PCM RF switch, and is a metal resistor, a metal-oxide-metal (MOM) capacitor, and/or and inductor. In another approach, the PCM RF switch is disposed in an interlayer dielectric above the IPD, and the IPD is a poly resistor and/or a capacitor.