公开(公告)号：US09384809B2

公开(公告)日：2016-07-05

申请号：US13472789

申请日：2012-05-16

Applicant: Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue

Inventor： Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue

IPC: G11C5/06 ,  G11C8/14 ,  G11C11/408

Abstract: A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.

公开(公告)号：US08629457B2

公开(公告)日：2014-01-14

申请号：US13005719

申请日：2011-01-13

Applicant: Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

Inventor： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC: H01L33/18

CPC classification number: H01L33/16 ,  H01L33/007 ,  H01L33/32

Abstract: A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.

Abstract translation: 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。

公开(公告)号：US08576636B2

公开(公告)日：2013-11-05

申请号：US13175090

申请日：2011-07-01

Applicant: Kiyoshi Kato ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

Inventor： Kiyoshi Kato ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

IPC: G11C11/34

CPC classification number: H01L27/1156 ,  G11C11/404 ,  G11C16/0441 ,  H01L27/1207

Abstract: A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.

Abstract translation: 包括在存储单元阵列中的多个存储单元被分成多个块，每个多行。 公共位线通过块中的选择晶体管电连接到分割位线。 一个存储单元包括第一晶体管，第二晶体管和电容器。 第一晶体管包括第一沟道形成区。 第二晶体管包括第二沟道形成区域。 第一沟道形成区域包括与第二沟道形成区域的半导体材料不同的半导体材料。

公开(公告)号：US20130267382A1

公开(公告)日：2013-10-10

申请号：US13994174

申请日：2011-08-09

Applicant: Hiroki Inoue ,  Takeshige Miyazaki

Inventor： Hiroki Inoue ,  Takeshige Miyazaki

IPC: B60W10/06 ,  B60W10/11

CPC classification number: B60W20/40 ,  B60K6/387 ,  B60K6/48 ,  B60K2006/4808 ,  B60L7/18 ,  B60L11/14 ,  B60L15/2009 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/423 ,  B60L2240/461 ,  B60L2250/24 ,  B60L2250/26 ,  B60W10/06 ,  B60W10/08 ,  B60W10/11 ,  B60W20/00 ,  B60W20/14 ,  B60W20/15 ,  B60W30/18 ,  B60W30/18127 ,  B60W30/19 ,  B60W50/06 ,  B60W2540/103 ,  B60W2540/12 ,  B60W2540/14 ,  B60W2710/0666 ,  B60W2710/083 ,  B60Y2400/71 ,  Y02T10/6221 ,  Y02T10/626 ,  Y02T10/6286 ,  Y02T10/645 ,  Y02T10/70 ,  Y02T10/7077 ,  Y02T10/72 ,  Y02T10/7275 ,  Y10T477/26 ,  Y10T477/68

Abstract: This power transmission control device is applied to a hybrid vehicle which includes an internal combustion engine and a motor (MG) as power sources. The power transmission control device includes a manual transmission and a friction clutch. When a clutch enters a completely disengaged state as a result of operation of a clutch pedal by a driver in a state where MG torque is adjusted to regeneration torque acting in a direction for decelerating the vehicle, the magnitude of the regeneration torque is decreased to “minute value A which is greater than zero,” and then maintained at the minute value A. Much energy generated as a result of regeneration can be stored in a battery (see the area shown by dots) as compared with the case where the regeneration torque is adjusted to zero immediately after the clutch enters the completely disengaged state. Accordingly, energy efficiency (fuel efficiency) is improved.

Abstract translation: 该动力传递控制装置适用于作为动力源的内燃机和电动机（MG）的混合动力车辆。 动力传递控制装置包括手动变速器和摩擦离合器。 当离合器由于驾驶员在将MG转矩调节为沿着使车辆减速的方向作用的再生转矩的状态下由驾驶员进行的离合器踏板的操作而进入完全分离状态时，再生转矩的大小减小到“ 分数值A大于零“，然后维持在分钟值A.与再生转矩（例如，再生转矩）的情况相比，能够将生成的再生结果所产生的许多能量存储在电池（见点所示的区域） 在离合器进入完全脱离状态之后立即调整为零。 因此，能量效率（燃料效率）提高。

公开(公告)号：US20130190133A1

公开(公告)日：2013-07-25

申请号：US13825575

申请日：2011-08-09

Applicant: Hiroki Inoue ,  Takeshige Miyazaki

Inventor： Hiroki Inoue ,  Takeshige Miyazaki

IPC: B60W20/00

CPC classification number: B60W20/30 ,  B60K6/387 ,  B60K6/48 ,  B60K6/54 ,  B60K6/547 ,  B60K2006/4808 ,  B60K2006/4841 ,  B60L15/2054 ,  B60W10/08 ,  B60W10/10 ,  B60W10/11 ,  B60W20/00 ,  B60W20/10 ,  B60W20/40 ,  B60W30/19 ,  B60W2540/14 ,  B60W2540/16 ,  B60W2540/165 ,  Y02T10/6221 ,  Y02T10/626 ,  Y02T10/645 ,  Y02T10/72 ,  Y02T10/7275 ,  Y10S903/902 ,  Y10T477/26

Abstract: This power transmission control device is applied to a hybrid vehicle, includes a manual transmission, a friction clutch, and a speed-reduction-ratio changeover mechanism. The speed-reduction-ratio changeover mechanism can change the speed reduction ratio of a second shaft connected to an output shaft of the manual transmission in relation to a first shaft connected to an output shaft of the vehicle motor. The speed reduction ratio of drive wheels to the output shaft of the vehicle motor is changed by changing the speed reduction ratio of the second shaft in relation to the first shaft. The operation for changing the speed reduction ratio is performed while a driver is operating a clutch pedal. Namely, while the driver is performing some operation, he or she receives a shock generated as a result of speed-reduction-ratio change operation. Accordingly, the driver becomes less likely to sense such a shock.

Abstract translation: 该动力传递控制装置适用于混合动力车辆，其包括手动变速器，摩擦离合器和减速比切换机构。 减速比切换机构可以相对于连接到车辆马达的输出轴的第一轴改变与手动变速器的输出轴相连接的第二轴的减速比。 通过改变第二轴相对于第一轴的减速比来改变驱动轮到车辆马达的输出轴的减速比。 当驾驶员操作离合器踏板时，执行用于改变减速比​​的操作。 也就是说，当驾驶员进行一些操作时，他或她接收到由于减速比改变操作而产生的冲击。 因此，驾驶员不太可能感觉到这样的震动。

公开(公告)号：US08482974B2

公开(公告)日：2013-07-09

申请号：US13022292

申请日：2011-02-07

Applicant: Toshihiko Saito ,  Takanori Matsuzaki ,  Shuhei Nagatsuka ,  Hiroki Inoue

Inventor： Toshihiko Saito ,  Takanori Matsuzaki ,  Shuhei Nagatsuka ,  Hiroki Inoue

IPC: G11C11/14

CPC classification number: G11C11/405 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/40

Abstract: A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line.

Abstract translation: 半导体器件包括第一信号线，第二信号线，存储单元和电位转换器电路。 存储单元包括：第一晶体管，包括第一栅极电极，第一源电极，第一漏极电极和第一沟道形成区域; 第二晶体管，包括第二栅极电极，第二源极电极，第二漏极电极和第二沟道形成区域; 和电容器。 第一沟道形成区域和第二沟道形成区域包括不同的半导体材料。 第二漏电极，电容器的一个电极和第一栅电极彼此电连接。 第二栅极通过第二信号线电连接到电位转换器电路。

公开(公告)号：US08441841B2

公开(公告)日：2013-05-14

申请号：US13027546

申请日：2011-02-15

Applicant: Shuhei Nagatsuka ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Hiroki Inoue

Inventor： Shuhei Nagatsuka ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Hiroki Inoue

IPC: G11C11/24

CPC classification number: G11C8/08 ,  G11C11/413

Abstract: An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided.

Abstract translation: 目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。 半导体器件包括具有宽栅半导体例如氧化物半导体的存储单元，并且该半导体器件包括用于输出低于用于从存储单元读取数据的参考电位的电位的电位转换电路。 通过使用宽栅半导体，可以提供能够充分降低包含在存储单元中并能够长时间保持数据的晶体管的截止电流的半导体器件。

公开(公告)号：US20130009078A1

公开(公告)日：2013-01-10

申请号：US13532000

申请日：2012-06-25

Applicant: Hiroki Inoue ,  Kazuhiro Kobayashi ,  Nobuhiro Tani ,  Toshihide Suzuki

Inventor： Hiroki Inoue ,  Kazuhiro Kobayashi ,  Nobuhiro Tani ,  Toshihide Suzuki

IPC: G01N21/86

CPC classification number: G01B11/24 ,  B29D30/3007 ,  B29D2030/3064 ,  G01B11/026

Abstract: Laser light is emitted to a sheet member wound on a forming drum in a range which includes the entire width of the sheet member and distance data on a distance to a reflecting surface is obtained, using a two-dimensional laser sensor which has a detection range along a drum circumferential direction, while moving either the two-dimensional laser sensor or the forming drum in a drum width direction. Further, the positions of width-directional opposite end sections of the sheet member are calculated on the basis of the obtained distance data.

Abstract translation: 在包含片状部件的整个宽度的范围内，将激光发射到卷绕在成形鼓上的片状部件，并使用具有检测范围的二维激光传感器获得与反射面的距离的距离数据 同时沿着鼓的圆周方向移动二维激光传感器或成形鼓的鼓宽度方向。 此外，基于获得的距离数据来计算片状构件的宽度方向的相对端部的位置。

公开(公告)号：US20120276715A1

公开(公告)日：2012-11-01

申请号：US13395795

申请日：2011-06-17

Applicant: Tsutomu Hori ,  Shin Harada ,  Makoto Sasaki ,  Hiroki Inoue ,  Kyoko Okita ,  Yasuo Namikawa ,  Satomi Itoh

Inventor： Tsutomu Hori ,  Shin Harada ,  Makoto Sasaki ,  Hiroki Inoue ,  Kyoko Okita ,  Yasuo Namikawa ,  Satomi Itoh

IPC: H01L21/762

CPC classification number: H01L29/7802 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed.

Abstract translation: 制备具有支撑部分和第一和第二碳化硅衬底的连接衬底。 第一碳化硅衬底具有连接到支撑部分的第一背面，第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧面。 第二碳化硅衬底具有连接到支撑部分的第二背侧表面，第二前侧表面和将第二背面和第二前侧表面彼此连接并在第一前侧面之间形成间隙的第二侧表面 侧表面和第二侧表面。 形成用于填充间隙的填充部分。 然后，对第一和第二前表面进行抛光。 然后，将填充部分移除。 然后，形成用于封闭间隙的封闭部分。

公开(公告)号：US20120051116A1

公开(公告)日：2012-03-01

申请号：US13206547

申请日：2011-08-10

Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

IPC: G11C11/24

CPC classification number: G11C16/0433 ,  G11C11/404

Abstract: A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.

Abstract translation: 提供具有新颖结构的半导体器件及其驱动方法。 一种半导体器件包括：非易失性存储单元，包括包括氧化物半导体的写入晶体管，包括与写入晶体管的半导体材料不同的半导体材料的读取P沟道晶体管，以及电容器。 通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及 然后关闭写入晶体管，使得节点中保持预定量的电荷。 在保持期间，将存储单元置于选择状态，将读取晶体管的源电极和漏电极设定为相同的电位，由此保存存储在节点中的电荷。