Invention Grant
- Patent Title: Semiconductor device and driving method of semiconductor device
- Patent Title (中): 半导体器件及其驱动方法
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Application No.: US13027546Application Date: 2011-02-15
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Publication No.: US08441841B2Publication Date: 2013-05-14
- Inventor: Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
- Applicant: Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-035386 20100219
- Main IPC: G11C11/24
- IPC: G11C11/24

Abstract:
An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided.
Public/Granted literature
- US20110205785A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
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