公开(公告)号：US10439162B2

公开(公告)日：2019-10-08

申请号：US15533443

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Hongwei Tian ,  Lei Chen ,  Zengsheng He

IPC: G09G3/3225 ,  H01L51/52 ,  H01L27/32

Abstract: The present application discloses a display panel having a display unit and an encapsulating structure for encapsulating the display unit. The encapsulating structure includes a growth layer on the display unit; and a graphene layer on a side of the growth layer distal to the display unit.

公开(公告)号：US20180198086A1

公开(公告)日：2018-07-12

申请号：US15533443

申请日：2016-11-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanan Niu ,  Hongwei Tian ,  Lei Chen ,  Zengsheng He

IPC: H01L51/52 ,  H01L27/32 ,  G09G3/3225

CPC classification number: H01L51/5237 ,  G09G3/3225 ,  G09G2310/0264 ,  H01L27/3244 ,  H01L51/5253

Abstract: The present application discloses a display panel having a display unit and an encapsulating structure for encapsulating the display unit. The encapsulating structure includes a growth layer on the display unit; and a graphene layer on a side of the growth layer distal to the display unit.

公开(公告)号：US09768312B2

公开(公告)日：2017-09-19

申请号：US14913048

申请日：2015-07-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongwei Tian ,  Yanan Niu ,  Zuqiang Wang ,  Liang Sun

IPC: H01L29/786 ,  H01L21/77 ,  H01L21/02 ,  H01L21/225 ,  H01L21/30 ,  H01L21/306 ,  H01L27/12 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/2251 ,  H01L21/3003 ,  H01L21/30604 ,  H01L21/77 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/1033 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78696

Abstract: Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.