公开(公告)号：US20140265855A1

公开(公告)日：2014-09-18

申请号：US14176365

申请日：2014-02-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  Kartik Ramaswamy ,  James D. Carducci ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/3233

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段抑制电极，其具有单独偏置的段以控制电子束密度分布。