Silacyclohexane compound, a method of preparing it and a liquid crystal
composition containing it
    52.
    发明授权
    Silacyclohexane compound, a method of preparing it and a liquid crystal composition containing it 失效
    硅环己烷化合物,其制备方法和含有它的液晶组合物

    公开(公告)号:US5547606A

    公开(公告)日:1996-08-20

    申请号:US322549

    申请日:1994-10-13

    摘要: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes hydrogen, a linear-chain alkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, a fluoroalkyl group with a carbon number of 1-10 in which one or two hydrogen atoms are substituted by florine atom(s), or an alkenyl group with a carbon number of 2-8. For the groups ##STR2## at least one of these is a trans-1-sila-1,4-cyclohexylene or trans-4-sila-1,4-cyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3, and the other denotes a trans-1,4-cyclohexylene group. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group (R is the same as defined earlier). Y denotes H or F. Z denotes H or F.

    摘要翻译: 由以下通式(I)表示的硅环己烷化合物。 (I)在该式中,R表示氢,碳数为1〜10的直链烷基,碳数为3〜8的支链烷基,碳数为烷氧基烷基 数为2-7,碳数为1-10的氟代烷基,其中一个或两个氢原子被氟原子取代,或碳数为2-8的烯基。 对于组,其中至少一个是位于1或4位的硅具有取代基的反式-1-硅烷-1,4-亚环己基或反式-4-硅烷-1,4-亚环己基, s)H,F,Cl或CH 3,另一个表示反式-1,4-亚环己基。 X表示CN,F,Cl,CF 3,CF 2 Cl,CHFCl,OCF 3,OCHF 2,OCF 2 Cl,OCHFCl,R或OR基团(R与前述相同)。 Y表示H或F.Z表示H或F.

    Positive resist compositions and patterning process
    58.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US08541158B2

    公开(公告)日:2013-09-24

    申请号:US13013143

    申请日:2011-01-25

    CPC分类号: G03F7/0397 G03F7/2041

    摘要: A positive resist composition is provided comprising an acid generator, a resin component which generates resin-solubilizing groups under the action of acid so that the resin component becomes soluble in an alkaline developer, at least some resin-solubilizing groups being carboxyl groups, and a compound for activating or condensing a carboxyl group. When processed by the lithography, the resist composition forms a resist pattern having a very high resolution and good mask fidelity.

    摘要翻译: 提供了一种正性抗蚀剂组合物,其包含酸产生剂,在酸的作用下产生树脂增溶基团的树脂组分,使得树脂组分变得可溶于碱性显影剂,至少一些树脂增溶基团为羧基, 用于活化或缩合羧基的化合物。 当通过光刻处理时,抗蚀剂组合物形成具有非常高的分辨率和良好的掩模保真度的抗蚀剂图案。

    Resist-modifying composition and pattern forming process
    60.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号:US08329384B2

    公开(公告)日:2012-12-11

    申请号:US12785930

    申请日:2010-05-24

    IPC分类号: G03F7/00 G03F7/004 G03F7/40

    摘要: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译: 图案化工艺包括(1)将第一正性抗蚀剂组合物涂覆在基材上,烘烤,曝光,曝光后烘烤和碱显影以形成第一抗蚀剂图案,(2)将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理,(3)涂布第二正性抗蚀剂组合物,烘烤,曝光,曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式(1)的重复单元的基础树脂,其中A1是亚烷基,R1是H或甲基,R2是烷基或键合在一起形成含氮杂环和醇类溶剂。