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    LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE
    51.
    发明申请
    LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE 审中-公开
    具有耦合量子阱结构的发光器件

    公开(公告)号：US20110101301A1

    公开(公告)日：2011-05-05

    申请号：US12916218

    申请日：2010-10-29

    Applicant: You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    Inventor： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L33/32

    Abstract: A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device.

    Abstract translation: 一种在有源区域中具有耦合的量子阱结构的发光器件。 耦合的量子阱结构可以包括两个或更多个孔被一个或多个微型屏障隔开，并且阱和微型屏障一起夹在屏障之间。 耦合量子阱结构提供了与宽量子阱几乎相同的效果，这是由于通过微型屏障的波函数的耦合。 发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。

    HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH
    56.
    发明申请
    HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS FABRICATED BY GROWTH OVER A PATTERNED SUBSTRATE WITH MULTIPLE OVERGROWTH 失效
    水平发射，垂直发射，光束形状，分布式反馈（DFB）激光器通过具有多重扩展的图形基板生长

    公开(公告)号：US20100265979A1

    公开(公告)日：2010-10-21

    申请号：US12822888

    申请日：2010-06-24

    Applicant: Claude C.A. Weisbuch ,  Shuji Nakamura

    Inventor： Claude C.A. Weisbuch ,  Shuji Nakamura

    IPC: H01S5/20 ,  H01L21/20

    CPC classification number: H01S5/34333 ,  B82Y20/00 ,  G02B6/1225 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/105 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1231 ,  H01S5/18 ,  H01S5/187 ,  H01S5/20 ,  H01S5/2004 ,  H01S2304/12

    Abstract: A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

    Abstract translation: 使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，沉积在缓冲层顶部上的一个或多个第一图案化层，其中每个第一图案化层由底部侧向外延生长（ LEO）掩模层和LEO氮化物层填充底部LEO掩模层中的孔，形成在第一图案化层上的一个或多个有源层和沉积在有源层顶部上的一个或多个第二图案化层，其中第二个 图案化层由顶部LEO掩模层和顶部LEO掩模层中的LEO氮化物层填充孔组成，其中顶部和/或底部LEO掩模层用作反射镜，光限制层，光栅，波长选择元件，光束 用于有源层的成形元件或光束引导元件。

    Disk subsystem monitoring fault
    57.
    发明授权
    Disk subsystem monitoring fault 失效
    磁盘子系统监控故障

    公开(公告)号：US07702823B2

    公开(公告)日：2010-04-20

    申请号：US10980242

    申请日：2004-11-04

    Applicant: Mutsumi Hosoya ,  Akira Fujibayashi ,  Shuji Nakamura ,  Yasuo Inoue

    Inventor： Mutsumi Hosoya ,  Akira Fujibayashi ,  Shuji Nakamura ,  Yasuo Inoue

    IPC: G06F3/00

    CPC classification number: G06F11/0784 ,  G06F11/0727 ,  G06F11/076 ,  G06F11/079 ,  G06F11/0793 ,  G06F11/2053 ,  G06F11/2089

    Abstract: This invention enables a disk subsystem that employs the FC-AL connection to grasp the operation status of each disk drive, quickly locate a disk drive that has failed, and promptly carry out blocking processing. In a disk subsystem including plural drive enclosures which store disk drives, and a disk controller which controls transfer of data stored in the disk drives between the drive enclosures and a host computer. The drive enclosures each comprise a backend switch which is connected to the disk drives and to the disk controller, the backend switch comprises a status monitoring port through which operation status of switch ports of the backend switch is outputted, and the disk controller monitors a fault of the switch ports through the status monitoring port.

    Abstract translation: 本发明使得采用FC-AL连接的磁盘子系统能够掌握每个磁盘驱动器的操作状态，快速定位已经失败的磁盘驱动器，并且迅速进行阻塞处理。 在包括存储磁盘驱动器的多个驱动器机箱的磁盘子系统中，以及控制存储在驱动器机箱与主计算机之间的磁盘驱动器中的数据的传输的磁盘控制器。 驱动器机箱各自包括连接到磁盘驱动器和磁盘控制器的后端开关，后端开关包括状态监视端口，通过该状态监视端口输出后端开关的开关端口的操作状态，并且磁盘控制器监视故障 的交换机端口通过状态监控端口。

    Pendeo epitaxial structures and devices
    59.
    发明授权
    Pendeo epitaxial structures and devices 有权
    Pendeo外延结构和器件

    公开(公告)号：US07682944B2

    公开(公告)日：2010-03-23

    申请号：US11957154

    申请日：2007-12-14

    Applicant: George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    Inventor： George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    IPC: H01L21/20

    CPC classification number: H01L21/02639 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.

    Abstract translation: 一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。 这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。 桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。 可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

    GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY
    60.
    发明申请
    GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY 审中-公开
    通过液相蒸发相外观降低离散密度和自由放置的氮化铝膜的生长和制造

    公开(公告)号：US20100065854A1

    公开(公告)日：2010-03-18

    申请号：US12513326

    申请日：2007-11-02

    Applicant: Derrick S. Kamber ,  Shuji Nakamura ,  James S. Speck

    Inventor： Derrick S. Kamber ,  Shuji Nakamura ,  James S. Speck

    IPC: H01L29/20 ,  H01L21/20

    CPC classification number: C30B29/403 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

    Abstract: A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group III-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group III-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075° C., the Group III-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 107 cm−2.

    Abstract translation: 含有铝的III族氮化物半导体膜及其生长方法。 通过图案化衬底生长膜，并且在设计成在增加铝原子的迁移率以增加III族氮化物半导体膜的横向生长速率的温度下，在衬底上生长含有铝的III族氮化物半导体膜 。 该膜可选地包括用沟槽区域分开的高条纹图案化的衬底，其中条纹具有选择的高度，以允许III族氮化物半导体膜在从沟槽的底部到达条纹的顶部生长之前聚结， 温度大于1075℃，III族氮化物半导体膜使用氢化物​​气相外延生长，条纹沿着衬底或生长膜的（1-100）方向取向，并且位错密度 生长的薄膜小于107cm-2。

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