公开(公告)号：US20070259213A1

公开(公告)日：2007-11-08

申请号：US11741900

申请日：2007-04-30

Applicant: Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

Inventor： Susumu HASHIMOTO ,  Katsuhiko Koui ,  Masashi Sahashi ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  G11B5/3906 ,  H01L43/12 ,  Y10T428/1121

Abstract: A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

Abstract translation: 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。

公开(公告)号：US07130164B2

公开(公告)日：2006-10-31

申请号：US11061513

申请日：2005-02-22

Applicant: Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

Inventor： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US20060164764A1

公开(公告)日：2006-07-27

申请号：US11389175

申请日：2006-03-27

Applicant: Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

Inventor： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC: G11B5/127 ,  G11B5/33

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US07046489B2

公开(公告)日：2006-05-16

申请号：US11080485

申请日：2005-03-16

Applicant: Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

Inventor： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC: G11B5/33

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

公开(公告)号：US06937446B2

公开(公告)日：2005-08-30

申请号：US09981987

申请日：2001-10-19

Applicant: Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

Inventor： Yuuzo Kamiguchi ,  Hiromi Yuasa ,  Tomohiko Nagata ,  Hiroaki Yoda ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masayuki Takagishi

IPC: G11B5/31 ,  G11B5/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3143 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  Y10T428/1114

Abstract: There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Abstract translation: 提供了一种具有适当的电阻值的实用磁阻效应元件，其可以被敏化并且具有少量的要控制的磁性层，以及使用该电阻的磁头和磁记录和/或再现系统。 在使感应电流沿与膜的平面垂直的方向流动的磁阻效应元件中，电阻调节层设置在被钉扎层，自由层和非磁性中间层中的至少一个中。 电阻调节层含有氧化物，氮化物，氟化物，碳化物或硼化物作为主要成分。 电阻调节层可以是连续的膜或者可以具有针孔。 因此，可以提供具有适当的电阻值的实用的磁阻效应元件，其可以被敏化并且具有少量的磁性层，同时有效地利用依赖于自旋的散射效应。

公开(公告)号：US20050052787A1

公开(公告)日：2005-03-10

申请号：US10936715

申请日：2004-09-09

Applicant: Tomomi Funayama ,  Masayuki Takagishi ,  Katsuhiko Koui ,  Kohichi Tateyama

Inventor： Tomomi Funayama ,  Masayuki Takagishi ,  Katsuhiko Koui ,  Kohichi Tateyama

IPC: G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3263 ,  H01L43/08

Abstract: A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.

Abstract translation: 使用电流垂直于平面（CPP）系统的双自旋阀类型的磁阻效应元件，其中感测电流垂直于多个导电层的堆叠面流动，磁阻效应元件包括第一单元 其包括自由层和第一钉扎层，第二单元，其包括与第一单元共享的自由层和第二钉扎层，第一电流控制层，设置在第一单元中并限制感测的流量 电流和第二电流控制层，其设置在第二单元中并限制感测电流的流量。

公开(公告)号：US06495275B2

公开(公告)日：2002-12-17

申请号：US09927379

申请日：2001-08-13

Applicant: Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

Inventor： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

IPC: G11B5127

CPC classification number: H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/26 ,  Y10T428/265

Abstract: A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.

Abstract translation: 磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。 另外，金属阻挡层设置成与第一磁性层相邻。 位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。

公开(公告)号：US06303218B1

公开(公告)日：2001-10-16

申请号：US09273496

申请日：1999-03-22

Applicant: Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

Inventor： Yuzo Kamiguchi ,  Akiko Saito ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki ,  Hiroaki Yoda ,  Masashi Sahashi

IPC: G11B566

CPC classification number: H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3259 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/26 ,  Y10T428/265

Abstract: According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.

Abstract translation: 根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于 提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。 根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层 还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。

公开(公告)号：US08730616B2

公开(公告)日：2014-05-20

申请号：US13585285

申请日：2012-08-14

Applicant: Kenichiro Yamada ,  Yusuke Tomoda ,  Tomoko Taguchi ,  Katsuhiko Koui

Inventor： Kenichiro Yamada ,  Yusuke Tomoda ,  Tomoko Taguchi ,  Katsuhiko Koui

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/23 ,  G11B5/3146 ,  G11B5/3163 ,  G11B2005/0024

Abstract: According to one embodiment, a magnetic recording head includes a main pole, a trailing shield opposing the main pole with a write gap therebetween, and a high-frequency oscillator between a distal end portion of the main pole and the trailing shield configured to produce a high-frequency magnetic field. The high-frequency oscillator includes a lower end surface facing the recording medium and an upper end surface substantially parallel to the lower end surface. The width of the lower end surface in a track-width direction is smaller than that of the upper end surface.

Abstract translation: 根据一个实施例，磁记录头包括主极，与主极相对的后屏蔽件，其间具有写入间隙，以及在主极的远端部分和后屏蔽件之间的高频振荡器，其被配置为产生 高频磁场。 高频振荡器包括面向记录介质的下端表面和基本上平行于下端表面的上端表面。 下端面在轨道宽度方向上的宽度小于上端面的宽度。

公开(公告)号：US08467148B2

公开(公告)日：2013-06-18

申请号：US12588176

申请日：2009-10-06

Applicant: Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

Inventor： Hitoshi Iwasaki ,  Soichi Oikawa ,  Katsuhiko Koui ,  Kenichiro Yamada

IPC: G11B5/127

CPC classification number: G11B5/3146 ,  G11B5/314 ,  G11B2005/0005 ,  G11B2005/0024 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H03B15/006

Abstract: A spin torque oscillator includes an amorphous soft magnetic layer, a nonmagnetic layer and a hard magnetic layer. The nonmagnetic layer with a close-packed crystal structure is provided on the amorphous soft magnetic layer. The hard magnetic layer with a close-packed crystal structure and perpendicular magnetic anisotropy is provided on the nonmagnetic layer.

Abstract translation: 自旋转矩振荡器包括非晶软磁层，非磁性层和硬磁层。 在非晶软磁层上提供具有紧密结晶结构的非磁性层。 在非磁性层上提供具有紧密堆积晶体结构和垂直磁各向异性的硬磁性层。