公开(公告)号：US20100155721A1

公开(公告)日：2010-06-24

申请号：US12645433

申请日：2009-12-22

Applicant: Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

Inventor： Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225

Abstract: A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）阵列基板。 薄膜晶体管（TFT）阵列基板包括绝缘基板，形成在绝缘基板上并包括添加元件的氧化物半导体层，与氧化物半导体层重叠的栅极电极以及介于氧化物半导体层和 所述栅电极，其中所述添加元素的氧键能量大于所述氧化物半导体层的基体元素的氧键能。

公开(公告)号：US20100149476A1

公开(公告)日：2010-06-17

申请号：US12534300

申请日：2009-08-03

Applicant: Do-Hyun KIM ,  Jong-Hyun CHOUNG ,  Young-Joo CHOI ,  Hong-Sick PARK ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Pil-Sang YUN ,  Je-Hyeong PARK ,  Chang-Oh JEONG ,  Je-Hun LEE ,  Sun-Young HONG ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Nam-Seok SUH

Inventor： Do-Hyun KIM ,  Jong-Hyun CHOUNG ,  Young-Joo CHOI ,  Hong-Sick PARK ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Pil-Sang YUN ,  Je-Hyeong PARK ,  Chang-Oh JEONG ,  Je-Hun LEE ,  Sun-Young HONG ,  Bong-Kyun KIM ,  Byeong-Jin LEE ,  Nam-Seok SUH

IPC: G02F1/1333 ,  B05D5/12 ,  B44C1/22

CPC classification number: G02F1/136286 ,  G02F2001/133302 ,  G02F2001/136295

Abstract: A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate.

Abstract translation: 显示基板包括： 基底基板，设置在基底基板的下表面的变形防止层，其中变形防止层向基底基板施加力以防止基底基板弯曲，设置在基底基板的上表面上的栅极线 设置在基底基板上的数据线，以及配置在基底基板上的像素电极。

公开(公告)号：US20100065841A1

公开(公告)日：2010-03-18

申请号：US12555824

申请日：2009-09-09

Applicant: Je-Hun LEE ,  Ki-Won KIM ,  Do-Hyun KIM ,  Woo-Geun LEE ,  Kap-Soo YOON

Inventor： Je-Hun LEE ,  Ki-Won KIM ,  Do-Hyun KIM ,  Woo-Geun LEE ,  Kap-Soo YOON

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L27/1225 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract translation: TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在 半导体氧化物层和栅电极。 栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

公开(公告)号：US07670831B2

公开(公告)日：2010-03-02

申请号：US10860544

申请日：2004-06-03

Applicant: Sang Yup Lee ,  Hee Tae Jung ,  Dae Hwan Jung ,  Young Koan Ko ,  Do Hyun Kim ,  Seok Jae Lee ,  Byung Hun Kim ,  Jae Shin Lee

Inventor： Sang Yup Lee ,  Hee Tae Jung ,  Dae Hwan Jung ,  Young Koan Ko ,  Do Hyun Kim ,  Seok Jae Lee ,  Byung Hun Kim ,  Jae Shin Lee

IPC: C12M1/00 ,  C12Q1/00 ,  C12Q1/68 ,  C12M1/34

CPC classification number: G01N33/5438 ,  B82Y30/00 ,  C12Q1/001 ,  G01N33/551 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/746 ,  Y10S977/747 ,  Y10S977/748 ,  Y10T156/10

Abstract: Conductive carbon nanotubes (CNTs) obtained by dotting carboxylated CNTs with metal nanocrystals by chemical functional groups, are described, as well as a method for fabricating a pattern or film of the conductive CNTs which involves repeatedly depositing conductive CNTs on a substrate to achieve high surface density. A biosensor is described, in which bioreceptors that bind to target biomolecules are selectively attached to conductive CNTs or a conductive CNT pattern or film. By use of the conductive biosensor, various target biomaterials that bind or react with the bioreceptors can be precisely measured directly or by electrochemical signals at large amounts in one step. Additionally, the biosensor can be used for an electrical detection method capable of providing precise measurement results even with a small amount of source material.

Abstract translation: 描述了通过化学官能团将金属纳米晶体的羧化CNT点缀的导电碳纳米管（CNT），以及用于制造导电CNT的图案或膜的方法，其包括在基板上反复沉积导电CNT以实现高表面 密度。 描述了生物传感器，其中结合靶生物分子的生物感受器选择性地连接到导电CNT或导电CNT图案或膜。 通过使用导电生物传感器，可以在一个步骤中直接或通过大量的电化学信号精确测量与生物感受器结合或反应的各种靶生物材料。 此外，生物传感器可以用于即使使用少量源材料也能够提供精确测量结果的电检测方法。

公开(公告)号：US20090140239A1

公开(公告)日：2009-06-04

申请号：US12275030

申请日：2008-11-20

Applicant: Hyo Young Lee ,  Do Hyun Kim ,  Hyun Jung Do

Inventor： Hyo Young Lee ,  Do Hyun Kim ,  Hyun Jung Do

IPC: H01L51/00 ,  C07D251/24

CPC classification number: H01L51/0035 ,  C07D251/24 ,  H01L51/0067 ,  H01L51/5048 ,  H01L51/5092

Abstract: A compound for organic semiconductor devices having a triazine group, an organic semiconductor thin film and an organic semiconductor device comprising the same, and methods of preparing them are provided. The compound for organic semiconductor devices is represented by the following Formula: where each of R1, R2 and R3 is a perfluorophenylene derivative.

Abstract translation: 提供了具有三嗪基团的有机半导体器件的化合物，有机半导体薄膜和包含它们的有机半导体器件及其制备方法。 用于有机半导体器件的化合物由下式表示：其中R1，R2和R3各自为全氟亚苯基衍生物。

公开(公告)号：US07419848B2

公开(公告)日：2008-09-02

申请号：US11177176

申请日：2005-07-08

Applicant: Hyoyoung Lee ,  Hyeon-jeong Do ,  Do Hyun Kim ,  Taehyoung Zyung ,  Kun Jun

Inventor： Hyoyoung Lee ,  Hyeon-jeong Do ,  Do Hyun Kim ,  Taehyoung Zyung ,  Kun Jun

IPC: H01L29/08 ,  H01L51/40 ,  C07D311/82 ,  C07D311/90

CPC classification number: H01L51/0071 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0065 ,  H01L51/0595 ,  H01L51/4206

Abstract: Provided are compounds having a thiol group as an anchoring group introduced into a Rose Bengal molecule, a method of producing the compound, an electronic device comprising the compound immobilized on an electrode by a self-assembling method, and a method of manufacturing the electronic device. The compound has the following formula: wherein R is an unsaturated or saturated C2-C20 hydrocarbon group. The compound can provide switch/memory properties and form a single molecular layer by self-assembling when manufacturing a molecular electronic device.

Abstract translation: 提供了引入玫瑰红分子中具有硫醇基作为锚定基团的化合物，制备该化合物的方法，包含通过自组装方法固定在电极上的化合物的电子器件，以及制造电子器件的方法 。 化合物具有下式：其中R是不饱和或饱和的C 2 -C 20烃基。 该化合物可以提供开关/记忆性质，并在制造分子电子器件时通过自组装形成单一分子层。

公开(公告)号：US20080203390A1

公开(公告)日：2008-08-28

申请号：US11932233

申请日：2007-10-31

Applicant: Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

Inventor： Do-Hyun Kim ,  Won-Suk Shin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Eun-Guk Lee ,  Je-Hun Lee

IPC: H01L29/49 ,  H01L21/44 ,  H01L21/84

CPC classification number: H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upper and lower layers, and forming a pixel electrode connected to the drain electrode.

Abstract translation: 一种制造薄膜晶体管阵列面板的方法，包括在基板上形成栅极线; 在栅极线上顺序地形成栅极绝缘层，硅层和包括下层和上层的导体层，在导体层上形成光致抗蚀剂膜，图案化光致抗蚀剂膜以形成包括第一 部分和第二部分具有比第一部分更大的厚度，通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻上层和下层，通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻硅层以形成半导体， 通过使用回蚀工艺去除光致抗蚀剂图案的第二部分，通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地湿法蚀刻导体层的上层，通过使用光致抗蚀剂干蚀刻导体层的下层 图案作为蚀刻掩模以形成包括剩余的上层和下层的数据线和漏极，并且形成连接到漏电极的像素电极 。

公开(公告)号：US20080099765A1

公开(公告)日：2008-05-01

申请号：US11923914

申请日：2007-10-25

Applicant: Do-Hyun KIM ,  Je-Hun LEE ,  Chang-Oh JEONG

Inventor： Do-Hyun KIM ,  Je-Hun LEE ,  Chang-Oh JEONG

IPC: H01L29/04 ,  H01L21/336

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L29/458

Abstract: A thin film transistor substrate and fabricating method thereof, the thin film transistor substrate including a substrate, a gate line and a gate electrode, each including a metal adhesion layer and a Cu alloy layer disposed on the substrate, an active layer and an ohmic contact layer disposed over the gate electrode, a gate insulating layer disposed between the gate electrode and the active and ohmic contact layers, source and drain electrodes disposed on the ohmic contact layer, and a data line connected to the source electrode.

Abstract translation: 一种薄膜晶体管基板及其制造方法，所述薄膜晶体管基板包括基板，栅极线和栅电极，每个薄膜晶体管基板包括设置在基板上的金属粘合层和Cu合金层，有源层和欧姆接触 设置在栅极电极上的栅极绝缘层，设置在栅电极与有源欧姆接触层之间的栅极绝缘层，设置在欧姆接触层上的源电极和漏电极以及连接到源电极的数据线。

公开(公告)号：US20080017862A1

公开(公告)日：2008-01-24

申请号：US11779534

申请日：2007-07-18

Applicant: Je-Hun LEE ,  Do-Hyun KIM ,  Eun-Guk LEE ,  Chang-Oh JEONG

Inventor： Je-Hun LEE ,  Do-Hyun KIM ,  Eun-Guk LEE ,  Chang-Oh JEONG

IPC: H01L29/04 ,  H01L21/00

CPC classification number: G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124

Abstract: An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole.

Abstract translation: 阵列基板包括开关元件，信号传输线，钝化层和像素电极。 开关元件设置在绝缘基板上。 信号传输线连接到开关元件，并且包括阻挡层，导电线和氮化铜层。 阻挡层设置在绝缘基板上。 导电线设置在阻挡层上并且包括铜或铜合金。 氮化铜层覆盖导电线。 钝化层覆盖开关元件和信号传输线，并且具有接触孔，开关元件的漏电极通过该接触孔部分露出。 像素电极设置在绝缘基板上，并通过接触孔与开关元件的漏电极连接。

公开(公告)号：US06892446B2

公开(公告)日：2005-05-17

申请号：US09987752

申请日：2001-11-15

Applicant: Ji Hyun Hwang ,  Do Hyun Kim

Inventor： Ji Hyun Hwang ,  Do Hyun Kim

IPC: B23P19/00 ,  H05K13/00 ,  H05K13/02 ,  H05K13/04 ,  H05K3/30

CPC classification number: H05K13/0061 ,  Y10T29/4913 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T29/53191

Abstract: The surface mounting method includes: transferring the PCB to one conveyer among multiple conveyers capable of moving from a first transfer; transferring the PCB to another conveyer; transferring the PCB to one conveyer, while electronic parts from a parts feeder are mounted onto the transferred PCB; mounting the electronic parts from the parts feeder again onto the transferred PCB, while the PCB onto which the parts have been mounted is transferred to the second transfer; and transferring the PCB onto which the parts have been mounted again to the second transfer, while a new PCB is transferred to one conveyer of the conveyers from the first transfer.

Abstract translation: 表面安装方法包括：将PCB传送到能够从第一次传送移动的多个输送机中的一个输送机; 将PCB转移到另一个输送机; 将PCB转移到一个输送机，而来自零件进料器的电子零件安装在转印的PCB上; 将电子部件从零件供给器再次安装到转印的PCB上，同时将已安装零件的PCB转移到第二次转印; 并且再次将已经安装有部件的PCB转移到第二次传送，同时新的PCB从第一次传送转移到输送机的一个输送机。