Binder support apparatus
    52.
    发明授权
    Binder support apparatus 有权
    粘合剂支撑装置

    公开(公告)号:US09057476B2

    公开(公告)日:2015-06-16

    申请号:US13870639

    申请日:2013-04-25

    IPC分类号: B42F13/00 F16M13/00

    摘要: Binder support apparatus may be configured to support binder covers apart from one another. The binder support apparatus may include two or more portions configured to be coupled to opposing binder covers. At least one portion of the binder support apparatus may be configured into locked and unlocked positions.

    摘要翻译: 粘合剂支撑装置可以被配置为支撑彼此分离的粘合剂盖。 活页夹支撑装置可以包括两个或更多个部分,其被配置为联接到相对的装订盖。 粘合剂支撑装置的至少一部分可被配置成锁定和解锁位置。

    Magnetic memory with separate read and write paths
    55.
    发明授权
    Magnetic memory with separate read and write paths 有权
    具有独立读写路径的磁记忆体

    公开(公告)号:US08681541B2

    公开(公告)日:2014-03-25

    申请号:US13966361

    申请日:2013-08-14

    IPC分类号: G11C11/14

    摘要: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

    摘要翻译: 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部,具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条,所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部,并且读取线电耦合到磁性隧道结。

    STRAM with composite free magnetic element
    56.
    发明授权
    STRAM with composite free magnetic element 失效
    STRAM与复合自由磁性元件

    公开(公告)号:US08681539B2

    公开(公告)日:2014-03-25

    申请号:US13862611

    申请日:2013-04-15

    IPC分类号: G11C11/00

    摘要: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

    摘要翻译: 自旋转矩存储器包括复合自由磁性元件,具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

    Magnetic stack having assist layers
    58.
    发明授权
    Magnetic stack having assist layers 有权
    具有辅助层的磁性堆叠

    公开(公告)号:US08670271B2

    公开(公告)日:2014-03-11

    申请号:US13857410

    申请日:2013-04-05

    IPC分类号: G11C11/15

    摘要: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

    摘要翻译: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结,每个具有面外磁各向异性和面外磁化取向,所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层,辅助层具有小于700Oe的低磁各向异性,并定位成在自由层上施加磁场。

    Tree platform and support
    59.
    发明授权
    Tree platform and support 有权
    树平台和支持

    公开(公告)号:US08657071B2

    公开(公告)日:2014-02-25

    申请号:US13010236

    申请日:2011-01-20

    IPC分类号: A01M31/02

    摘要: A support assembly for a tree-based platform includes a rod having a length greater than a diameter of a tree to which the platform is intended to be attached. The assembly further includes a first ring defining an opening configured to receive a portion of a tree, and a first plurality of extending members inwardly advanceable relative to the first ring. Each of the extending members has an end portion configured to engage the tree in the opening of the first ring when sufficiently advanced. The assembly further includes a second ring defining an opening configured to receive a portion of the tree, and a second plurality of extending members inwardly advanceable relative to the second ring. Each extending member has an end portion configured to engage the tree in the opening of the second ring when sufficiently advanced. The assembly further includes first and second supports. Each support has a bottom rail, a top rail, and two side rails. The top rails of the first and second support are configured to be coupled to the second ring, and the bottom rails of the first and second supports are configured to be coupled to the first ring. The assembly further includes a first tension element configured to couple to the rod and the bottom rail of the first support, and a second tension element configured to couple to the rod and the bottom rail of the second support.

    摘要翻译: 用于基于树的平台的支撑组件包括具有大于所述平台所要附接的树的直径的长度的杆。 组件还包括限定了一个开口的第一环,该开口被构造成容纳树的一部分,以及相对于第一环向内可推进的第一多个延伸构件。 每个延伸构件具有端部,该端部构造成当足够高度地接合在第一环的开口中的树。 组件还包括限定被配置为接收树的一部分的开口的第二环,以及相对于第二环向内可向前移动的第二多个延伸构件。 每个延伸构件具有端部,该端部构造成当足够前进时接合在第二环的开口中的树。 组件还包括第一和第二支撑件。 每个支撑具有底轨,顶轨和两个侧轨。 第一和第二支撑件的顶部轨道被配置为联接到第二环,并且第一和第二支撑件的底部轨道被配置为联接到第一环。 组件还包括构造成联接到第一支撑件的杆和底轨的第一张力元件和被配置为联接到第二支撑件的杆和底轨的第二张力元件。

    Single line MRAM
    60.
    发明授权
    Single line MRAM 失效
    单线MRAM

    公开(公告)号:US08519495B2

    公开(公告)日:2013-08-27

    申请号:US12372025

    申请日:2009-02-17

    IPC分类号: H01L29/82

    摘要: A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.

    摘要翻译: 磁存储器件包括通过磁性隧道结从第二电极分离的第一电极。 第一电极沿着第一电极的长度提供写入电流路径。 磁性隧道结包括具有可在高电阻状态磁化取向和低电阻状态磁化取向之间切换的磁化取向的自由磁性层。 自由磁性层与第一电极间隔小于10纳米的距离。 沿着写入电流路径的电流产生磁场。 磁场在高电阻状态磁化取向和低电阻状态磁化取向之间切换自由磁层磁化取向。