公开(公告)号：US20180090397A1

公开(公告)日：2018-03-29

申请号：US15389766

申请日：2016-12-23

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Masanori NAKAYAMA ,  Tadashi TERASAKI

IPC分类号： H01L21/66

CPC分类号： H01L22/26

摘要： A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an evaluation factor corresponding to the first process setting and the apparatus data; determining one or more recipe items executable in the processing apparatus based on the first evaluation data; and notifying the one or more recipe items.

公开(公告)号：US20180087152A1

公开(公告)日：2018-03-29

申请号：US15692187

申请日：2017-08-31

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Hidenari YOSHIDA

IPC分类号： C23C16/455 ,  H01L21/205 ,  H01L21/31

CPC分类号： C23C16/455 ,  C23C16/402 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/4584 ,  H01L21/205 ,  H01L21/31

摘要： Provided is a processing container formed of a reaction tube and a manifold that supports the reaction tube from below, and adapted to process a substrate inside, a nozzle adapted to supply a processing gas to the substrate, and a connecting portion adapted to erect the nozzle inside the processing container. The connecting portion includes (1) a fixing portion formed of a cylindrical portion inserted into an introduction portion provided at the manifold, and a flange plate formed at an end portion of the cylindrical portion, and (2) a detachable portion formed of an elbow engaged with the flange plate, and an installation portion in which the nozzle is installed.

公开(公告)号：US20180078997A1

公开(公告)日：2018-03-22

申请号：US15556307

申请日：2016-02-22

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Satoru UJIIE ,  Takahiro DAIKOKU

IPC分类号： B22D19/00 ,  H05K7/20 ,  F28F9/013

CPC分类号： B22D19/0072 ,  F28D1/0383 ,  F28D1/0475 ,  F28D1/0476 ,  F28D2021/0029 ,  F28F1/006 ,  F28F1/16 ,  F28F3/12 ,  F28F9/0131 ,  F28F9/0258 ,  F28F13/08 ,  F28F2240/00 ,  F28F2255/146 ,  H01L21/4871 ,  H01L23/473 ,  H05K7/20254

摘要： In a method of manufacturing a liquid-cooling cold plate, cast molding is performed after embedding a metal pipe for supplying a cooling liquid inside a casting mold. Fixing brackets to be attached to the metal pipe is provided to maintain a positional relationship between a plurality of portions of the metal pipe embedded in the casting mold. The casting molding is performed by pouring molten metal into the casting mold while the fixing metal parts are attached to the metal pipe.

公开(公告)号：USD813065S1

公开(公告)日：2018-03-20

申请号：US29573626

申请日：2016-08-08

申请人： Hitachi Kokusai Electric Inc. ,  Horiba, Ltd.

设计人： Hideto Tateno ,  Akinori Tanaka ,  Kimihiko Arimoto

公开(公告)号：US20180057936A1

公开(公告)日：2018-03-01

申请号：US15695423

申请日：2017-09-05

申请人： HITACHI KOKUSAI ELECTRIC INC. ,  CENTRAL GLASS CO., LTD.

发明人： Kenji KAMEDA ,  Masaya NAGATO ,  Akiou KIKUCHI ,  Yuta TAKEDA ,  Kunihiro YAMAUCHI

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/52

CPC分类号： C23C16/4405 ,  C23C16/40 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/52

摘要： There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.

公开(公告)号：US20180040520A1

公开(公告)日：2018-02-08

申请号：US15789311

申请日：2017-10-20

申请人： HITACHI KOKUSAI ELECTRIC, INC.

发明人： Hideto YAMAGUCHI ,  Tetsuya KOSUGI ,  Masaaki UENO

IPC分类号： H01L21/66 ,  H01L21/67 ,  G01K7/02

CPC分类号： H01L22/26 ,  G01K7/02 ,  H01L21/67109 ,  H01L21/67248 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

公开(公告)号：US20180040488A1

公开(公告)日：2018-02-08

申请号：US15667106

申请日：2017-08-02

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Toshiki FUJINO ,  Atsushi UMEKAWA ,  Takayuki NAKADA

IPC分类号： H01L21/67 ,  H01L21/677

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/67196 ,  H01L21/67757

摘要： A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

公开(公告)号：US20180040475A1

公开(公告)日：2018-02-08

申请号：US15665698

申请日：2017-08-01

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takahiro MIYAKURA ,  Atsushi MORIYA ,  Naoharu NAKAISO ,  Kensuke HAGA

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/455

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/52 ,  C23C16/56 ,  C30B25/005 ,  C30B25/02 ,  C30B25/06 ,  H01L21/02126 ,  H01L21/02233 ,  H01L21/02636 ,  H01L21/32055 ,  H01L29/66636

摘要： There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

公开(公告)号：US20180033645A1

公开(公告)日：2018-02-01

申请号：US15659967

申请日：2017-07-26

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Shuhei SAIDO ,  Mika URUSHIHARA ,  Yusaku OKAJIMA

IPC分类号： H01L21/443 ,  H01L21/67 ,  H01L21/677 ,  H01L21/8238

摘要： A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.

公开(公告)号：US09871542B2

公开(公告)日：2018-01-16

申请号：US15254974

申请日：2016-09-01

申请人： Hitachi Kokusai Electric Inc.

发明人： Yoichi Kushioka ,  Koji Yotsumoto ,  Mitsuhiro Takashima

IPC分类号： H04B1/10 ,  H04B7/005 ,  H04B1/16

CPC分类号： H04B1/1036 ,  H04B1/1081 ,  H04B1/16 ,  H04B7/005

摘要： A noise canceller device for removing interference signals from other systems and improving communication quality of a desired signal is provided. The noise canceller device comprises a first calculation unit performing cross-correlation processing on interference signals received by sub-antennas, a first peak detection unit detecting peaks of the interference signals, a first information acquisition unit acquiring first interference signal information, a composition unit composing the interference signals, a second calculation unit performing correlation processing between a signal received by a main antenna and the composed interference signal, a second peak detection unit detecting a peak of the composed interference signal, a second information acquisition unit acquiring second interference signal information, an interference signal replica generation unit generating an interference signal replica, and a removal unit subtracting the interference signal replica from the received signal by the main-antenna.