公开(公告)号：US11063568B2

公开(公告)日：2021-07-13

申请号：US16192842

申请日：2018-11-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shungo Morinaga

IPC: H03H3/04 ,  H03H3/007 ,  H03H9/24 ,  H03H9/10 ,  H03H9/21 ,  H03H3/02 ,  H03H9/15

Abstract: A method for adjusting a resonant frequency of a resonator without impairing piezoelectricity that includes preparing a lower lid; arranging a substrate with a lower surface that faces the lower lid and forming a first electrode layer, a piezoelectric film, and a second electrode layer on an upper surface of the substrate. Moreover, a vibration arm is formed that bends and vibrates from the first electrode layer, the second electrode layer, and the piezoelectric film and an upper lid faces the lower lid with the resonator interposed therebetween. The method further includes adjusting a frequency of the resonator before or after arranging the upper lid by exciting the vibration arm by applying a voltage between the first electrode layer and the second electrode layer and by causing a part of the vibration arm to collide with either or both of the lower lid and the upper lid.

公开(公告)号：US11031539B2

公开(公告)日：2021-06-08

申请号：US15773157

申请日：2016-11-04

Applicant: PIEZO STUDIO INC. ,  TOHOKU UNIVERSITY

Inventor： Akira Yoshikawa ,  Yuji Ohashi ,  Yuui Yokota ,  Kei Kamada ,  Masatoshi Ito ,  Kenji Inoue ,  Hiroyuki Amano

IPC: H01L41/187 ,  H01L41/113 ,  H01L41/053 ,  H03H3/04 ,  H03H9/02 ,  H01L41/047 ,  H01L41/09

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0

公开(公告)号：US11025222B2

公开(公告)日：2021-06-01

申请号：US16253712

申请日：2019-01-22

Applicant: Seiko Epson Corporation

Inventor： Seiichiro Ogura ,  Keiichi Yamaguchi ,  Masahiro Oshio ,  Takashi Yamazaki

IPC: G01C19/5607 ,  G01C19/5621 ,  H03H9/21 ,  H03H3/02 ,  H03H9/05 ,  H03H3/04 ,  H03H9/10

Abstract: A vibration element includes a base and a vibrating arm extending from the base. The vibrating arm includes an arm positioned between the base and a weight. A weight film is disposed on the weight. The weight has a first principal surface and a second principal surface in a front and back relationship with respect to a center plane of the arm. A center of gravity of the weight is located between the first principal surface and the center plane of the arm. A center of gravity of the weight film is located between the second principal surface and the center plane of the arm.

公开(公告)号：US11018645B2

公开(公告)日：2021-05-25

申请号：US16794906

申请日：2020-02-19

Applicant: SEIKO EPSON CORPORATION

Inventor： Jun Uehara

IPC: G01N27/00 ,  G08B19/00 ,  G08B21/00 ,  G01J5/00 ,  G01K7/00 ,  G05D23/20 ,  G08B13/18 ,  G08B27/00 ,  H03H3/04 ,  H03B5/04 ,  H03H9/64 ,  G05D23/19 ,  H03B5/12

Abstract: Provided is an oscillator including: a resonator; a first circuit device electrically coupled to the resonator; and a second circuit device. The first circuit device generates a first clock signal by causing the resonator to oscillate, and performs first temperature compensation processing for temperature compensating a frequency of the first clock signal. The second circuit device receives the first clock signal from the first circuit device, generates a second clock signal based on the first clock signal, and performs second temperature compensation processing for temperature compensating a frequency of the second clock signal.

公开(公告)号：US11005447B2

公开(公告)日：2021-05-11

申请号：US16346099

申请日：2016-12-22

Applicant: Intel Corporation

Inventor： Paul B. Fischer ,  Marko Radosavljevic ,  Sansaptak Dasgupta ,  Han Wui Then

IPC: H03H9/17 ,  H03H3/04 ,  H03H3/02

Abstract: Embodiments of the invention include microelectronic devices, resonators, and methods of fabricating the microelectronic devices. In one embodiment, a microelectronic device includes a substrate and a plurality of cavities integrated with the substrate. A plurality of vertically oriented resonators are formed with each resonator being positioned in a cavity. Each resonator includes a crystalline or single crystal piezoelectric film.

公开(公告)号：US20210126621A1

公开(公告)日：2021-04-29

申请号：US17133389

申请日：2020-12-23

Applicant: Resonant Inc.

Inventor： Viktor Plesski ,  Bryant Garcia ,  Julius Koskela ,  Patrick Turner

IPC: H03H9/54 ,  H03H9/13 ,  H03H3/04 ,  H03H9/02

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers comprise a first layer adjacent the diaphragm and a second layer over the first layer opposite the diaphragm, the second layer having a greater width than the first layer.

公开(公告)号：US10985728B2

公开(公告)日：2021-04-20

申请号：US17030050

申请日：2020-09-23

Applicant: Resonant Inc.

Inventor： Viktor Plesski ,  Jesson John ,  Bryant Garcia

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/04 ,  H03H9/13 ,  H03H9/56 ,  H03H3/02

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. Zero or more dielectric layers are deposited over all of the IDTs and the diaphragms, wherein a total thickness of the zero or more dielectric layers is the same for all of the plurality of acoustic resonators.

公开(公告)号：US20210079515A1

公开(公告)日：2021-03-18

申请号：US16569939

申请日：2019-09-13

Applicant: QORVO US, INC.

Inventor： Derya Deniz ,  Matthew Wasilik ,  Robert Kraft ,  John Belsick

IPC: C23C14/34 ,  C23C14/00 ,  H03H9/02 ,  H03H3/04 ,  H01L41/047

Abstract: A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

公开(公告)号：US10931251B2

公开(公告)日：2021-02-23

申请号：US16275655

申请日：2019-02-14

Applicant: Akoustis, Inc.

Inventor： Ramakrishna Vetury ,  Alexander Y. Feldman ,  Michael D. Hodge ,  Art Geiss ,  Shawn R. Gibb ,  Mark D. Boomgarden ,  Michael P. Lewis ,  Pinal Patel ,  Jeffrey B. Shealy

IPC: H01H3/02 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/56 ,  H03H3/04 ,  H03H9/17

Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

公开(公告)号：US10924081B2

公开(公告)日：2021-02-16

申请号：US16829604

申请日：2020-03-25

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L41/312 ,  H01L41/047 ,  H01L27/20 ,  H01L41/335

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.