公开(公告)号：US08193598B2

公开(公告)日：2012-06-05

申请号：US12264560

申请日：2008-11-04

Applicant: Mary M. Eshaghian-Wilner ,  Alexander Khitun ,  Kang L. Wang

Inventor： Mary M. Eshaghian-Wilner ,  Alexander Khitun ,  Kang L. Wang

IPC: H01L45/02

CPC classification number: G11C11/54 ,  B82Y10/00 ,  G11C11/14 ,  H01L29/66984 ,  H03K19/168 ,  Y10S977/933

Abstract: Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.

Abstract translation: 提供了使用自旋波作为器件互连的物理机制的纳米级和多尺度计算架构。 描述了使用包括多个输入和多个输出的纳米尺度和多尺度计算体系结构的固态自旋波计算设备，其中这样的设备被配置为通过使用旋转从输入到输出同时发送数据元素 不同频率的波。 这些装置包括但不限于自旋波交叉开关，自旋波可重构网格，自旋波全互连簇，分层多尺度自旋波横截面，分级多尺度自旋波可重构网格 以及分层多尺度自旋波全互联集群。

公开(公告)号：US08130531B2

公开(公告)日：2012-03-06

申请号：US12690093

申请日：2010-01-19

Applicant: Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

Inventor： Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract translation: 磁存储器结构包括具有连续磁畴的存储器轨道。 每个磁畴具有一位的存储容量。 第一域壁注入层与存储器轨道的端子相交并连接，并且不断地存储第一二进制数据。 针对第一畴壁注入层的第二畴壁注入层与存储轨道的端子相交并连接，并且不断地存储与第一二进制数据不同的第二二进制数据。 存储器轨道和第一域壁注入层和第二域壁注入层中的一个一起形成畴壁。

公开(公告)号：US08125814B2

公开(公告)日：2012-02-28

申请号：US12390513

申请日：2009-02-23

Applicant: Ching-Hsiang Tsai

Inventor： Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C19/0816 ,  G11C19/0825

Abstract: A magnetic memory, a driving method thereof, and a manufacturing method thereof are provided. The magnetic memory includes a plurality of lead structures, a plurality of first magnetic metal structures, a second magnetic metal structure, and an insulation layer. Each of the first magnetic metal structures is disposed between adjacent two of the lead structures, and the second magnetic metal structure spans over the lead structures. A structure composed of the first magnetic metal structures and the second magnetic metal structure includes a plurality of magnetic memory cells connected with each other. Each of the magnetic memory cells has a magnetic domain and a domain wall adjacent to the magnetic domain, wherein the magnetic domain is suitable for storing a bit data.

Abstract translation: 提供了一种磁存储器及其驱动方法及其制造方法。 磁存储器包括多个引线结构，多个第一磁性金属结构，第二磁性金属结构和绝缘层。 每个第一磁性金属结构设置在相邻的两个引线结构之间，并且第二磁性金属结构跨越引线结构。 由第一磁性金属结构和第二磁性金属结构构成的结构包括彼此连接的多个磁性存储单元。 每个磁存储单元具有与磁畴相邻的磁畴和畴壁，其中磁畴适于存储位数据。

公开(公告)号：US08018765B2

公开(公告)日：2011-09-13

申请号：US12553670

申请日：2009-09-03

Applicant: Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

Inventor： Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

IPC: G11C11/15 ,  G11C11/14

CPC classification number: G11C11/14 ,  G11C5/02 ,  G11C19/0808

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

Abstract translation: 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

公开(公告)号：US08004374B2

公开(公告)日：2011-08-23

申请号：US11845239

申请日：2007-08-27

Applicant: Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

Inventor： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC: H03H7/01 ,  H01P1/20

CPC classification number: G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49075

Abstract: A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.

Abstract translation: 一种微波带阻滤波器，其具有在电介质材料上形成的磁条。 磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。 磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。 或者，各向异性表面纹理可以形成在下层和磁条本身上。 该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。

公开(公告)号：US20110186948A1

公开(公告)日：2011-08-04

申请号：US13055475

申请日：2009-07-21

Applicant: Pascal Pochet ,  Emmanuel Arras

Inventor： Pascal Pochet ,  Emmanuel Arras

IPC: H01L29/82 ,  H01F1/40 ,  B32B15/04 ,  B32B15/01 ,  C30B23/02 ,  H01F1/04

CPC classification number: H01F10/193 ,  G11C11/14 ,  H01F1/401 ,  H01F1/405 ,  H01F41/20 ,  H01L43/10 ,  Y10T428/12465

Abstract: Magnetic material based on at least one magnetic 3d transition metal element and at least one Group IVA semiconductor element, this material being homogeneous and having a Curie temperature (Tc) of 350 K or higher. Method for the production and uses thereof, especially in spintronics.

Abstract translation: 基于至少一个磁性3d过渡金属元素和至少一种IVA族半导体元件的磁性材料，该材料是均匀的并且具有350K或更高的居里温度（Tc）。 生产和使用方法，特别是自旋电子学。

公开(公告)号：US07961503B2

公开(公告)日：2011-06-14

申请号：US12355908

申请日：2009-01-19

Applicant: Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

Inventor： Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

IPC: G11C11/00

CPC classification number: H01L29/7881 ,  G11C11/14 ,  G11C16/0408 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/82

Abstract: An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.

Abstract translation: 一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮栅元件和磁场发生器。 磁场将存储器件中的电子引导到浮动栅极元件中。

公开(公告)号：US20110111259A1

公开(公告)日：2011-05-12

申请号：US12945127

申请日：2010-11-12

Applicant: Andrew Kunz

Inventor： Andrew Kunz

IPC: G11B5/706 ,  G11B5/74 ,  B21D26/14 ,  B82Y99/00

CPC classification number: G11B5/642 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  Y10T428/32 ,  Y10T428/325

Abstract: Disclosed herein are magnetic storage devices and uses therefor. The devices comprise an injection pad and a nanowire extending from an outer edge of the injection pad. The injection pad and the nanowire of the disclosed magnetic storage devices have a geometry that is designed to optimize high density memory storage via low magnetic field domain wall shifting. The devices may be utilized, for example, for generating and storing magnetic domain walls for application in memory devices, sensor devices, and logic devices.

Abstract translation: 这里公开了磁存储装置及其用途。 这些装置包括从注射垫的外边缘延伸的注射垫和纳米线。 所公开的磁存储装置的注入垫和纳米线具有几何形状，其设计用于通过低磁场域壁移位优化高密度存储器存储。 这些装置可以用于例如用于生成和存储用于存储器件，传感器装置和逻辑器件中的磁畴壁。

公开(公告)号：US20110110139A1

公开(公告)日：2011-05-12

申请号：US12773831

申请日：2010-05-04

Applicant: PETER MULLNER ,  WILLIAM B. KNOWLTON

Inventor： PETER MULLNER ,  WILLIAM B. KNOWLTON

IPC: G11C11/00 ,  B23Q17/00

CPC classification number: H01L41/12 ,  G11C11/14 ,  G11C11/5607 ,  H01L41/20 ,  Y10T29/49764

Abstract: Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in computer or other applications; such simultaneous operation of two (or more) of said multiple functionalities open new pathways for miniaturization of devices.

Abstract translation: 公开了能够对具有大于两个状态的多状态元件进行数据写入和读取数据的装置和方法。 元件可以由磁性和/或磁弹性材料制成，包括例如磁性形状记忆合金或耦合磁性和晶体状态的其它材料。 写入过程优选通过施加磁场和/或机械动作来进行。 读取过程优选通过原子力显微镜，磁力显微镜，自旋极化电子，磁光克尔效应，光学干涉测量或其他方法或其它方法/效果进行。 多状态元件的多功能（每个表示功能的结晶学，磁学和形状状态）允许包括读取和写入，感测和指示以及感测和控制的同时操作。 本发明的实施例可以用于例如用于存储，修改和访问设备，传感器，致动器，逻辑和存储器应用的数据。 实施例对于非易失性存储器或计算机或其它应用中的其它读/写，感测和指示和/或感测和控制功能可能是特别有效的; 两个（或多个）所述多个功能的这种同时操作打开用于设备小型化的新途径。

公开(公告)号：US20110090730A1

公开(公告)日：2011-04-21

申请号：US12690093

申请日：2010-01-19

Applicant: Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

Inventor： Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract translation: 磁存储器结构包括具有连续磁畴的存储器轨道。 每个磁畴具有一位的存储容量。 第一域壁注入层与存储器轨道的端子相交并连接，并且不断地存储第一二进制数据。 针对第一畴壁注入层的第二畴壁注入层与存储轨道的端子相交并连接，并且不断地存储与第一二进制数据不同的第二二进制数据。 存储器轨道和第一域壁注入层和第二域壁注入层中的一个一起形成畴壁。