公开(公告)号：US10509008B2

公开(公告)日：2019-12-17

申请号：US14700133

申请日：2015-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Chuan Liao ,  Chien-Kuo Yang ,  Yi-Shao Liu ,  Tung-Tsun Chen ,  Chan-Ching Lin ,  Jui-Cheng Huang ,  Felix Ying-Kit Tsui ,  Jing-Hwang Yang

IPC: G01N27/414

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

公开(公告)号：US20190056348A1

公开(公告)日：2019-02-21

申请号：US16165748

申请日：2018-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: G01N27/414 ,  H01L27/16 ,  H01L27/085

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L23/345 ,  H01L27/0211 ,  H01L27/085 ,  H01L27/16

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

公开(公告)号：US20190001333A1

公开(公告)日：2019-01-03

申请号：US15705730

申请日：2017-09-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hua Wen ,  Jui-Cheng Huang

IPC: B01L3/00 ,  F16K99/00 ,  G01N35/08 ,  G01N27/327 ,  G01N33/53 ,  G05D16/20

CPC classification number: B01L3/502769 ,  B01L3/502738 ,  B01L2300/0636 ,  B01L2300/0864 ,  B01L2400/0409 ,  B01L2400/0622 ,  B01L2400/0644 ,  F16K99/0028 ,  G01N15/0637 ,  G01N15/0656 ,  G01N27/3275 ,  G01N27/4145 ,  G01N33/5308 ,  G01N35/08 ,  G01N2015/0065 ,  G05D16/2066

Abstract: A fluidic testing platform and methods of its operation are described. The fluidic cartridge includes a first fluidic channel and a wheel assembly coupled to the first fluidic channel. The wheel assembly includes a center portion coupled to the first fluidic channel and designed to deliver fluid through one or more second fluidic channels that radiate outward from the center portion. The wheel assembly also includes a third fluidic channel arranged in a closed loop and one or more capillaries coupled to an outer surface of the third fluidic channel and arranged to radiate outward from the center portion. The wheel assembly is designed to rotate such that fluid is forced outward from the center portion through the one or more capillaries.

公开(公告)号：US20170219520A1

公开(公告)日：2017-08-03

申请号：US15492548

申请日：2017-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: G01N27/414 ,  H01L23/34 ,  H01L27/16

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L23/345 ,  H01L27/0211 ,  H01L27/085 ,  H01L27/16

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

公开(公告)号：US09709524B2

公开(公告)日：2017-07-18

申请号：US14713543

申请日：2015-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: H01L23/58 ,  G01N27/414 ,  H01L27/085 ,  H01L23/34 ,  H01L27/02

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L23/345 ,  H01L27/0211 ,  H01L27/085 ,  H01L27/16

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.