Method and apparatus for endpoint detection in a semiconductor wafer
etching system
    41.
    发明授权
    Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
    用于半导体晶片蚀刻系统中端点检测的方法和装置

    公开(公告)号:US5151584A

    公开(公告)日:1992-09-29

    申请号:US777770

    申请日:1991-10-15

    Abstract: A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: 1) scanning a semiconductor wafer with a narrowly focused laser beam; 2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; 3) parking the beam at the preferred spot; and 4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly responsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

    Abstract translation: 一种用于半导体晶片蚀刻系统中端点检测的方法,其特征在于以下步骤:1)用窄聚焦的激光束扫描半导体晶片; 2)分析光束的反射部分以确定晶片的优选平坦区域上的优选停车点; 3)将梁停在优先位置; 以及4)分析光束的反射部分以确定何时优选的平坦区域被蚀刻通过。 激光束的光点小于优选平坦区域的宽度,以消除在平坦区域的过渡边界处产生的噪声。 优选地,晶片沿着相同的光束路径扫描多次,以允许比较几次扫描以确定优选的停车位。 该装置包括一个波束形成组件; 扫描组件,其使激光束跨过晶片扫描; 检测组件,其响应于从所述晶片反射的所述激光束的一部分; 以及控制器,其操作激光器和扫描组件,并且响应于检测组件的输出。 当检测组件的输出指示特征蚀刻曲线的停止时,控制器产生可以自动关闭蚀刻系统的端点检测信号。

    Method and apparatus for displaying process end point signal based on
emission concentration within a processing chamber
    42.
    发明授权
    Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber 失效
    基于处理室内的发射浓度显示过程终点信号的方法和装置

    公开(公告)号:US5097430A

    公开(公告)日:1992-03-17

    申请号:US464836

    申请日:1990-01-16

    Inventor: Manoocher Birang

    CPC classification number: H01J37/3266 H01J37/32935 H01J37/32972

    Abstract: A method facilitates the display of a filtered signal which represents the variation of light intensity in a processing chamber over time. The filtered signal filters out the effects of a magnetic field which causes plasma within the processing chamber to rotate. The magnetic field is generated by a signal with a period T. Light intensity within the process chamber is detected to produce a voltage signal with a voltage amplitude which varies based on the light intensity within the process chamber. The voltage amplitude of the voltage signal is digitally sampled at a sampling interval to obtain sample values. Running averages of a preselected number of sample values are calculated. The period T is set equal to the preselected number of sample values times the sampling interval times an integer. For each newly displayed running average, a rectangular box may be superimposed over a graph of the running averages in order to graphically display changes in slope. The computer is programmed to look for an anticipated sequence of slopes.

    Abstract translation: 一种方法有助于显示表示处理室中光强随时间变化的滤波信号。 经滤波的信号滤除导致处理室内的等离子体旋转的磁场的影响。 磁场由具有周期T的信号产生。处理室内的光强度被检测以产生电压幅度,其电压幅度基于处理室内的光强度而变化。 以采样间隔对电压信号的电压振幅进行数字采样,以获得采样值。 计算预选数量样本值的运行平均值。 周期T被设置为等于采样间隔的预选数量乘以整数。 对于每个新显示的跑步平均值,矩形框可以叠加在跑步平均线的图表上,以图形地显示斜率的变化。 计算机被编程以寻找预期的斜坡序列。

    Method and apparatus for endpoint detection in a semiconductor wafer
etching system
    43.
    发明授权
    Method and apparatus for endpoint detection in a semiconductor wafer etching system 失效
    用于半导体晶片蚀刻系统中端点检测的方法和装置

    公开(公告)号:US4953982A

    公开(公告)日:1990-09-04

    申请号:US221979

    申请日:1988-07-20

    Abstract: A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.

    SUBSTRATE POLISHING METROLOGY USING INTERFERENCE SIGNALS
    45.
    发明申请
    SUBSTRATE POLISHING METROLOGY USING INTERFERENCE SIGNALS 失效
    使用干扰信号的基板抛光公式

    公开(公告)号:US20120107971A1

    公开(公告)日:2012-05-03

    申请号:US13345487

    申请日:2012-01-06

    Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

    Abstract translation: 用于化学机械抛光装置的抛光垫组件包括抛光垫,抛光垫具有抛光表面和与抛光表面相对的表面,用于附接到压板,以及形成在抛光垫中的固体透光窗。 光透射窗比抛光垫更透光。 透光窗具有光扩散底面。

    ELECTROPLATING APPARATUS BASED ON AN ARRAY OF ANODES
    46.
    发明申请
    ELECTROPLATING APPARATUS BASED ON AN ARRAY OF ANODES 审中-公开
    基于阳极阵列的电镀设备

    公开(公告)号:US20110198229A1

    公开(公告)日:2011-08-18

    申请号:US13097020

    申请日:2011-04-28

    CPC classification number: C25D17/12 C25D17/10 H01L21/2885 Y10S204/07

    Abstract: The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

    Abstract translation: 本发明一般涉及在基片上镀敷导电材料的装置和方法。 本发明的一个实施例提供一种用于在基板上镀覆导电材料的装置。 该装置包括被配置为保持电解质的流体池,被配置为支撑基板并且电连接基板的接触环以及设置在流体槽中的阳极组件,其中阳极组件包括排成行的多个阳极元件。

    SUBSTRATE POLISHING METROLOGY USING INTERFERENCE SIGNALS
    50.
    发明申请
    SUBSTRATE POLISHING METROLOGY USING INTERFERENCE SIGNALS 失效
    使用干扰信号的基板抛光公式

    公开(公告)号:US20100240281A1

    公开(公告)日:2010-09-23

    申请号:US12793438

    申请日:2010-06-03

    Abstract: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

    Abstract translation: 抛光衬底的方法包括:将抛光垫保持在具有抛光头的抛光垫上,其中抛光垫由压板支撑,在衬底和抛光垫之间产生相对运动以抛光衬底的侧面,产生光 光束并将光束引向基板以使光束撞击正在抛光的基板的侧面。 从基板反射的光在检测器处产生干涉信号。 从干扰信号计算均匀度的度量。

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