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公开(公告)号：US11251390B2
公开(公告)日：2022-02-15
申请号：US16851276
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Dae Young Chung , Kwanghee Kim , Eun Joo Jang , Tae Hyung Kim , Hongkyu Seo , Heejae Lee , Jaejun Chang
Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
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公开(公告)号：US11133468B2
公开(公告)日：2021-09-28
申请号：US16451443
申请日：2019-06-25
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Jaejun Chang , O Hyun Kwon , Tae Hyung Kim , Jhun Mo Son , Sang Jin Lee , Eun Joo Jang , Dae Young Chung
IPC: H01L51/00 , H01L51/50 , C09K11/88 , C09K11/02 , C09K11/66 , C09K11/74 , C09K11/59 , C09K11/65 , C09K11/08 , B82Y30/00
Abstract: A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein.
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43.发明授权公开(公告)号：US11050033B2
公开(公告)日：2021-06-29
申请号：US16391692
申请日：2019-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwanghee Kim , Oul Cho , Chan Su Kim , Tae Hyung Kim , Eun Joo Jang , Moon Gyu Han
IPC: H01L51/50 , C09K11/88 , H01L51/56 , C09K11/08 , C09K11/59 , C09K11/56 , C09K11/54 , C09K11/62 , C09K11/55 , C09K11/74 , C09K11/89 , C09K11/66 , C09K11/65 , C09K11/61 , C09K11/70 , C09K11/64
Abstract: A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.
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公开(公告)号：US10585226B2
公开(公告)日：2020-03-10
申请号：US15471033
申请日：2017-03-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Oul Cho , Eun Joo Jang , Hyun A Kang , Tae Hyung Kim , Jeong Hee Lee
Abstract: A light conversion device includes a frame through which incident light is received from a light source and converted light is emitted from the light conversion device, the frame including: an opening through which light of a first color is received from the light source and from which light of a second color is emitted from the light conversion device, and a wall which surrounds the opening, a substrate in the opening and supported by the wall, a light conversion layer which is disposed on the substrate and receives the light of the first color from the light source, the light conversion layer including a light converting particle which converts the light of the first color to the light of the second color, a first inorganic layer disposed on the light conversion layer, and a first organic layer disposed on the first inorganic layer.
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公开(公告)号：US10559712B2
公开(公告)日：2020-02-11
申请号：US16111848
申请日：2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam Park , Tae Hyung Kim , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Yongwook Kim , Taekhoon Kim , Jihyun Min , Yuho Won
IPC: H01L33/04 , C09K11/61 , H01L33/28 , H01L33/34 , C09K11/02 , C09K11/70 , C09K11/88 , H01L33/24 , H01L33/30 , H01L33/32
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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Patent Agency Ranking
公开(公告)号：US20190153317A1
公开(公告)日：2019-05-23
申请号：US16196117
申请日：2018-11-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
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47.发明授权Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure 有权半导体发光元件和具有设置在第二电极结构的第二焊盘电极下方的第一电极结构的导电通孔的发光器件公开(公告)号：US09166109B2
公开(公告)日：2015-10-20
申请号：US13900268
申请日：2013-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong In Yang , Tae Hyung Kim , Kwang Min Song , Seung Hwan Lee , Wan Tae Lim , Se Jun Han , Hyun Kwon Hong , Su Min Hwangbo
CPC classification number: H01L33/382 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.
Abstract translation: 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。
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公开(公告)号：US12227687B2
公开(公告)日：2025-02-18
申请号：US18302341
申请日：2023-04-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: C09K11/88 , C09K11/56 , H10K50/115
Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
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49.发明授权公开(公告)号：US11935984B2
公开(公告)日：2024-03-19
申请号：US18065910
申请日：2022-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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50.发明授权公开(公告)号：US11834597B2
公开(公告)日：2023-12-05
申请号：US17532439
申请日：2021-11-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee Lee , Hyun A Kang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang
CPC classification number: C09K11/883 , C01B19/007 , C09K11/02 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , H10K50/115
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent:
RCONHR Chemical Formula 1
wherein each R is as defined herein;
heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture;
adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and
heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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