公开(公告)号：US09166109B2

公开(公告)日：2015-10-20

申请号：US13900268

申请日：2013-05-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong In Yang ,  Tae Hyung Kim ,  Kwang Min Song ,  Seung Hwan Lee ,  Wan Tae Lim ,  Se Jun Han ,  Hyun Kwon Hong ,  Su Min Hwangbo

IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

摘要翻译： 半导体发光元件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极结构包括连接到第一导电类型半导体层的导电通孔。 第二电极结构连接到第二导电类型半导体层。 具有开放区域的绝缘部分暴露第一和第二电极结构的一部分同时覆盖第一和第二电极结构。 第一和第二焊盘电极形成在由开放区域暴露的第一和第二电极结构上，并连接到第一和第二电极结构。

公开(公告)号：US09087932B2

公开(公告)日：2015-07-21

申请号：US13948797

申请日：2013-07-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Hun Kim ,  Sung Joon Kim ,  Yong Il Kim ,  Yung Ho Ryu ,  Myeong Rak Son ,  Su Yeol Lee ,  Seung Hwan Lee ,  Tae Sung Jang ,  Su Min Hwangbo

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L33/0079

摘要： A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

摘要翻译： 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。