Abstract:
A multi resonator system is provided including a support substrate and a plurality of multi resonators. Each of the plurality of multi resonators includes a plurality of resonators, and one end of each of the plurality of resonators is fixed to the support substrate. Center frequencies of different ones of the plurality of multi resonators are different from each other, and the plurality of resonators within each individual multi resonator all have a same center frequency.
Abstract:
An audio sensing device having a resonator array and a method of acquiring frequency information using the audio sensing device are provided. The audio sensing device includes a substrate having a cavity formed therein, a membrane provided on the substrate and covering the cavity, and a plurality of resonators provided on the membrane and respectively sensing sound frequencies of different frequency bands.
Abstract:
A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.
Abstract:
A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.
Abstract:
Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.
Abstract:
An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.
Abstract:
A neuromorphic apparatus configured to process a multi-bit neuromorphic operation including a single axon circuit, a single synaptic circuit, a single neuron circuit, and a controller. The single axon circuit is configured to receive, as a first input, an i-th bit of an n-bit axon. The single synaptic circuit is configured to store, as a second input, a j-th bit of an m-bit synaptic weight and output a synaptic operation value between the first input and the second input. The single neuron circuit is configured to obtain each bit value of a multi-bit neuromorphic operation result between the n-bit axon and the m-bit synaptic weight, based on the output synaptic operation value. The controller is configured to respectively determine the i-th bit and the j-th bit to be sequentially assigned for each time period of different time periods to the single axon circuit and the single synaptic circuit.
Abstract:
A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.
Abstract:
Provided is a micro electro-mechanical system (MEMS) sensor including a substrate including a first cavity, a first frame including a second cavity at least partially overlapping the first cavity, at least a portion of the first frame being spaced apart from the substrate, a plurality of resonators, each of the plurality of resonators including a first end connected to the first frame and a second end extending into the second cavity, and a second frame including a first region connected to the first frame and a second region spaced apart from the first frame and connected to the substrate.
Abstract:
A microphone package and an electronic apparatus including the same are provided. The microphone package includes a substrate in which an acoustic hole and a via hole are formed; an acoustic sensor attached to a front surface of the substrate and covering the acoustic hole; a first electrode pad provided on the front surface of the substrate; a second electrode pad provided on a rear surface of the substrate and electrically connected to the first electrode pad through the via hole; and a third electrode pad on a side surface of the substrate and electrically connected to the second electrode pad.