公开(公告)号：US20240343552A1

公开(公告)日：2024-10-17

申请号：US18615358

申请日：2024-03-25

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling

IPC: B81B3/00 ,  H04R7/06 ,  H04R19/04

CPC classification number: B81B3/0021 ,  H04R7/06 ,  H04R19/04 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04 ,  H04R2201/003

Abstract: A microelectromechanical component for interacting with a pressure gradient of a fluid. The component has a substrate with a through-cavity, a microelectromechanical transducer including a middle support layer and two diaphragm elements spaced apart from the middle support layer. The middle support layer has at least one center electrode. The diaphragm elements each have a separately contactable outer electrode. The diaphragm elements together with the middle support layer form one or more cavities on both sides of the middle support layer. The microelectromechanical transducer spans the through-cavity at least partially and is deformable along a vertical movement direction. The microelectromechanical transducer has a bending region. A deformation of the microelectromechanical transducer in the vertical movement direction results in a bending of the bending region. Spacers are arranged between the middle support layer and the diaphragm elements. At least one of the spacers is arranged in the bending region.

公开(公告)号：US20240158221A1

公开(公告)日：2024-05-16

申请号：US18055140

申请日：2022-11-14

Applicant: Robert Bosch Gmbh

Inventor： Christoph Schelling ,  Timothy Schultz

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2201/0257 ,  B81B2201/036 ,  B81B2203/0118 ,  B81B2203/053

Abstract: A fluidic microelectromechanical system (MEMS) device includes fluid interaction elements (FIEs) that can be displaced by an actuator to generate fluid flow. The FIEs include a serial arrangement of cantilevered lever arms to achieve, for example, high sound pressure levels in a micro speaker or high pump rates in a micropump as compared to some conventional MEMS devices.

公开(公告)号：US11604093B2

公开(公告)日：2023-03-14

申请号：US17262892

申请日：2019-07-09

Applicant: Robert Bosch GmbH

Inventor： Martin Husnik ,  Christian Huber ,  Reinhold Roedel ,  Benedikt Stein ,  Christoph Schelling

IPC: G01J3/26 ,  G01J3/02 ,  G01J3/28

Abstract: A spectrometer device includes a Fabry-Perot interferometer unit, which comprises a first carrier substrate, wherein the first carrier substrate is arranged on a lower side of the Fabry-Perot interferometer unit and includes an optical aperture. The spectrometer includes at least one of a first substrate, which is arranged on an upper side of the Fabry-Perot interferometer unit, which faces away from the lower side, and a second substrate with the first carrier substrate arranged with the lower side on the second substrate. The spectrometer further includes a photodetector device arranged on or in the at least one of the second substrate and the first substrate. A first electrical connection region of the photodetector device and a second electrical connection region of the Fabry-Perot interferometer unit are electrically contacted from the same direction.

公开(公告)号：US20220004078A1

公开(公告)日：2022-01-06

申请号：US16919581

申请日：2020-07-02

Applicant: Robert Bosch GmbH

Inventor： Ning Wang ,  Alexander Huebel ,  Christoph Schelling ,  John Niklas Caspers ,  Hartmut Kueppers ,  Stefan Pinter

IPC: G02F1/313

Abstract: An optical switch includes a bus waveguide supported by a substrate, a coupling waveguide suspended over the bus waveguide, a reaction electrode coupled with, and adjacent to, the coupling waveguide, an actuation electrode supported by the substrate and configured to control a position of the coupling waveguide relative to the bus waveguide via the reaction electrode, and an optical antenna coupled with the coupling waveguide and disposed at a fixed distance from the bus waveguide. When a voltage difference between the reaction electrode and the actuation electrode is less than a lower threshold, the coupling waveguide is positioned a first distance from the bus waveguide, when the voltage difference between the reaction electrode and the actuation electrode is greater than an upper threshold, the coupling waveguide is positioned a second distance from the bus waveguide, and the second distance is less than the first distance.

公开(公告)号：US10781097B2

公开(公告)日：2020-09-22

申请号：US16063574

申请日：2017-01-11

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling

IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02 ,  H01L23/00

Abstract: A micromechanical component, having a carrier wafer having at least one micromechanical structure that is situated in a cavern; a thin-layer cap situated on the carrier wafer, by which the cavern is hermetically sealed; and a cap wafer situated on the thin-layer cap in the region of the cavern having the micromechanical structure, the cap wafer hermetically sealing a region of the thin-layer cap above the cavern.

公开(公告)号：US20180141803A1

公开(公告)日：2018-05-24

申请号：US15807811

申请日：2017-11-09

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81B2201/0235 ,  B81B2207/012 ,  B81C1/00095 ,  B81C1/00301 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: A MEMS component including a first substrate having at least one first insulating layer and a first metallic coating on a first side; and including a second substrate having at least one second insulating layer and a second metallic coating on a second side, the second substrate including a micromechanical functional element, which is connected electroconductively to the second metallic layer. The first side and the second side are positioned on each other, the first insulating layer and the second insulating layer being interconnected, and the first metallic coating and the second metallic coating being interconnected. A method for manufacturing a MEMS component is also described.

公开(公告)号：US20170230756A1

公开(公告)日：2017-08-10

申请号：US15426610

申请日：2017-02-07

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Thomas Northemann

IPC: H04R19/02 ,  H04R1/28 ,  H04R31/00 ,  H04R7/12

CPC classification number: H04R19/02 ,  H04R1/2803 ,  H04R7/125 ,  H04R31/003 ,  H04R2201/003

Abstract: A MEMS loudspeaker device and a corresponding manufacturing method are described. The MEMS loudspeaker device includes a first substrate having a first front side and a first rear side, which includes a first rear side cavity, which is at least partially covered by a sound generation device; a second substrate having a second front side and a second rear side, which includes a second rear side cavity, which is covered by a first perforated plate device; the second rear side being bonded to the first front side in such a way that the second rear side cavity is situated above the sound generation device; and a second perforated plate device, which is attached above the first perforated plate device; at least one of the first perforated plate device and of the second plate device being elastically deflectable in such a way that a passage of sound of the sound generation device may be modulated by an interaction of the first perforated plate device and the second perforated plate device.

公开(公告)号：US09571938B2

公开(公告)日：2017-02-14

申请号：US14558993

申请日：2014-12-03

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Rolf Scheben ,  Ricardo Ehrenpfordt

IPC: H04R23/00 ,  H04R19/00 ,  B81B3/00 ,  H04R19/04 ,  H04R29/00

CPC classification number: H04R19/005 ,  B81B3/0018 ,  B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2201/0285 ,  H04R19/04 ,  H04R29/004

Abstract: A capacitive MEMS microphone element is described which may be used optionally for detecting acoustic signals (microphone mode) or for detecting ultrasound signals in a defined frequency range (ultrasound mode). In the layered structure of the MEMS microphone element, at least two carrier elements for the two electrode sides of a capacitor system are formed one above the other and at a distance from one another for signal detection. At least one of the two carrier elements is sound pressure-sensitive and at least one of the two electrode sides includes at least two electrode segments which are electrically contactable independent of one another, which together with the at least one electrode of the other electrode side form partial capacitances which are independent of one another.

Abstract translation: 描述了可以可选地用于检测声信号（麦克风模式）或用于在限定的频率范围（超声模式）中检测超声信号的电容式MEMS麦克风元件。 在MEMS麦克风元件的分层结构中，用于电容器系统的两个电极侧的至少两个载体元件彼此之间并且彼此间隔一定距离地形成用于信号检测。 两个载体元件中的至少一个是声压敏的，并且两个电极侧中的至少一个包括彼此独立地电接触的至少两个电极段，这两个电极段与另一个电极侧的至少一个电极 形成彼此独立的部分电容。

公开(公告)号：US20170026754A1

公开(公告)日：2017-01-26

申请号：US15211137

申请日：2016-07-15

Applicant: Robert Bosch GmbH

Inventor： Thomas Buck ,  Fabian Purkl ,  Michael Stumber ,  Ricardo Ehrenpfordt ,  Rolf Scheben ,  Benedikt Stein ,  Christoph Schelling

IPC: H04R7/14 ,  H04R17/02 ,  H04R7/18

CPC classification number: H04R7/14 ,  B81B3/0072 ,  H04R7/18 ,  H04R17/02 ,  H04R19/005 ,  H04R19/04 ,  H04R23/006 ,  H04R31/006 ,  H04R2201/003

Abstract: For a MEMS component, in the layer structure of which at least one sound-pressure-sensitive diaphragm element is formed, which spans an opening or cavity in the layer structure and the deflections of which are detected with the aid of at least one piezosensitive circuit element in the attachment area of the diaphragm element, design measures are provided, by which the stress distribution over the diaphragm surface may be influenced intentionally in the event of deflection of the diaphragm element. In particular, measures are provided, by which the mechanical stresses are intentionally introduced into predefined areas of the diaphragm element, to thus amplify the measuring signal. For this purpose, the diaphragm element includes at least one designated bending area, which is defined by the structuring of the diaphragm element and is more strongly deformed in the event of sound action than the adjoining diaphragm sections.

Abstract translation: 对于MEMS部件，在形成有至少一个声压敏膜片元件的层结构中，跨越层结构中的开口或空腔，并借助于至少一个压敏电路检测其偏转 在隔膜元件的附接区域中设置元件，设计措施可以在隔膜元件偏转的情况下有意地影响隔膜表面上的应力分布。 特别地，提供了将机械应力有意地引入隔膜元件的预定区域中的措施，从而放大测量信号。 为此，隔膜元件包括至少一个指定的弯曲区域，其由隔膜元件的结构限定，并且在相邻的隔膜部分发生声音作用的情况下更强烈地变形。

公开(公告)号：US09525056B2

公开(公告)日：2016-12-20

申请号：US14028610

申请日：2013-09-17

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Walter Daves

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/7788 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/42372 ,  H01L29/66462 ,  H01L29/7789 ,  H01L29/7855 ,  H01L2924/1033

Abstract: A vertical microelectronic component includes a semiconductor substrate having a front side and a back side, and a multiplicity of fins formed on the front side. Each fin has a side wall and an upper side and is separated from other fins by trenches. Each fin includes a GaN/AlGaN heterolayer region formed on the side wall and including a channel region extending essentially parallel to the side wall. Each fin includes a gate terminal region arranged above the GaN/AlGaN heterolayer region and electrically insulated from the channel region in the associated trench on the side wall. A common source terminal region arranged above the fins is connected to a first end of the channel region in a vicinity of the upper sides. A common drain terminal region arranged above the back side is connected to a second end of the channel region in a vicinity of the front side.

Abstract translation: 垂直微电子部件包括具有前侧和后侧的半导体基板和形成在前侧的多个翅片。 每个翅片具有侧壁和上侧，并且通过沟槽与其它翅片分离。 每个散热片包括形成在侧壁上并包括基本上平行于侧壁延伸的沟道区域的GaN / AlGaN杂层区域。 每个鳍包括布置在GaN / AlGaN多层区域上方的栅极端子区域，并且与侧壁上的相关沟槽中的沟道区域电绝缘。 布置在翅片上方的公共源极端子区域在上侧附近与沟道区域的第一端连接。 布置在背面的上方的公共漏极端子区域在前侧附近与沟道区域的第二端连接。