公开(公告)号：US20190214554A1

公开(公告)日：2019-07-11

申请号：US15868367

申请日：2018-01-11

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Wei-Chuan Chen

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01F10/3254 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density is disclosed. In one aspect, to fabricate MTJs in an MRAM array with reduced MTJ row pitch, a first patterning process is performed to provide separation areas in an MTJ layer between what will become rows of fabricated MTJs, which facilitates MTJs in a given row sharing a common bottom electrode. This reduces the etch depth and etching time needed to etch the individual MTJs in a subsequent step, can reduce lateral projections of sidewalls of the MTJs, thereby relaxing the pitch between adjacent MTJs, and may allow an initial MTJ hard mask layer to be reduced in height. A subsequent second patterning process is performed to fabricate individual MTJs. Additional separation areas are etched between free layers of adjacent MTJs in a given row to fabricate the individual MTJs.

公开(公告)号：US20180372685A1

公开(公告)日：2018-12-27

申请号：US16057452

申请日：2018-08-07

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan Chen ,  Jung Pill Kim ,  Seung Hyuk Kang

IPC: G01N27/74 ,  G01R33/09 ,  B82Y25/00

Abstract: Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing are provided. These MR sensors may be used as biosensors to detect the presence of biological materials as an example. An MR sensor includes dual MR sensor devices that may be tunnel magnetoresistive (TMR) devices or giant magnetoresistive (GMR) devices as examples. The MR devices are arranged such that a channel is formed between the MR devices for receiving magnetic nanoparticles. A magnetic stray field generated by the magnetic nanoparticles causes free layers in the MR devices to rotate in opposite directions, thus causing differential resistances between the MR devices for greater sensing sensitivity. Further, as another aspect, by providing the channel between the MR devices, the magnetic stray field generated by the magnetic nanoparticles can more easily rotate the magnetic moment orientation of the free layers in the MR devices, thus further increasing sensitivity.

公开(公告)号：US20180284200A1

公开(公告)日：2018-10-04

申请号：US15474339

申请日：2017-03-30

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan Chen ,  Wah Nam Hsu ,  Xia Li ,  Seung Hyuk Kang ,  Nicholas Ka Ming Stevens-Yu

IPC: G01R33/09 ,  H01L43/08 ,  H01L27/22 ,  G01R33/12

Abstract: Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity are disclosed. For example, a TMR sensor may be used as a biosensor to detect the presence of biological materials. In aspects disclosed herein, free layers of at least two TMR devices in a TMR sensor are fabricated to exhibit different magnetic properties from each other (e.g., MR ratio, magnetic anisotropy, coercivity) so that each TMR device will exhibit a different change in resistance to a given magnetic stray field for increased magnetic field detection sensitivity. For example, the TMR devices may be fabricated to exhibit different magnetic properties such that one TMR device exhibits a greater change in resistance in the presence of a smaller magnetic stray field, and another TMR device exhibits a greater change in resistance in the presence of a larger magnetic stray field.

公开(公告)号：US09935258B2

公开(公告)日：2018-04-03

申请号：US14994212

申请日：2016-01-13

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Seung H. Kang

IPC: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

公开(公告)号：US09614143B2

公开(公告)日：2017-04-04

申请号：US14735006

申请日：2015-06-09

Applicant: QUALCOMM Incorporated

Inventor： Yu Lu ,  Wei-Chuan Chen ,  Seung Hyuk Kang

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A semiconductor device may include a magnetoresistive random-access memory (MRAM) trench having a first conductive barrier liner and a second conductive barrier liner. The MRAM trench may land on a hard mask of a magnetic tunnel junction (MTJ) within an MTJ region of the semiconductor device. The semiconductor device may also include a logic trench having the first conductive barrier liner. The semiconductor device may further include a logic via having the first conductive barrier liner. The logic via may land on a first portion of a conductive interconnect (Mx) within a logic region of the semiconductor device.