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公开(公告)号：US20220376069A1
公开(公告)日：2022-11-24
申请号：US17326112
申请日：2021-05-20
Applicant: OMNIVISION TECHNOLOGIES, INC.
IPC: H01L29/423 , H01L27/146 , H01L29/66 , H01L29/78
Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.
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公开(公告)号：US11476290B2
公开(公告)日：2022-10-18
申请号：US16918929
申请日：2020-07-01
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Hui Zang , Gang Chen , Kenny Geng
IPC: H01L27/146 , H04N5/378
Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.
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公开(公告)号：US11462579B2
公开(公告)日：2022-10-04
申请号：US16804671
申请日：2020-02-28
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146 , H01L29/423
Abstract: A method for forming a transfer gate includes (i) forming a dielectric pillar on a surface of a semiconductor substrate and (ii) growing an epitaxial layer on the semiconductor substrate and surrounding the dielectric pillar. The dielectric pillar has a pillar height that exceeds an epitaxial-layer height of the epitaxial layer relative to the surface. The method also includes removing the dielectric pillar to yield a trench in the epitaxial layer. A pixel includes a doped semiconductor substrate having a front surface opposite a back surface. The front surface forms a trench extending a depth zT with respect to the front surface within the doped semiconductor substrate along a direction z perpendicular to the front surface and the back surface. The pixel has a dopant concentration profile, a derivative thereof with respect to direction z being discontinuous at depth zT.
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公开(公告)号：US11329085B2
公开(公告)日：2022-05-10
申请号：US16548697
申请日：2019-08-22
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146
Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.
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公开(公告)号：US20220116516A1
公开(公告)日：2022-04-14
申请号：US17558199
申请日：2021-12-21
Applicant: OMNIVISION TECHNOLOGIES, INC.
Inventor： Gang Chen , Yuanmei Zheng , Qin Wang , Cunyu Yang , Guannan Chen , Duli Mao , Dyson H. Tai , Lindsay Alexander Grant
Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.
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Patent Agency Ranking
公开(公告)号：US11121169B2
公开(公告)日：2021-09-14
申请号：US16452272
申请日：2019-06-25
Applicant: OmniVision Technologies, Inc.
Inventor： Chiao-Ti Huang , Shiyu Sun , Gang Chen
IPC: H01L27/146 , H01L21/28
Abstract: A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.
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公开(公告)号：US10462433B2
公开(公告)日：2019-10-29
申请号：US15967678
申请日：2018-05-01
Applicant: OmniVision Technologies, Inc.
Inventor： Gang Chen , Duli Mao , Dyson Hsin-Chih Tai
Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.
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公开(公告)号：US10249675B1
公开(公告)日：2019-04-02
申请号：US15707940
申请日：2017-09-18
Applicant: OmniVision Technologies, Inc.
IPC: H01L27/146
Abstract: An image sensor comprises a semiconductor material having a front side and a back side opposite the front side; a dielectric layer disposed on the front side of the semiconductor material; a poly layer disposed on the dielectric layer; an interlayer dielectric material covering both the poly layer and the dielectric layer; an inter-metal layer disposed on the interlayer dielectric material, wherein a metal interconnect is disposed in the inter-metal layer; and a contact pad trench extending from the back side of the semiconductor material into the semiconductor material, wherein the contact pad trench comprises a contact pad disposed in the contact pad trench, wherein the contact pad and the metal interconnect are coupled with a plurality of contact plugs; and at least an air gap isolates the contact pad and side walls of the contact pad trench. The poly layer and the semiconductor material between adjacent two STI structures of a plurality of first and second STI structures are used as hard masks to form the plurality of contact plugs by selectively removing the dielectric materials between a first side of the plurality of first STI structures and the metal interconnect, wherein each of the plurality of contact plugs extends from the first side of each of the plurality of first STI structures through each of the plurality of first STI structures into the interlayer dielectric material and vertically abuts the metal interconnect.
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49.发明授权公开(公告)号：US10104285B2
公开(公告)日：2018-10-16
申请号：US15249787
申请日：2016-08-29
Applicant: OmniVision Technologies, Inc.
Inventor： Qin Wang , Gang Chen , Dajiang Yang
Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.
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公开(公告)号：US10103185B2
公开(公告)日：2018-10-16
申请号：US15874648
申请日：2018-01-18
Applicant: OmniVision Technologies, Inc.
Inventor： Dajiang Yang , Gang Chen , Duli Mao , Dyson H. Tai
IPC: H04N5/347 , H01L27/146 , H01L31/0392 , H01L31/18
Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.
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