公开(公告)号：US20140318500A1

公开(公告)日：2014-10-30

申请号：US14354200

申请日：2011-10-26

申请人： Masahiko Masubuchi ,  Satoshi Taniguchi ,  Koji Kitano ,  Hiroshi Eto

发明人： Masahiko Masubuchi ,  Satoshi Taniguchi ,  Koji Kitano ,  Hiroshi Eto

IPC分类号： F02D41/30

CPC分类号： F02D41/30 ,  F02D19/029 ,  F02D41/0027 ,  F02D2200/0602 ,  F02D2200/0612 ,  Y02T10/32

摘要： An object of the present invention is to provide a technology with which when a gaseous fuel is supplied into a fuel tank of a vehicle with an internal combustion engine that uses gaseous fuel, properties of the supplied gaseous fuel can be determined promptly. To achieve the object, the fuel property determination system for a vehicle equipped with an internal combustion engine using gaseous fuel according to the present invention is adapted to calculate, when gaseous fuel is supplied to the fuel tank, the gas constant of the supplied gaseous fuel using a cross sectional area of a passage for delivering gaseous fuel to the fuel tank from a filler port and a change in the pressure in the fuel tank as parameters and to calculate the concentration of inert gases contained in the gaseous fuel using the gas constant as a parameter.

摘要翻译： 本发明的目的是提供一种技术，其中当气体燃料被供给到具有使用气体燃料的内燃机的车辆的燃料箱中时，可以迅速地确定供应的气体燃料的特性。 为了实现该目的，根据本发明的配备有使用气体燃料的内燃机的车辆的燃料特性确定系统适用于当向燃料箱供应气态燃料时，计算供应的气体燃料的气体常数 使用通道的横截面积，将气体燃料从填料口输送到燃料箱，并将燃料箱中的压力变化作为参数，并使用气体常数计算气体燃料中所含的惰性气体的浓度，使用气体常数作为 一个参数。

公开(公告)号：US08581245B2

公开(公告)日：2013-11-12

申请号：US13006736

申请日：2011-01-14

申请人： Satoshi Taniguchi

发明人： Satoshi Taniguchi

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： There is provided a thin film transistor including: a gate electrode; a pair of source/drain electrodes; a first oxide semiconductor layer provided between the gate electrode, and the pair of source/drain electrodes, and forming a channel; and a second oxide semiconductor layer provided on the pair of source/drain electrodes side of the first oxide semiconductor layer, and having a polarity different from that of the first oxide semiconductor layer.

摘要翻译： 提供一种薄膜晶体管，包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的第一氧化物半导体层; 以及设置在所述第一氧化物半导体层的所述一对源极/漏极侧的第二氧化物半导体层，并且具有与所述第一氧化物半导体层的极性不同的极性。

公开(公告)号：US20130062664A1

公开(公告)日：2013-03-14

申请号：US13555564

申请日：2012-07-23

申请人： Katsuhiko Takeuchi ,  Satoshi Taniguchi

发明人： Katsuhiko Takeuchi ,  Satoshi Taniguchi

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7784 ,  H01L29/1066 ,  H01L29/205 ,  H01L29/207 ,  H01L29/517 ,  H01L29/7785 ,  H01L29/802

摘要： A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic Fermi level in the channel layer than in the channel layer; a low-resistance region provided in a surface layer of the barrier layer, in which resistance is kept lower than portions around by containing impurity; a source electrode and a drain electrode connected to the barrier layer at positions sandwiching the low-resistance region; a gate insulating layer provided on the low-resistance region; and a gate electrode provided above the low-resistance region through the gate insulating layer.

摘要翻译： 半导体器件包括：由化合物半导体制成的沟道层; 阻挡层，设置在通道层上方，由化合物半导体构成，其中相对于沟道层的结的载流子行进侧的能带比通道层中的固有费米能级远离沟道层; 设置在阻挡层的表层中的低电阻区域，其中电阻通过含有杂质而保持低于周围的部分; 在夹着所述低电阻区域的位置连接到所述阻挡层的源电极和漏电极; 设置在所述低电阻区域上的栅极绝缘层; 以及通过栅极绝缘层设置在低电阻区域上方的栅电极。

公开(公告)号：US20120206253A1

公开(公告)日：2012-08-16

申请号：US13060139

申请日：2009-10-28

申请人： Satoshi Taniguchi

发明人： Satoshi Taniguchi

IPC分类号： B60Q9/00

CPC分类号： G01N33/2835

摘要： When biomass fuel reacts with oxygen for a long period of time, an amount of acid ions in a fuel tank is increased with time. However, when metallic ions are generated for some reason and the reaction proceeds to change the acid ions into metallic salts, the increase rate of the amount of the acid ions in the fuel tank becomes slow. When the metallic salt forming reaction proceeds rapidly, the amount of the acid ions may even be reduced. Therefore, in the embodiment, the change of the acid ions into the metallic salts in a fuel is detected. Unless the fuel is newly supplied by refueling, the decrease of the amount of acid ions in the fuel can be considered as a change into metallic salts. Accordingly, the generation of metallic salts can be detected by monitoring the decrease of the amount of acid ions in the fuel. Thus, clogging of a fuel supply system or the like caused by the metallic salt forming reaction can be prevented.

摘要翻译： 当生物质燃料长时间与氧气反应时，燃料箱中的酸离子量随时间增加。 然而，当由于某些原因产生金属离子并且反应进行以将酸离子改变为金属盐时，燃料箱中的酸离子的量的增加速度变慢。 当金属盐形成反应快速进行时，酸离子的量甚至可能降低。 因此，在本实施方式中，检测到燃料中的酸离子变成金属盐。 除非通过加油新提供燃料，否则燃料中酸离子的量的减少可以被认为是变成金属盐。 因此，可以通过监测燃料中酸离子的量的减少来检测金属盐的产生。 因此，可以防止由金属盐形成反应引起的燃料供给系统等的堵塞。

公开(公告)号：US08148238B2

公开(公告)日：2012-04-03

申请号：US12379827

申请日：2009-03-03

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/30

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

公开(公告)号：US08089629B2

公开(公告)日：2012-01-03

申请号：US12311425

申请日：2008-05-14

申请人： Rie Osaki ,  Naoyo Kato ,  Noriyasu Amano ,  Satoshi Taniguchi ,  Kaori Yoshida ,  Yukihiro Tsukasaki

发明人： Rie Osaki ,  Naoyo Kato ,  Noriyasu Amano ,  Satoshi Taniguchi ,  Kaori Yoshida ,  Yukihiro Tsukasaki

IPC分类号： G01N21/00

CPC分类号： G01N21/43 ,  G01N21/274 ,  G01N21/31 ,  G01N21/85 ,  G01N33/2829 ,  G01N2021/3181

摘要： It is an object of the present invention to provide a fuel property detection apparatus that excels in durability and reliability and is capable of accurately detecting the biofuel concentration in a mixture of hydrocarbon fuel and biofuel with a compact and simple configuration. A fuel property sensor 22 includes a light-emitting device 28 and a light-receiving device 32, which detect the optical transmittance of a fuel in a fuel path 26; and a light-emitting device 36 and a position sensitive device 38, which detect the refractive index of the fuel. As the optical transmittance correlates with the RME concentration of the fuel, the RME concentration can be calculated from the detected optical transmittance. As the refractive index correlates with the cetane number of the fuel, the cetane number can be calculated from the detected refractive index. The optical transmittance is detected through the use of light within a wavelength range of 640 nm to 680 nm.

摘要翻译： 本发明的目的是提供一种耐久性和可靠性优异且能够精确地检测碳氢化合物燃料和生物燃料的混合物中的生物燃料浓度的燃料特性检测装置，其结构紧凑且简单。 燃料特性传感器22包括检测燃料路径26中的燃料的光透射率的发光装置28和光接收装置32; 以及检测燃料的折射率的发光装置36和位置敏感装置38。 由于透光率与燃料的RME浓度相关，可以从检测到的光透射率计算RME浓度。 由于折射率与燃料的十六烷值相关，可以从检测的折射率计算十六烷值。 通过使用在640nm至680nm的波长范围内的光来检测光学透射率。

公开(公告)号：US20100211289A1

公开(公告)日：2010-08-19

申请号：US12680005

申请日：2008-09-24

申请人： Kaori Yoshida ,  Satoshi Taniguchi

发明人： Kaori Yoshida ,  Satoshi Taniguchi

IPC分类号： F02D41/30 ,  G01N21/25 ,  G01N21/59 ,  G01N21/88 ,  B60Q1/00

CPC分类号： G01N33/2829

摘要： A transmittance sensor that detects the optical transmittance of biofuel is provided on a fuel tank that stores biofuel to be supplied to an internal combustion engine. An ECU periodically acquires the optical transmittance detected by the transmittance sensor, and calculates the amount of change from the previous value. In addition, the ECU calculates a degradation index value indicating the degree of degradation of the biofuel by accumulating the amount of change.

摘要翻译： 检测生物燃料的光透射率的透射率传感器设置在存储要供给内燃机的生物燃料的燃料箱上。 ECU周期性地获取由透射率传感器检测到的光透射率，并从前一值计算出变化量。 此外，ECU通过累积变化量来计算表示生物燃料的劣化程度的劣化指标值。

公开(公告)号：US20060183052A1

公开(公告)日：2006-08-17

申请号：US11397551

申请日：2006-04-05

申请人： Hiroshi Deguchi ,  Hajime Yuzurihara ,  Eiko Hibino ,  Hiroshi Miura ,  Mikiko Abe ,  Shinya Narumi ,  Takeshi Kibe ,  Katsuyuki Yamada ,  Satoshi Taniguchi

发明人： Hiroshi Deguchi ,  Hajime Yuzurihara ,  Eiko Hibino ,  Hiroshi Miura ,  Mikiko Abe ,  Shinya Narumi ,  Takeshi Kibe ,  Katsuyuki Yamada ,  Satoshi Taniguchi

IPC分类号： G11B7/24

CPC分类号： G11B7/0062 ,  G11B7/24 ,  G11B7/243 ,  G11B7/252 ,  G11B7/2534 ,  G11B7/257 ,  G11B7/259 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10T428/21

摘要： An optical disc having a transition linear velocity of 8-11 m/s when irradiating continuous light with 11±1 mW and a wavelength of 660±10 nm using a pickup head with a numerical aperture (NA) of 0.65, and satisfying the following condition: ΔR=|Rb−Ra|≦3% where Rb is a reflectance of an unrecorded area, and Ra is a reflectance of the top of an eye pattern after ten cycles of recording. In one recording mode therefor, the disc is rotated at a constant angular velocity so as to have a linear velocity of 3-4 m/s on an innermost track and a linear velocity of 8-9 m/s on an outermost track. In another mode, the disc is rotated at a constant angular velocity so as to have a linear velocity of 5-6 m/s on an innermost track and a linear velocity of 13-14 m/s on an outermost track.

摘要翻译： 使用数值孔径（NA）为0.65的拾取头照射11±1mW和波长为660±10nm的连续光时，具有8-11m / s的过渡线速度的光盘，并且满足以下条件 条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaR = | Rb-Ra | <= 3％<？in-line-formula description =“In-line Formulas” end =“tail”？>其中Rb是未记录区域的反射率，Ra是十次记录周期之后的眼图的顶部的反射率。 在一种记录模式中，盘以恒定的角速度旋转，以便在最内侧的轨道上具有3-4m / s的线速度，在最外侧轨道上具有8-9m / s的线速度。 在另一种模式中，盘以恒定的角速度旋转，以便在最内侧的轨道上具有5-6m / s的线速度，在最外侧轨道上具有13-14m / s的线速度。

公开(公告)号：US20050127398A1

公开(公告)日：2005-06-16

申请号：US11038255

申请日：2005-01-21

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8234 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种场效应半导体器件的制造方法包括以下步骤：在由式Al x Y y表示的基于氮化镓的化合物半导体构成的半导体层上形成栅电极， 其中x + y = 1,0 <= x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。

公开(公告)号：US06524882B2

公开(公告)日：2003-02-25

申请号：US09824238

申请日：2001-04-03

申请人： Motonobu Takeya ,  Satoshi Taniguchi

发明人： Motonobu Takeya ,  Satoshi Taniguchi

IPC分类号： H01L2100

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/3228 ,  Y10S438/933

摘要： A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.

摘要翻译： 在由蓝宝石制成的基板上形成掺杂有p型杂质的氮化物III-V族化合物半导体。 然后将衬底放置在一对RF电极之间，并且在RF电极之间施加射频场。 通过该操作，存在于化合物半导体中的电子侵蚀p型杂质与氢之间的键合，从而切断接合。 由此解离的氢原子从化合物半导体释放，从而活化p型杂质。 在这种情况下，不需要通过加热器等来加热化合物半导体。