Network search mapping and execution

    公开(公告)号:US10565277B2

    公开(公告)日:2020-02-18

    申请号:US16419425

    申请日:2019-05-22

    Abstract: A method and system for improving a network search query is provided. The method includes receiving a natural language Internet search request and executing a real time search with respect to a database associated with an Internet based search for specified digital information. Categories associated with the natural language Internet search request are identified and associated intent information is received. Digital attributes data identified during the real time search are identified and an associated concept is extracted. The associated concept is mapped to the digital attributes and search based software code is generated and executed. Resulting relevant results are presented and the database is configured such that the relevant results are stored within a logical partition of the database.

    Network search query
    42.
    发明授权

    公开(公告)号:US10387515B2

    公开(公告)日:2019-08-20

    申请号:US15617457

    申请日:2017-06-08

    Abstract: A method and system for improving a network search query is provided. The method includes executing a real time search with respect to a database associated with an Internet based search for specified digital information. Digital attributes of digital data identified during the real time search are identified and keywords associated with the digital attributes are ranked. In response, search based software code associated with an Internet search for the digital information is generated and associated real time user interactions are recorded. The search based software code is modified resulting in generation of modified search based software code. The modified search based software code is executed and relevant results associated with the Internet based search are presented via a GUI. The database is configured such that the modified search is stored within a logical partition of the database.

    System and method for creating a preference profile from shared images

    公开(公告)号:US10169371B2

    公开(公告)日:2019-01-01

    申请号:US15841485

    申请日:2017-12-14

    Abstract: A method includes obtaining from an online social media site a plurality of instances of images of objects associated with a person; analyzing with a data processor the plurality of instances of the images with a plurality of predetermined style classifiers to obtain a score for each image for each style classifier; and determining with the data processor, based on the obtained scores, a likely preference of the person for a particular style of object. The plurality of instances of images of objects associated with the person can be images that were posted, shared or pinned by person, and images that the person expressed a preference for. In a non-limiting embodiment the object is clothing, and the style can include a fashion style or fashion genre including color preferences. A system and a computer program product to perform the method are also disclosed.

    SELF-ALIGNED CONTACTS FOR HIGH k/METAL GATE PROCESS FLOW
    49.
    发明申请
    SELF-ALIGNED CONTACTS FOR HIGH k/METAL GATE PROCESS FLOW 有权
    用于高k /金属栅工艺流程的自对准接触

    公开(公告)号:US20130189834A1

    公开(公告)日:2013-07-25

    申请号:US13791520

    申请日:2013-03-08

    Abstract: A semiconductor structure is provided that includes a semiconductor substrate having a plurality of gate stacks located thereon. Each gate stack includes a high k gate dielectric layer, a work function metal layer and a conductive metal. A spacer is located on sidewalls of each gate stack and a self-aligned dielectric liner is present on an upper surface of each spacer. A bottom surface of each self-aligned dielectric liner is present on an upper surface of a semiconductor metal alloy. A contact metal is located between neighboring gate stacks and is separated from each gate stack by the self-aligned dielectric liner. The structure also includes another contact metal having a portion that is located on and in direct contact with an upper surface of the contact metal and another portion that is located on and in direct contact with the conductive metal of one of the gate stacks.

    Abstract translation: 提供一种半导体结构,其包括具有位于其上的多个栅极叠层的半导体衬底。 每个栅极堆叠包括高k栅介质层,功函数金属层和导电金属。 间隔件位于每个栅极堆叠的侧壁上,并且自对准电介质衬垫存在于每个间隔件的上表面上。 每个自对准电介质衬垫的底表面存在于半导体金属合金的上表面上。 接触金属位于相邻的栅极堆叠之间,并通过自对准电介质衬垫与每个栅极堆叠分离。 该结构还包括另一个接触金属,其具有位于接触金属的上表面上且与触头金属的上表面直接接触的部分,以及位于与其中一个栅极叠层的导电金属直接接触的另一部分。

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