Transfer roller cleaning apparatus of liquid electrophotographic printer
    42.
    发明授权
    Transfer roller cleaning apparatus of liquid electrophotographic printer 失效
    液体电子照相打印机转印辊清洗装置

    公开(公告)号:US06201940B1

    公开(公告)日:2001-03-13

    申请号:US09248123

    申请日:1999-02-11

    Applicant: Chang-soo Lee

    Inventor: Chang-soo Lee

    CPC classification number: G03G15/161 G03G2215/1652

    Abstract: A transfer roller cleaning apparatus of a liquid electrophotographic printer for removing toner particles and foreign matter remaining on a transfer roller for transferring a toner image formed on a photoreceptor belt. The transfer roller includes a cleaning roller for cleaning the surface of the transfer roller while rotating in contact with a transfer surface of the transfer roller.

    Abstract translation: 用于去除调色剂颗粒的液体电子照相打印机的转印辊清洁装置和残留在转印辊上的异物,用于转印形成在感光带上的调色剂图像。 转印辊包括清洁辊,用于在转印辊与转印辊的转印表面接触的同时清洁转印辊的表面。

    Display apparatus and displaying method of contents
    43.
    发明授权
    Display apparatus and displaying method of contents 有权
    显示装置和内容的显示方法

    公开(公告)号:US09009141B2

    公开(公告)日:2015-04-14

    申请号:US13110145

    申请日:2011-05-18

    CPC classification number: G06F17/30265 G06F17/30241

    Abstract: A display apparatus and a displaying method of contents, the display apparatus including a content output unit which outputs contents, a display unit which displays predetermined space information, a user interface (UI) generating unit which generates UI information, a user input unit, and a control unit which classifies the contents into a group which corresponds to a position on the displayed predetermined space information based on predetermined position information of the contents in response to a request to search for contents, being input through the user input unit, controls the UI generating unit to generate a first UI indicating the group, and controls the display unit to display the generated first UI at the corresponding position of the group on the displayed predetermined space information.

    Abstract translation: 一种显示装置和内容的显示方法,所述显示装置包括输出内容的内容输出单元,显示预定空间信息的显示单元,生成UI信息的用户界面(UI)生成单元,用户输入单元,以及 控制单元,根据通过用户输入单元输入的搜索内容的请求,基于内容的预定位置信息,将内容分类为与所显示的预定空间信息上的位置相对应的组,控制UI 生成单元,生成指示该组的第一UI,并且控制显示单元在所显示的预定空间信息上显示在该组的相应位置处生成的第一UI。

    Method of growing silicon and method of manufacturing solar cell using the same
    47.
    发明授权
    Method of growing silicon and method of manufacturing solar cell using the same 有权
    生长硅的方法及使用其制造太阳能电池的方法

    公开(公告)号:US08003546B2

    公开(公告)日:2011-08-23

    申请号:US12461502

    申请日:2009-08-13

    Abstract: In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.

    Abstract translation: 在使用反应器生长硅(Si)的方法中,包括硅Si源和氢的超临界流体在反应器中流动,并且Si源与氢反应。 太阳能电池的基底可以由使用生长硅(Si)的方法制成的Si形成。 超临界流体可以是其中Si不被氧化的流体,并且可以是例如具有约60至约200atm压力的CO 2超临界流体。 Si源可以是三氯硅烷(TCS)(SiCl 3 H)或SiH 4。

    Thin film etching method
    48.
    发明授权
    Thin film etching method 有权
    薄膜蚀刻法

    公开(公告)号:US07935641B2

    公开(公告)日:2011-05-03

    申请号:US11984760

    申请日:2007-11-21

    CPC classification number: H01L29/7869

    Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

    Abstract translation: 示例性方法可以提供薄膜蚀刻方法。 示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜,形成覆盖Ga-In-Zn-O膜的一部分的掩模层,并且蚀刻Ga-In-Zn-O膜 使用掩模层作为蚀刻阻挡层,其中在蚀刻中使用的蚀刻气体包括氯。 蚀刻气体还可以包括烷烃(C n H 2n + 2)和H 2气体。 氯气可以是例如Cl 2,BCl 3和/或CCl 3,并且烷烃气体可以是例如CH 4。

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