Abstract:
An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.
Abstract:
A transfer roller cleaning apparatus of a liquid electrophotographic printer for removing toner particles and foreign matter remaining on a transfer roller for transferring a toner image formed on a photoreceptor belt. The transfer roller includes a cleaning roller for cleaning the surface of the transfer roller while rotating in contact with a transfer surface of the transfer roller.
Abstract:
A display apparatus and a displaying method of contents, the display apparatus including a content output unit which outputs contents, a display unit which displays predetermined space information, a user interface (UI) generating unit which generates UI information, a user input unit, and a control unit which classifies the contents into a group which corresponds to a position on the displayed predetermined space information based on predetermined position information of the contents in response to a request to search for contents, being input through the user input unit, controls the UI generating unit to generate a first UI indicating the group, and controls the display unit to display the generated first UI at the corresponding position of the group on the displayed predetermined space information.
Abstract:
An image processing apparatus and image processing method are provided. The image processing apparatus includes a video processor which processes and displays an image; a receiver which receives a key signal of a color; and a controller which controls the video processor to display contents corresponding to the color when receiving the key signal of the color.
Abstract:
Provided are a remote controller and a method of controlling the remote controller, wherein the remote controller is operable to be in one of a first operating mode or a second operating mode, and which is connectable to a docking station, the remote controller including: an internal display screen, which displays at least one digital image; and a controller which may be operable to change between the first and second operating modes, wherein if the remote controller is connected to the docking station and if the remote controller is in the second operating mode, the controller controls the remote controller to change to the first operating mode to provide predetermined multimedia content.
Abstract:
Provided are a resistive random access memory device and a method of manufacturing the same. The resistive random access memory device includes a switching device and a storage node connected to the switching device, and the storage node includes a first electrode and a second electrode and a resistance change layer formed of Cu2-XO between the first electrode and the second electrode.
Abstract:
In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.
Abstract:
Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.
Abstract translation:示例性方法可以提供薄膜蚀刻方法。 示例性薄膜蚀刻方法可以包括在衬底上形成Ga-In-Zn-O膜,形成覆盖Ga-In-Zn-O膜的一部分的掩模层,并且蚀刻Ga-In-Zn-O膜 使用掩模层作为蚀刻阻挡层,其中在蚀刻中使用的蚀刻气体包括氯。 蚀刻气体还可以包括烷烃(C n H 2n + 2)和H 2气体。 氯气可以是例如Cl 2,BCl 3和/或CCl 3,并且烷烃气体可以是例如CH 4。
Abstract:
Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.
Abstract:
A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.