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公开(公告)号：US20060267684A1
公开(公告)日：2006-11-30
申请号：US11439990
申请日：2006-05-25
摘要： A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.
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公开(公告)号：US07123087B2
公开(公告)日：2006-10-17
申请号：US11230467
申请日：2005-09-21
IPC分类号： H03F3/68
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
摘要翻译： 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M 12和第一级匹配网络M 13连接到功率放大器单元A11和功率放大器单元A12的相应输出节点，功率放大器单元A 11和功率放大器单元A 12通过切换操作，连接第一级匹配网络 在M12和M13的连接点与输出端子OUT，第一级匹配网络M 12，M 13以及最后一级匹配网络M12之间连接最后一级匹配网络M 11， 对于功率放大器单元A 11和A 12两者形成级匹配网络M 11，使得当一个单元在操作中另一个处于停止操作时在输出端子OUT和功率放大器单元之间建立阻抗匹配 。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。
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公开(公告)号：US20060157825A1
公开(公告)日：2006-07-20
申请号：US11376116
申请日：2006-03-16
申请人： Yasunari Umemoto , Hideyuki Ono , Tomonori Tanoue , Yasuo Ohsone , Isao Ohbu , Chushiro Kusano , Atsushi Kurokawa , Masao Yamane
发明人： Yasunari Umemoto , Hideyuki Ono , Tomonori Tanoue , Yasuo Ohsone , Isao Ohbu , Chushiro Kusano , Atsushi Kurokawa , Masao Yamane
IPC分类号： H01L27/082
CPC分类号： H01L27/0825 , H01L27/0259 , H01L29/7371 , H01L2224/48091 , H01L2224/73265 , H03K17/08146 , H03K17/615 , H01L2924/00014
摘要： The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.
摘要翻译： 本发明旨在提高对半导体器件的破坏性。 具有连接在高输出的放大电路的输出（集电极和发射极）之间的达林顿的多个双极晶体管的保护电路与放大电路并联电连接。 放大电路具有彼此并联连接的多个单元HBT（异质结双极晶体管）。 保护电路具有包括具有多个双极型晶体管Q 1至Q 5的第一组保护电路和具有多个双极晶体管的第二组保护电路的两级配置。
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公开(公告)号：US07078975B2
公开(公告)日：2006-07-18
申请号：US11247185
申请日：2005-10-12
申请人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
发明人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
IPC分类号： H03G3/30
摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
摘要翻译： 本发明提供了一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。
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公开(公告)号：US20060066406A1
公开(公告)日：2006-03-30
申请号：US11209691
申请日：2005-08-24
申请人： Tomonori Tanoue , Masami Ohnishi
发明人： Tomonori Tanoue , Masami Ohnishi
IPC分类号： H03F3/04
CPC分类号： H03F1/26 , H01L2924/0002 , H03F1/42 , H03F3/04 , H03F3/195 , H03F2200/36 , H01L2924/00
摘要： The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about ⅔ times an input impedance of the amplification unit.
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公开(公告)号：US06958656B2
公开(公告)日：2005-10-25
申请号：US10878308
申请日：2004-06-29
申请人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
发明人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
摘要翻译： 本发明提供一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。
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公开(公告)号：US06771128B1
公开(公告)日：2004-08-03
申请号：US09692182
申请日：2000-10-20
申请人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
发明人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
IPC分类号： H03G330
摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
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48.发明授权High frequency power amplifier, high frequency power amplifier module, and portable telephone 有权高频功率放大器，高频功率放大器模块和便携式电话公开(公告)号：US06674323B2
公开(公告)日：2004-01-06
申请号：US10192589
申请日：2002-07-11
申请人： Osamu Kagaya , Masami Ohnishi , Kenji Sekine , Tomonori Tanoue
发明人： Osamu Kagaya , Masami Ohnishi , Kenji Sekine , Tomonori Tanoue
IPC分类号： H03F114
CPC分类号： H03F3/602 , H03F1/0277 , H03F1/302 , H03F1/56 , H03F3/195 , H03F3/245 , H03F3/72 , H03F2200/111 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/429 , H03F2200/555 , H03F2203/7206 , H03F2203/7215 , H03F2203/7221 , H03F2203/7231 , H03F2203/7236
摘要： To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than ¼ of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal.
摘要翻译： 为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由 放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。
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49.发明授权
公开(公告)号：US5949097A
公开(公告)日：1999-09-07
申请号：US932939
申请日：1997-09-17
IPC分类号： H01L21/331 , H01L21/768 , H01L27/06 , H01L29/737 , H01L29/04
CPC分类号： H01L29/66318 , H01L27/0605 , H01L29/7371
摘要： The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for semiconductor devices at large. In a semiconductor layer of a polycrystalline or amorphous undoped III-V compound semiconductor or an alloy thereof, a through hole is formed for contact. The size of the through hole is set to permit exposure of at least part of a first conductor layer and a dielectric layer, such as an Si compound, present around the first conductor layer, and a second conductor layer is formed within the through hole so as to contact the first conductor layer. Since the semiconductor layer can be subjected to a selective dry etching for the dielectric layer, the dielectric layer is not etched at the time of forming the above through hole in the semiconductor layer. As a result an electric short-circuit of the second conductor layer with a single crystal semiconductor layer which underlies the dielectric layer can be prevented.
摘要翻译： 本发明涉及不仅具有异质结双极晶体管或异质绝缘栅场效应晶体管的半导体器件的接触结构，而且还涉及用于半导体器件的半导体器件。 在多晶或非晶未掺杂的III-V族化合物半导体的半导体层或其合金中，形成用于接触的通孔。 通孔的尺寸被设定为允许暴露在第一导体层周围的第一导体层和诸如Si化合物的电介质层的至少一部分，并且在通孔内形成第二导体层，因此 以接触第一导体层。 由于可以对半导体层进行电介质层的选择性干蚀刻，所以在形成半导体层中的上述通孔时不会蚀刻电介质层。 结果，可以防止具有位于电介质层下面的单晶半导体层的第二导体层的电短路。
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50.发明授权
公开(公告)号：US5017517A
公开(公告)日：1991-05-21
申请号：US518035
申请日：1990-05-02
IPC分类号： H01L29/73 , H01L21/20 , H01L21/28 , H01L21/331 , H01L29/205 , H01L29/737 , H01L29/80
CPC分类号： H01L29/66318 , H01L21/02395 , H01L21/02463 , H01L21/02491 , H01L21/02546 , H01L21/02639 , H01L21/28 , Y10S148/005 , Y10S148/011 , Y10S148/026 , Y10S438/976
摘要： A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.
摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成第一半导体层，形成锑（Sb）的表面保护层或具有Sb的材料作为其主要成分，执行制造所需的其它步骤 半导体器件，去除表面保护层，并且在由此暴露的第一半导体层上形成第二半导体层。
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