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公开(公告)号：US10923408B2
公开(公告)日：2021-02-16
申请号：US16212471
申请日：2018-12-06
发明人： Shaowu Huang , Javier A. DeLaCruz , Liang Wang , Rajesh Katkar , Belgacem Haba
摘要： An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.
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公开(公告)号：US10896902B2
公开(公告)日：2021-01-19
申请号：US16599744
申请日：2019-10-11
IPC分类号： H01L25/00 , H01L21/67 , H01L21/683 , H01L21/78 , H01L21/66 , H01L25/10 , H01L25/075
摘要： Systems and methods for efficient transfer of elements are disclosed. A film which supports a plurality of diced integrated device dies can be provided. The plurality of diced integrated device dies can be disposed adjacent one another along a surface of the film. The film can be positioned adjacent the support structure such that the surface of the film faces a support surface of the support structure. The film can be selectively positioned laterally relative to the support structure such that a selected first die is aligned with a first location of the support structure. A force can be applied in a direction nonparallel to the surface of the film to cause the selected first die to be directly transferred from the film to the support structure.
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公开(公告)号：US20200371154A1
公开(公告)日：2020-11-26
申请号：US16881621
申请日：2020-05-22
发明人： Javier A. DeLaCruz , Belgacem Haba , Guy Regev
摘要： A bonded structure is disclosed. The bonded structure can include a first semiconductor element having a first front side and a first back side opposite the first front side. The bonded structure can include a second semiconductor element having a second front side and a second back side opposite the second front side, the first front side of the first semiconductor element directly bonded to the second front side of the second semiconductor element along a bond interface without an adhesive. The bonded structure can include security circuitry extending across the bond interface, the security circuitry electrically connected to the first and second semiconductor elements
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公开(公告)号：US20200013765A1
公开(公告)日：2020-01-09
申请号：US16459610
申请日：2019-07-02
摘要： Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.
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公开(公告)号：US20200013637A1
公开(公告)日：2020-01-09
申请号：US16503021
申请日：2019-07-03
发明人： Belgacem Haba
IPC分类号： H01L21/56 , H01L21/768 , H01L23/31 , H01L23/528 , H01L21/82
摘要： Various embodiments of fanout packages are disclosed. A method of forming a microelectronic assembly is disclosed. The method can include bonding a first surface of at least one microelectronic substrate to a surface of a carrier using a direct bonding technique without an intervening adhesive, the microelectronic substrate having a plurality of conductive interconnections on at least one surface of the microelectronic substrate. The method can include applying a molding material to an area of the surface of the carrier surrounding the microelectronic substrate to form a reconstituted substrate. The method can include processing the microelectronic substrate. The method can include singulating the reconstituted substrate at the area of the surface of the carrier and at the molding material to form the microelectronic assembly.
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公开(公告)号：US10515925B2
公开(公告)日：2019-12-24
申请号：US16282024
申请日：2019-02-21
发明人： Cyprian Emeka Uzoh
IPC分类号： H01L23/00 , H01L21/67 , H01L23/48 , H01L25/065 , H01L21/683 , H01L21/78 , H01L25/00
摘要： Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.
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公开(公告)号：US20190371761A1
公开(公告)日：2019-12-05
申请号：US16515588
申请日：2019-07-18
发明人： Cyprian Emeka UZOH
IPC分类号： H01L23/00 , H01L25/00 , H01L21/78 , H01L21/683 , H01L23/48 , H01L25/065 , H01L21/67
摘要： Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.
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公开(公告)号：US20190311911A1
公开(公告)日：2019-10-10
申请号：US16371402
申请日：2019-04-01
发明人： Jeremy Alfred THEIL
IPC分类号： H01L21/3105 , H01L21/02 , H01L21/311 , H01L23/00
摘要： Improved bonding surfaces for microelectronics are provided. An example method of protecting a dielectric surface for direct bonding during a microelectronics fabrication process includes overfilling cavities and trenches in the dielectric surface with a temporary filler that has an approximately equal chemical and mechanical resistance to a chemical-mechanical planarization (CMP) process as the dielectric bonding surface. The CMP process is applied to the temporary filler to flatten the temporary filler down to the dielectric bonding surface. The temporary filler is then removed with an etchant that is selective to the temporary filler, but nonreactive toward the dielectric surface and toward inner surfaces of the cavities and trenches in the dielectric bonding surface. Edges of the cavities remain sharp, which minimizes oxide artifacts, strengthens the direct bond, and reduces the bonding seam.
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公开(公告)号：US10434749B2
公开(公告)日：2019-10-08
申请号：US14474501
申请日：2014-09-02
发明人： Qin-Yi Tong
IPC分类号： B32B7/04 , B81C1/00 , H01L21/3105 , H01L21/762 , H01L23/00
摘要： A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.
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公开(公告)号：US20190293838A1
公开(公告)日：2019-09-26
申请号：US16176191
申请日：2018-10-31
发明人： Belgacem HABA , Rajesh KATKAR , Ilyas MOHAMMED
摘要： Direct-bonded lamination for improved image clarity in optical devices is provided. An example process planarizes and plasma-activates optical surfaces to be laminated together, then forms direct bonds between the two surfaces without an adhesive or adhesive layer. This process provides improved optics with higher image brightness, less light scattering, better resolution, and higher image fidelity. The direct bonds also provide a refractory interface tolerant of much higher temperatures than conventional optical adhesives. The example process can be used to produce many types of improved optical components, such as improved laminated lenses, mirrors, beam splitters, collimators, prism systems, optical conduits, and mirrored waveguides for smartglasses and head-up displays (HUDs), which provide better image quality and elimination of the dark visual lines that are apparent to a human viewer when conventional adhesives are used in conventional lamination.
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