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公开(公告)号：US09718098B2
公开(公告)日：2017-08-01
申请号：US15158968
申请日：2016-05-19
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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42.发明授权公开(公告)号：US09705518B2
公开(公告)日：2017-07-11
申请号：US14957418
申请日：2015-12-02
发明人： Kailiang Chen , Tyler S. Ralston
CPC分类号： H03M1/002 , A61B8/4483 , A61B8/4494 , A61B8/54 , H03M1/125 , H03M1/462
摘要： An ultrasound device including an asynchronous successive approximation analog-to-digital converter and method are provided. The device includes at least one ultrasonic transducer, a plurality of asynchronous successive-approximation-register (SAR) analog-to-digital converters (ADC) coupled to the at least one ultrasonic transducer, at least one asynchronous SAR in the plurality having a sample and hold stage, a digital-to-analog converter (DAC), a comparator, and control circuitry, wherein a DAC update event following at least one bit conversion is synchronized to a corresponding DAC update event of at least one other ADC in the plurality of ADCs.
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公开(公告)号：US20170143306A1
公开(公告)日：2017-05-25
申请号：US15421854
申请日：2017-02-01
发明人： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston , Gregory L. Charvat , Gregory Corteville
CPC分类号： A61B8/4444 , A61B8/13 , A61B8/14 , A61B8/4411 , A61B8/4477 , A61B8/4483 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/54 , A61B8/56 , A61N7/02 , A61N2007/0078 , B06B1/0292 , G01S7/003 , G01S7/5208 , G01S7/52084 , G01S15/8915 , G03B27/423 , G03B27/52 , Y10T29/49005
摘要： Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.
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公开(公告)号：US09533873B2
公开(公告)日：2017-01-03
申请号：US14172840
申请日：2014-02-04
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
摘要翻译： 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。
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45.发明授权Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods 有权超声波换能器在互补金属氧化物半导体（CMOS）晶圆及相关设备和方法公开(公告)号：US09505030B2
公开(公告)日：2016-11-29
申请号：US14689119
申请日：2015-04-17
IPC分类号： B81B3/00 , B06B1/02 , B81B7/00 , B81C1/00 , H01L21/3213 , H01L21/56 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L23/528 , H01L27/06 , A61B8/00 , H01L27/092
CPC分类号： H01L27/0617 , A61B8/00 , A61B8/4494 , B06B1/02 , B06B1/0292 , B06B2201/51 , B81B3/0021 , B81B7/0006 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/32134 , H01L21/56 , H01L21/768 , H01L21/76838 , H01L21/823871 , H01L23/5226 , H01L23/528 , H01L27/0688 , H01L27/092 , H01L2224/16225
摘要： Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
摘要翻译： 还描述了形成在互补金属氧化物半导体（CMOS）晶片中的微加工超声换能器，以及制造这种器件的方法。 可以通过牺牲释放去除CMOS晶片的金属化层，以产生超声换能器的空腔。 剩余的层可以形成超声换能器的膜。
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公开(公告)号：US20160009549A1
公开(公告)日：2016-01-14
申请号：US14716152
申请日：2015-05-19
IPC分类号： B81C1/00
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US09198637B2
公开(公告)日：2015-12-01
申请号：US14191504
申请日：2014-02-27
IPC分类号： A61B8/00 , A61B8/14 , A61B8/08 , A61N7/00 , A61B17/32 , A61N7/02 , A61B5/01 , A61B8/13 , G01S7/52 , A61B19/00
CPC分类号： G01S7/52017 , A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B17/320068 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078 , G01S7/52019 , G01S7/52023
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
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公开(公告)号：US20150297193A1
公开(公告)日：2015-10-22
申请号：US14689080
申请日：2015-04-17
CPC分类号： A61B8/56 , A61B8/4483 , A61B8/4494 , A61B8/488 , A61B8/5207 , G01S7/52033 , G01S7/52034 , G01S7/5208 , G01S7/52085 , G01S15/8915
摘要： To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and an output data module may be used to move data for all received channels off-chip as a digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. The on-chip digitization of received signals also enables the on-chip integration of ultrasound processing and/or pre-processing to reduce the burden on off-chip computing. Data compression architectures are disclosed to facilitate the transfer of data off-chip as a digital data stream in accordance with the bandwidth requirements of standard commercially-available output interfaces.
摘要翻译： 为了实现单芯片超声成像解决方案，可以在接收信号路径中采用片上信号处理以减少数据带宽，并且输出数据模块可用于将作为数字数据流的片外所有接收信道的数据移动 。 片上接收信号的数字化允许在芯片上执行高级数字信号处理，从而允许整个超声波成像系统完全集成在单个半导体衬底上。 接收信号的片上数字化还使得超声处理和/或预处理的片上集成能够减少片外计算的负担。 公开了数据压缩架构，以便根据标准商业可用输出接口的带宽需求，促进作为数字数据流的片外数据传输。
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公开(公告)号：US20150247921A1
公开(公告)日：2015-09-03
申请号：US14711039
申请日：2015-05-13
CPC分类号： A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B2017/320069 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
摘要翻译： 描述了包括超声成像装置的装置和方法，其可以在透射超声成像模式中操作，并且其可以用于检测对象的感兴趣的属性，例如折射率，密度和/或声速。 还描述了适用于执行高强度聚焦超声（HIFU）的设备，以及HIFU和超声成像。
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50.发明授权Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same 有权互补金属氧化物半导体（CMOS）超声换能器及其形成方法公开(公告)号：US09061318B2
公开(公告)日：2015-06-23
申请号：US14561384
申请日：2014-12-05
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
摘要翻译： 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。
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