公开(公告)号：US20230228922A1

公开(公告)日：2023-07-20

申请号：US18118087

申请日：2023-03-06

申请人： Raytheon Company

发明人： Keith Carrigan

IPC分类号： G02B5/08 ,  C23C16/02 ,  C23C16/32 ,  G02B5/10

CPC分类号： G02B5/0808 ,  C23C16/0254 ,  C23C16/325 ,  G02B5/10 ,  B64G1/10

摘要： An aerospace mirror having a reaction bonded (RB) silicon carbide (SiC) mirror substrate, and a SiC cladding on the RB SiC mirror substrate forming an optical surface on a front side of the aerospace mirror. A method for manufacturing an aerospace mirror comprising obtaining a green mirror preform comprising porous carbon, silicon carbide (SiC), or both, the green mirror preform defining a front side of the aerospace mirror and a back side of the aerospace mirror opposite the front side; removing material from the green mirror preform to form support ribs on the back side; infiltrating the green mirror preform with silicon to create a reaction bonded (RB) SiC mirror substrate from the green mirror preform; forming a mounting interface surface on the back side of the aerospace mirror from the RB SiC mirror substrate, and forming a reflector surface of the RB SiC mirror substrate on the front side of the aerospace mirror. Additionally, the method can comprise cladding the reflector surface of the RB SiC mirror substrate with SiC to form an optical surface of the aerospace mirror.

公开(公告)号：US20230220542A1

公开(公告)日：2023-07-13

申请号：US18125052

申请日：2023-03-22

申请人： AGILENT TECHNOLOGIES, INC.

发明人： Elizabeth CARR ,  Karen L. SEAWARD ,  Kevin P. KILLEEN

IPC分类号： C23C16/24 ,  C23C16/44 ,  C23C16/04 ,  C23C16/40 ,  C23C16/32 ,  B01D15/22 ,  C23C16/455

CPC分类号： C23C16/24 ,  B01D15/22 ,  C23C16/44 ,  C23C16/045 ,  C23C16/325 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45555 ,  Y10T428/13

摘要： The invention provides metal liquid chromatography components with uniformly coated internal surfaces and methods for achieving the same. The invention addresses the problem of corrosion or interference of metal components in the flow path for LC analyses in which the sample interacts with metal ions or surfaces. The invention also alleviates the difficulties in coating very long metal tubes and very small metal channels with an inert, continuous coating that adheres well to metal surfaces. The metal flow path is rendered inert by the coating, and thus compatible with bioanalytical separations, for example, by using a vapor phase deposition process to coat the inner surfaces with a coating that continuously covers all metal surfaces in the flow path.

公开(公告)号：US11692283B2

公开(公告)日：2023-07-04

申请号：US17009533

申请日：2020-09-01

申请人： STMICROELECTRONICS S.r.l.

发明人： Ruggero Anzalone ,  Nicolo′ Frazzetto ,  Francesco La Via

IPC分类号： C30B25/12 ,  H01L21/687 ,  H01L21/02 ,  C23C16/32 ,  C23C16/458 ,  C30B29/36 ,  H01L21/67 ,  C23C16/46 ,  C30B25/08

CPC分类号： C30B25/12 ,  C23C16/325 ,  C23C16/4583 ,  C30B29/36 ,  C23C16/4585 ,  C23C16/46 ,  C30B25/08 ,  H01L21/0262 ,  H01L21/02529 ,  H01L21/67011 ,  H01L21/6875 ,  H01L21/68785

摘要： An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

公开(公告)号：US11692267B2

公开(公告)日：2023-07-04

申请号：US17139211

申请日：2020-12-31

申请人： Applied Materials, Inc.

发明人： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC分类号： C23C16/32 ,  C23C16/455 ,  H01L21/687 ,  C23C16/458

CPC分类号： C23C16/45536 ,  C23C16/325 ,  C23C16/4582 ,  C23C16/45544 ,  H01L21/68757

摘要： Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

公开(公告)号：US11692266B2

公开(公告)日：2023-07-04

申请号：US16717326

申请日：2019-12-17

申请人： SHOWA DENKO K.K.

发明人： Yoshikazu Umeta ,  Yoshishige Okuno ,  Rimpei Kindaichi

IPC分类号： C23C16/455 ,  C30B25/14 ,  C30B25/12 ,  H01L21/02 ,  C23C16/32 ,  C23C16/46 ,  C30B29/36 ,  H01L21/205

CPC分类号： C23C16/455 ,  C23C16/325 ,  C23C16/46 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/205

摘要： Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.

公开(公告)号：US20230197435A1

公开(公告)日：2023-06-22

申请号：US17907517

申请日：2021-01-12

申请人： Soitec

发明人： Hugo Biard

IPC分类号： H01L21/02 ,  C30B1/02 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/32 ,  C23C16/01

CPC分类号： H01L21/02002 ,  H01L21/02079 ,  C30B1/023 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/325 ,  C23C16/01

摘要： A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline silicon carbide, b) a step of ion implantation of light species into the donor substrate, to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free surface of the donor substrate, c) a succession of n steps of forming crystalline carrier layers, with n greater than or equal to 2; the n crystalline carrier layers being positioned on the front face of the donor substrate successively one on the other, and forming the carrier substrate; each formation step comprising: direct liquid injection chemical vapor deposition, at a temperature below 900° C., to form a carrier layer, the carrier layer being formed by an at least partially amorphous SiC matrix, and having a thickness of less than or equal to 200 microns; a crystallization heat treatment of the carrier layer, at a temperature of less than or equal to 1000° C., to form a crystalline carrier layer; d) a step of separation along the buried brittle plane, to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the rest of the donor substrate.

公开(公告)号：US11680315B2

公开(公告)日：2023-06-20

申请号：US17704585

申请日：2022-03-25

申请人： Novellus Systems, Inc.

发明人： Bhadri N. Varadarajan

IPC分类号： C23C16/452 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/325 ,  C23C16/452 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274

摘要： Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.

公开(公告)号：US11674222B2

公开(公告)日：2023-06-13

申请号：US17036865

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Sarah Michelle Bobek ,  Abdul Aziz Khaja ,  Ratsamee Limdulpaiboon ,  Kwangduk Douglas Lee

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/32 ,  H01L21/033

CPC分类号： C23C16/4404 ,  C23C16/325 ,  H01L21/0337

摘要： The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

公开(公告)号：US11658060B2

公开(公告)日：2023-05-23

申请号：US17604533

申请日：2020-03-25

申请人： TOKAI CARBON KOREA CO., LTD

发明人： Sang Chul Lee

IPC分类号： C23C16/32 ,  H01L21/687 ,  B01J20/32 ,  B82B3/00 ,  H01J37/32 ,  C23C16/44 ,  H01L21/02 ,  C30B23/06 ,  C30B29/36 ,  H01L21/324

CPC分类号： H01L21/68757 ,  B01J20/3202 ,  B82B3/0033 ,  C23C16/325 ,  C23C16/44 ,  C30B23/06 ,  C30B29/36 ,  H01J37/32724 ,  H01L21/02167 ,  H01L21/02529 ,  H01L21/324

摘要： Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and (111) plane preferential growth according to X-ray diffraction analysis.

公开(公告)号：US11642724B2

公开(公告)日：2023-05-09

申请号：US15772219

申请日：2016-11-03

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Alexandre Allemand ,  Alain Largeteau ,  Seu U-Chan Chung ,  Yann Le Petitcorps ,  Jérôme Roger

IPC分类号： B22F3/105 ,  C04B35/111 ,  C23C16/32 ,  C04B35/01 ,  C04B35/46 ,  C04B35/468 ,  B28B3/02 ,  B22F3/11 ,  C04B35/115 ,  C04B35/457 ,  C04B35/486 ,  C04B35/645 ,  H05B3/60

CPC分类号： B22F3/105 ,  B22F3/11 ,  B28B3/025 ,  C04B35/016 ,  C04B35/111 ,  C04B35/115 ,  C04B35/457 ,  C04B35/46 ,  C04B35/4682 ,  C04B35/486 ,  C04B35/645 ,  C23C16/32 ,  C23C16/325 ,  H05B3/60 ,  B22F2003/1051 ,  B22F2999/00 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/6583 ,  C04B2235/6585 ,  C04B2235/666 ,  B22F2999/00 ,  B22F3/105 ,  B22F3/003

摘要： A die or piston of a spark plasma sintering apparatus, wherein the die or piston is made from graphite and the outer surfaces of the die or piston are coated with a silicon carbide layer with a thickness of 1 to 10 micrometres, the silicon carbide layer being further optionally coated with one or more other layer(s) made from a carbide other than silicon carbide chosen from hafnium carbide, tantalum carbide and titanium carbide, the other layer(s) each having a thickness of 1 to 10 micrometres. A spark plasma sintering (SPS) apparatus comprising the die and two of the pistons, defining a sintering, densification or assembly chamber capable of receiving a powder to be sintered, a part to be densified, or parts to be assembled. A method of sintering a powder, densifying a part, or assembling two parts by means of a method of spark plasma sintering (SPS) in an oxidising atmosphere, using the spark plasma sintering (SPS) apparatus.