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    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATE, CLEANING METHOD USING THE CLEANING AGENT, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
    31.
    发明申请
    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATE, CLEANING METHOD USING THE CLEANING AGENT, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 有权
    用于半导体基板的清洁剂，使用清洁剂的清洁方法和用于生产半导体元件的方法

    公开(公告)号：US20120073610A1

    公开(公告)日：2012-03-29

    申请号：US13245096

    申请日：2011-09-26

    申请人： Tetsuya KAMIMURA

    发明人： Tetsuya KAMIMURA

    IPC分类号： B08B3/00 ,  C11D7/60

    CPC分类号： H01L21/31133 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/02071

    摘要： A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination.

    摘要翻译： 能够施加与SPM清洗剂相当的清洗能力的半导体基板用清洗剂，大大提高了SPM清洗剂对半导体基板的损伤，有效地剥离和去除附着在半导体表面上的杂质 衬底，特别附着的物质，例如离子注入的抗蚀剂，使用该清洁剂的清洁方法，以及制造半导体元件的方法。 用于半导体衬底的清洁剂包括硫酸，过氧化氢和碳酸亚烷基酯。 清洗半导体衬底的方法包括用硫酸，过氧化氢和碳酸亚烷基酯组合清洗半导体衬底。

    Compositions for dissolution of low-k dielectric films, and methods of use
    32.
    发明授权
    Compositions for dissolution of low-k dielectric films, and methods of use 有权
    用于溶解低k电介质膜的组合物及其使用方法

    公开(公告)号：US08142673B2

    公开(公告)日：2012-03-27

    申请号：US10889597

    申请日：2004-07-12

    申请人： Donald L Yates

    发明人： Donald L Yates

    IPC分类号： H01L21/461

    CPC分类号： C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

    摘要： An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

    摘要翻译： 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k介电材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

    Substrate processing apparatus and substrate processing method
    33.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US08038799B2

    公开(公告)日：2011-10-18

    申请号：US12440400

    申请日：2007-09-05

    申请人： Tatsuo Nagai ,  Hiroshi Morita ,  Hiroaki Takahashi ,  Hiroaki Uchida ,  Toyohide Hayashi

    发明人： Tatsuo Nagai ,  Hiroshi Morita ,  Hiroaki Takahashi ,  Hiroaki Uchida ,  Toyohide Hayashi

    IPC分类号： C23G1/02

    CPC分类号： G03F7/423 ,  H01L21/6708

    摘要： A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.

    摘要翻译： 提供了可以从衬底中令人满意地去除抗蚀剂的衬底处理设备和衬底处理方法，并且可以再循环用于除去抗蚀剂的处理溶液。 基板处理装置包括：保持基板的基板保持装置; 使用硫酸生成过氧硫酸的过氧硫酸生成装置; 将由过硫酸产生装置产生的过氧硫酸与比过硫酸产生装置中使用的硫酸更高和更高浓度的硫酸混合的混合装置; 以及排出装置将由所述基板保持装置保持的基板排出由所述混合装置混合的所述过硫酸和所述硫酸的混合溶液作为从所述基板除去抗蚀剂的处理溶液。

    PHOTORESIST REMOVING PROCESSOR AND METHODS
    34.
    发明申请
    PHOTORESIST REMOVING PROCESSOR AND METHODS 审中-公开
    光刻胶去除处理器和方法

    公开(公告)号：US20110217848A1

    公开(公告)日：2011-09-08

    申请号：US12717079

    申请日：2010-03-03

    申请人： Eric J. Bergman ,  Jerry Dustin Leonhard ,  Bryan Puch ,  Jason Rye

    发明人： Eric J. Bergman ,  Jerry Dustin Leonhard ,  Bryan Puch ,  Jason Rye

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31133 ,  G03F7/42 ,  G03F7/423 ,  H01L21/67115 ,  H01L21/6719

    摘要： A processing chamber successfully removes hardened photoresist via direct infrared radiation onto the wafer, in the presence of an acid such as sulfuric acid, optionally along with an oxidizer such as hydrogen peroxide. The processing chamber includes a fixture for holding and optionally rotating the wafer. An infrared irradiating assembly has infrared lamps outside of the processing chamber positioned to radiate infrared light into the processing chamber. The infrared lamps may be arranged to irradiate substantially the entire surface of a wafer on the rotor. A cooling assembly can be associated with the infrared radiating assembly to provide a quick cool down and avoid over-processing. Photoresist is removed using small amounts of chemical solutions.

    摘要翻译： 处理室在酸例如硫酸存在下，任选地与氧化剂如过氧化氢成功地将硬化的光致抗蚀剂通过直接红外辐射除去到晶片上。 处理室包括用于保持和任选地旋转晶片的固定装置。 红外辐射组件具有位于处理室外面的红外灯，其被定位成将红外光辐射到处理室中。 红外灯可以被布置成基本上照射转子上的晶片的整个表面。 冷却组件可以与红外辐射组件相关联以提供快速冷却并避免过度处理。 使用少量化学溶液除去光刻胶。

    Composition for cleaning semiconductor device
    36.
    发明授权
    Composition for cleaning semiconductor device 失效
    用于清洁半导体器件的组合物

    公开(公告)号：US07947638B2

    公开(公告)日：2011-05-24

    申请号：US12216212

    申请日：2008-07-01

    申请人： Atsushi Tamura ,  Yasuhiro Doi

    发明人： Atsushi Tamura ,  Yasuhiro Doi

    IPC分类号： H01L21/02

    CPC分类号： G03F7/423 ,  C11D3/042 ,  C11D3/2082 ,  C11D3/361 ,  C11D7/08 ,  C11D7/265 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/02071

    摘要： A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protective film-forming test; a semiconductor device comprising a protective film containing a sulfur atom on a surface of an aluminum wire, wherein sulfur atom is contained within a region of at least 5 nm in its thickness direction from the surface of the protective film; and method for manufacturing a semiconductor device, comprising the step of contacting an aluminum wire of the semiconductor device with the sulfur-containing detergent composition as defined above, thereby forming a sulfur-containing protective film on the surface of the aluminum wire. The semiconductor device can be suitably used in the manufacture of electronic parts such as LCD, memory and CPU. Especially, the semiconductor device is suitably used in the manufacture of a highly integrated semiconductor with advanced scale-down.

    摘要翻译： 一种用于清洗具有铝线的半导体器件的含硫洗涤剂组合物，其中所述含硫洗涤剂组合物能够在保护膜形成试验中在铝膜的表面上形成含有硫原子的保护膜; 包含在铝线表面含有硫原子的保护膜的半导体器件，其中硫原子包含在距保护膜表面厚度方向至少5nm的区域内; 以及半导体装置的制造方法，其特征在于，包括使所述半导体装置的铝线与如上所述的含硫洗涤剂组合物接触的步骤，从而在所述铝线的表面上形成含硫保护膜。 半导体器件可以适用于LCD，存储器和CPU等电子零件的制造。 特别地，半导体器件适用于制造具有先进的缩小的高度集成的半导体。

    Two-Phase Substrate Cleaning Material
    38.
    发明申请
    Two-Phase Substrate Cleaning Material 失效
    两相基材清洗材料

    公开(公告)号：US20100317556A1

    公开(公告)日：2010-12-16

    申请号：US12862072

    申请日：2010-08-24

    申请人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    发明人： Mikhail Korolik ,  Erik M. Freer ,  John M. de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

    IPC分类号： C11D3/43

    CPC分类号： C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

    摘要： A cleaning compound is disclosed for removing particulate contaminants from a semiconductor substrate surface. The cleaning compound includes a liquid and carboxylic acid solid components dispersed in a substantially uniform manner in the liquid. A concentration of the carboxylic acid solid components in the liquid exceeds a solubility limit of the carboxylic acid solid components in the liquid. In one embodiment, a concentration of the carboxylic acid solid components in the liquid is within a range extending from about 3 percent by weight to about 5 percent by weight. In one embodiment, the carboxylic acid solid components are defined by a carbon number of at least four. The carboxylic acid solid components are defined to interact with the particulate contaminants on the semiconductor substrate surface to remove the particulate contaminants from the semiconductor substrate surface. The cleaning compound is viscous and may be formed as a gel.

    摘要翻译： 公开了用于从半导体衬底表面去除微粒污染物的清洁化合物。 清洁化合物包括以基本均匀的方式分散在液体中的液体和羧酸固体组分。 液体中羧酸固体组分的浓度超过了液体中羧酸固体组分的溶解度极限。 在一个实施方案中，液体中羧酸固体组分的浓度在约3重量％至约5重量％的范围内。 在一个实施方案中，羧酸固体组分由至少四个的碳数定义。 羧酸固体组分被定义为与半导体衬底表面上的颗粒污染物相互作用以从半导体衬底表面去除颗粒污染物。 清洁化合物是粘稠的并且可以形成为凝胶。