公开(公告)号：US07642157B2

公开(公告)日：2010-01-05

申请号：US11510949

申请日：2006-08-28

Applicant: Donald L Yates ,  Garry A Mercaldi

Inventor： Donald L Yates ,  Garry A Mercaldi

IPC: H01L21/8242

CPC classification number: H01L27/1085 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/82 ,  H01L28/84 ,  H01L28/91

Abstract: Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a method of forming the lower electrode, the texturizing layer is formed by depositing a polymeric material comprising a hydrocarbon block and a silicon-containing block, over the insulative layer of a container, and then subsequently converting the polymeric film to relief or porous nanostructures by exposure to UV radiation and ozone, resulting in a textured porous or relief silicon oxycarbide film. A conductive material is then deposited over the texturizing layer resulting in a lower electrode have an upper roughened surface. In another embodiment of a method of forming the lower electrode, the texturizing underlayer is formed by depositing overlying first and second conductive metal layers and annealing the metal layers to form surface dislocations, preferably structured as a periodic network. A conductive metal is then deposited in gaseous phase, and agglomerates onto the surface dislocations of the texturizing layer, forming nanostructures in the form of island clusters. The capacitor is completed by depositing a dielectric layer over the formed lower electrode, and forming an upper capacitor electrode over the dielectric layer. The capacitors are particularly useful in fabricating DRAM cells.

Abstract translation: 提供了形成半导体电路中的电容器的下电极的方法以及通过这些方法形成的电容器。 下电极通过形成纹理化的底层然后在其上沉积导电材料来制造。 在形成下电极的方法的一个实施方案中，通过在容器的绝缘层上沉积包含烃嵌段和含硅嵌段的聚合材料，然后随后将聚合物膜转化为浮雕而形成该组织化层 或通过暴露于UV辐射和臭氧的多孔纳米结构，导致织构化的多孔或缓蚀硅碳化硅膜。 然后将导电材料沉积在纹理化层上，导致下部电极具有上部粗糙表面。 在形成下电极的方法的另一实施例中，通过沉积覆盖的第一和第二导电金属层并退火金属层形成优选构造为周期性网络的表面位错来形成纹理化下层。 然后将导电金属沉积在气相中，并且聚集到构造层的表面位错上，形成岛簇形式的纳米结构。 电容器通过在形成的下电极上沉积介电层并在电介质层上形成上电容器电极来完成。 电容器在制造DRAM单元时特别有用。

公开(公告)号：US07432214B2

公开(公告)日：2008-10-07

申请号：US10889280

申请日：2004-07-12

Applicant: Donald L Yates

Inventor： Donald L Yates

IPC: H01L21/302

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

公开(公告)号：US07399424B2

公开(公告)日：2008-07-15

申请号：US10100319

申请日：2002-03-07

Applicant: Donald L Yates

Inventor： Donald L Yates

IPC: C09K13/00 ,  C09K13/06 ,  H01L21/302

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k电介质材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

公开(公告)号：US07148555B2

公开(公告)日：2006-12-12

申请号：US10408358

申请日：2003-04-07

Applicant: Donald L Yates ,  Garry A Mercaldi ,  James J Hofmann

Inventor： Donald L Yates ,  Garry A Mercaldi ,  James J Hofmann

IPC: H01L29/00

CPC classification number: H01L27/1085 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/82 ,  H01L28/84 ,  H01L28/91

Abstract: Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a method of forming the lower electrode, the texturizing layer is formed by depositing a polymeric material comprising a hydrocarbon block and a silicon-containing block, over the insulative layer of a container, and then subsequently converting the polymeric film to relief or porous nanostructures by exposure to UV radiation and ozone, resulting in a textured porous or relief silicon oxycarbide film. A conductive material is then deposited over the texturizing layer resulting in a lower electrode have an upper roughened surface. In another embodiment of a method of forming the lower electrode, the texturizing underlayer is formed by depositing overlying first and second conductive metal layers and annealing the metal layers to form surface dislocations, preferably structured as a periodic network. A conductive metal is then deposited in gaseous phase, and agglomerates onto the surface dislocations of the texturizing layer, forming nanostructures in the form of island clusters. The capacitor is completed by depositing a dielectric layer over the formed lower electrode, and forming an upper capacitor electrode over the dielectric layer. The capacitors are particularly useful in fabricating DRAM cells.

公开(公告)号：US08142673B2

公开(公告)日：2012-03-27

申请号：US10889597

申请日：2004-07-12

Applicant: Donald L Yates

Inventor： Donald L Yates

IPC: H01L21/461

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k介电材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

公开(公告)号：US07573121B2

公开(公告)日：2009-08-11

申请号：US11514694

申请日：2006-08-31

Applicant: Donald L Yates ,  Garry A Mercaldi ,  James J Hofmann

Inventor： Donald L Yates ,  Garry A Mercaldi ,  James J Hofmann

IPC: H01L29/94

CPC classification number: H01L27/1085 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/82 ,  H01L28/84 ,  H01L28/91

Abstract: Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a method of forming the lower electrode, the texturizing layer is formed by depositing a polymeric material comprising a hydrocarbon block and a silicon-containing block, over the insulative layer of a container, and then subsequently converting the polymeric film to relief or porous nanostructures by exposure to UV radiation and ozone, resulting in a textured porous or relief silicon oxycarbide film. A conductive material is then deposited over the texturizing layer resulting in a lower electrode have an upper roughened surface. In another embodiment of a method of forming the lower electrode, the texturizing underlayer is formed by depositing overlying first and second conductive metal layers and annealing the metal layers to form surface dislocations, preferably structured as a periodic network. A conductive metal is then deposited in gaseous phase, and agglomerates onto the surface dislocations of the texturizing layer, forming nanostructures in the form of island clusters. The capacitor is completed by depositing a dielectric layer over the formed lower electrode, and forming an upper capacitor electrode over the dielectric layer. The capacitors are particularly useful in fabricating DRAM cells.

Abstract translation: 提供了形成半导体电路中的电容器的下电极的方法以及通过这些方法形成的电容器。 下电极通过形成纹理化的底层然后在其上沉积导电材料来制造。 在形成下电极的方法的一个实施方案中，通过在容器的绝缘层上沉积包含烃嵌段和含硅嵌段的聚合材料，然后随后将聚合物膜转化为浮雕而形成该组织化层 或通过暴露于UV辐射和臭氧的多孔纳米结构，导致织构化的多孔或缓蚀硅碳化硅膜。 然后将导电材料沉积在纹理化层上，导致下部电极具有上部粗糙表面。 在形成下电极的方法的另一实施例中，通过沉积覆盖的第一和第二导电金属层并退火金属层形成优选构造为周期性网络的表面位错来形成纹理化下层。 然后将导电金属沉积在气相中，并且聚集到构造层的表面位错上，形成岛簇形式的纳米结构。 电容器通过在形成的下电极上沉积介电层并在电介质层上形成上电容器电极来完成。 电容器在制造DRAM单元时特别有用。

公开(公告)号：US07521373B2

公开(公告)日：2009-04-21

申请号：US10889084

申请日：2004-07-12

Applicant: Donald L Yates

Inventor： Donald L Yates

IPC: H01L21/302

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

公开(公告)号：US07312159B2

公开(公告)日：2007-12-25

申请号：US10889201

申请日：2004-07-12

Applicant: Donald L Yates

Inventor： Donald L Yates

IPC: H01L21/302

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k介电材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。