公开(公告)号：US20070111136A1

公开(公告)日：2007-05-17

申请号：US10569734

申请日：2004-08-25

申请人： Masahiro Miyasaka ,  Toshiki Ito

发明人： Masahiro Miyasaka ,  Toshiki Ito

IPC分类号： G03C1/00

CPC分类号： G03F7/027 ,  G03F7/42

摘要： The photosensitive resin composition of the invention comprises (A) a photopolymerizing compound with two or more ethylenic unsaturated bonds in the molecule and (B) a photopolymerization initiator which initiates photopolymerization reaction of the (A) photopolymerizing compound, the photosensitive resin composition being characterized in that the molecule of the (A) photopolymerizing compound further contains a characteristic group with a bond which breaks when the (A) photopolymerizing compound is heated under temperature conditions of 130-250° C.

摘要翻译： 本发明的感光性树脂组合物包含（A）分子中具有2个以上烯属不饱和键的光聚合性化合物和（B）引发（A）光聚合性化合物的光聚合反应的光聚合引发剂，其特征在于， 当（A）光聚合化合物的分子在130-250℃的温度条件下加热时，（A）光聚合化合物的分子还含有具有断裂的特征基团。

公开(公告)号：US20070079848A1

公开(公告)日：2007-04-12

申请号：US11336215

申请日：2006-01-20

申请人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker ,  Clint Thomas ,  John Parks

发明人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker ,  Clint Thomas ,  John Parks

IPC分类号： C23G1/00 ,  B08B7/00 ,  B08B7/04 ,  B08B3/00 ,  B08B3/12

CPC分类号： H01L21/02057 ,  B05D3/10 ,  B08B7/02 ,  C11D1/04 ,  C11D3/042 ,  C11D3/044 ,  C11D3/18 ,  C11D3/2079 ,  C11D3/222 ,  C11D3/225 ,  C11D3/3765 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0004 ,  C11D17/0013 ,  C11D17/0017 ,  C11D17/003 ,  C11D17/041 ,  C23G1/00 ,  C23G1/18 ,  G03F7/42 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086

摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.

摘要翻译： 清洁材料设置在基板上。 清洁材料包括分散在液体介质中的固体组分。 将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。 施加到固体组分的力可以通过液体介质中的不混溶组分施加。 当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。 然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

公开(公告)号：US20070066011A1

公开(公告)日：2007-03-22

申请号：US11602744

申请日：2006-11-20

申请人： Nishant Sinha

发明人： Nishant Sinha

IPC分类号： H01L21/8242 ,  G03G15/06 ,  G03G5/00

CPC分类号： H01L28/60 ,  G03F7/42 ,  G03F7/425 ,  H01L21/31058 ,  H01L21/3212 ,  H01L27/10855 ,  H01L28/40 ,  H01L28/55 ,  H01L28/91

摘要： The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

摘要翻译： 本发明包括形成电容器结构和去除有机材料的方法。 诸如光致抗蚀剂的有机材料设置在基底上。 将有机材料与化学机械抛光垫和抛光液接触以从基底去除有机材料。 抛光液可以基本上不含颗粒，并且可以是水。

公开(公告)号：US20070044817A1

公开(公告)日：2007-03-01

申请号：US11162146

申请日：2005-08-30

申请人： San-Lung Chen ,  Ying-Fang Chen ,  Kuo-Zhang Chu ,  Mei-Lun Tseng

发明人： San-Lung Chen ,  Ying-Fang Chen ,  Kuo-Zhang Chu ,  Mei-Lun Tseng

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B3/12

CPC分类号： C23F1/32 ,  B08B3/04 ,  G03F7/42

摘要： Semiconductor wafers have ashed photoresist residue and/or post-etch residue thereon to be cleaned through the chemical wet station, and a pattern of exposed metal layer. Post-etch residue removing solvent such as EKC-270 is fed into the solvent tank through a first solvent valve and first liquid feeding conduit that connected to bottom of the solvent tank. A circulation conduit connects the solvent tank with the first liquid feeding conduit for circulating the post-etch residue removing solvent. A liquid feeding pump is connected with the first liquid feeding conduit. A liquid drain conduit and a drain valve are connected with bottom of the solvent tank. Replacement solvent such as EKC-800 is fed into the solvent tank through a second solvent valve and second liquid feeding conduit.

摘要翻译： 半导体晶片将其上的光致抗蚀剂残留物和/或蚀刻后剩余物残留在化学湿站上，以及暴露的金属层的图案。 蚀刻后残留物除去溶剂如EKC-270通过连接到溶剂罐底部的第一溶剂阀和第一液体供给导管进入溶剂罐。 循环管道将溶剂罐与第一液体供给管道连接，以循环蚀刻后残留物去除溶剂。 液体供给泵与第一供液管连接。 液体排放管道和排水阀与溶剂罐的底部连接。 替代溶剂如EKC-800通过第二溶剂阀和第二液体供给导管进料到溶剂罐中。

公开(公告)号：US20060213534A1

公开(公告)日：2006-09-28

申请号：US11442824

申请日：2006-05-30

申请人： Woo Yoo

发明人： Woo Yoo

IPC分类号： B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/67115 ,  G03F7/42 ,  H01L21/31138

摘要： After ion implantation, thermal ashing is performed using ozone at a pressure of between about 0.01 to about 1000 Torr at below 1000° C. to remove the resist. Since the process includes a substantial amount of ozone, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. Using ozone allows fast resist removal with minimal residue at low temperatures.

摘要翻译： 在离子注入之后，在低于1000℃的约0.01至约1000托的压力下使用臭氧进行热灰化以除去抗蚀剂。 由于该方法包括大量臭氧，所以抗蚀剂可被完全氧化，因此不会留下残余物或其它污染物残留在基材上。 使用臭氧可以在低温下以极少的残留物快速去除抗蚀剂。

公开(公告)号：US20060138399A1

公开(公告)日：2006-06-29

申请号：US10525249

申请日：2003-08-21

申请人： Mitsushi Itano ,  Takashi Kanemura ,  Shingo Nakamura ,  Fumihiro Kamiya ,  Takehiko Kezuka

发明人： Mitsushi Itano ,  Takashi Kanemura ,  Shingo Nakamura ,  Fumihiro Kamiya ,  Takehiko Kezuka

IPC分类号： H01L29/08 ,  C11D11/00

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/24 ,  C11D7/263 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3263 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/42 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  G03F7/428 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76838 ,  H05K3/26

摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

摘要翻译： 本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洗溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。 本发明还提供一种通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

公开(公告)号：US20050045206A1

公开(公告)日：2005-03-03

申请号：US10647985

申请日：2003-08-26

申请人： Patricia Smith ,  Heungsoo Park ,  Eden Zielinski

发明人： Patricia Smith ,  Heungsoo Park ,  Eden Zielinski

IPC分类号： B08B7/00 ,  G03F7/40 ,  G03F7/42 ,  H01L21/311 ,  H01L21/316 ,  B08B3/04

CPC分类号： H01L21/76814 ,  B08B7/0035 ,  G03F7/40 ,  G03F7/42 ,  H01L21/31116 ,  H01L21/31695

摘要： Standard post-etch photoresist clean procedures for porous dielectric materials manufacturing may involve wet cleans in which a solvent is used for polymer residue removal. In many cases, the components of the solvent are absorbed into porous film layers and can later volatilize during subsequent metal deposition steps. A low pressure anneal of limited duration and high temperature, performed after the wet clean and prior to metal deposition, satisfactorily removes the absorbed components.

摘要翻译： 用于多孔介电材料制造的标准蚀刻后光致抗蚀剂清洁方法可涉及其中使用溶剂用于聚合物残渣除去的湿法清洗。 在许多情况下，溶剂的组分被吸收到多孔膜层中，并且随后在随后的金属沉积步骤中挥发。 在湿清洁之后和在金属沉积之前执行的有限持续时间和高温的低压退火令人满意地去除吸收的组分。

公开(公告)号：US06770426B1

公开(公告)日：2004-08-03

申请号：US09651702

申请日：2000-08-30

申请人： Brian A. Vaartstra

发明人： Brian A. Vaartstra

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/42 ,  H01L21/02101 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814

摘要： A method for removing organic material in the fabrication of structures includes providing a substrate assembly having an exposed organic material and removing at least a portion of the exposed organic material using a composition including sulfur trioxide (SO3) in a supercritical state. For example, the exposed organic material may be selected from the group of resist material, photoresist residue, UV-hardened resist, X-ray hardened resist, carbon-fluorine containing polymers, plasma etch residues, and organic impurities from other processes. Further, organic material removal compositions for performing such methods are provided.

摘要翻译： 在制造结构中除去有机材料的方法包括提供具有暴露的有机材料的基板组件，并且使用包含三氧化硫（SO 3）在超临界状态的组合物去除暴露的有机材料的至少一部分。 例如，暴露的有机材料可以选自抗蚀剂材料，光致抗蚀剂残留物，UV硬化抗蚀剂，X射线硬化抗蚀剂，含碳氟聚合物，等离子体蚀刻残余物和来自其它工艺的有机杂质。 此外，提供了用于执行这些方法的有机材料去除组合物。

公开(公告)号：US20040115957A1

公开(公告)日：2004-06-17

申请号：US10322408

申请日：2002-12-17

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Po-Jen Chen

IPC分类号： H01L021/302

CPC分类号： H01L21/02052 ,  G03F7/42 ,  H01L21/31133

摘要： An apparatus and method for enhancing uniformity in the spread of a process chemical such as a liquid strip chemical or solvent over the surface of a wafer to enhance contact of all areas of the wafer with the chemical, such as during the removal or stripping of photoresist from the wafer. The apparatus includes a wafer chuck having a heater for heating the wafer chuck and a wafer supported on the chuck. The wafer chuck and wafer are initially heated to a desired target temperature which is substantially the same as the temperature of the process chemical, after which the process chemical is dispensed onto the surface of the rotating wafer.

摘要翻译： 一种用于增强在晶片表面上的诸如液体条带化学品或溶剂的工艺化学品的扩散的均匀性的装置和方法，以增强晶片的所有区域与化学品的接触，例如在光刻胶的除去或剥离期间 从晶圆。 该装置包括具有用于加热晶片卡盘的加热器和支撑在卡盘上的晶片的晶片卡盘。 晶片卡盘和晶片最初被加热到与加工化学品的温度基本相同的所需目标温度，然后将工艺化学品分配到旋转晶片的表面上。

公开(公告)号：US06709876B2

公开(公告)日：2004-03-23

申请号：US10215226

申请日：2002-08-08

申请人： Veronika Polei ,  Martin Welzel

发明人： Veronika Polei ,  Martin Welzel

IPC分类号： H01L2100

CPC分类号： H01L22/26 ,  G03F7/42

摘要： In a method for removing an organic material from semiconductor devices, at least one semiconductor device is inserted into a so-called piranha bath. Measurement data are processed to get a data curve for measuring a concentration of at least one reaction product. The measurement data is queried for at least one of a turning point, a local maximum point or a local minimum point of the curve each being significantly different from signal noise after removing the semiconductor device from the fluid. With the information it is decided whether further processing of the semiconductor device is needed. The method is suitable for detecting an incomplete removal of organic material, i.e. photoresist deposited on the processed semiconductor device.

摘要翻译： 在从半导体器件中去除有机材料的方法中，至少一个半导体器件插入所谓的食人鱼浴中。 处理测量数据以获得用于测量至少一种反应产物浓度的数据曲线。 在将半导体器件从流体中除去之后，对于曲线的转折点，局部最大点或局部最小点中的至少一个与信号噪声显着不同，查询测量数据。 利用该信息，决定是否需要进一步处理半导体器件。 该方法适用于检测有机材料的不完全去除，即沉积在经处理的半导体器件上的光致抗蚀剂。