Abstract:
In a testing apparatus, an electronic equipment to be an equipment under test; EUT is exposed to an electric field by unit of an emission electrode, and an intensity of the electric field applied to the electronic equipment during a test is fluctuated by electric field fluctuating unit. Operating characteristics of the electronic equipment are tested by generating induction charging inside the electronic equipment by the fluctuation electric field during the test. As a result, it becomes possible to test malfunction caused by a discharge phenomenon generated inside the electronic equipment, which cannot be tested with a conventional ESD testing apparatus.
Abstract:
A method for determining test sets of operating parameter values for an electronic component, the method including: determining a first set of intermediate sets, each intermediate set containing a combination of a first number of operating parameters of the electronic component; determining a second set of reference sets, wherein the second set contains a union of sets, each set comprising all possible combinations of parameter values for the parameters of a respective intermediate set; selecting a third set with a second number of test sets out of a set of predefined sets, wherein each predefined set comprises a different combination of the parameter values for all parameters from the predefined parameter set, such that the second set is a subset of a union of a number of sets, each set comprising all possible combinations of the first number of parameter values for all parameters of a respective test set.
Abstract:
A jig for use in a semiconductor test includes: a base on which a probe pin and an insulating material are placed, the insulating material surrounding the probe pin in plan view; and a stage arranged to face a surface of the base on which the probe pin and the insulating material are placed. The stage is capable of holding a test object on a surface of the stage facing the base. When the base and the stage move in a direction in which they go closer to each other while the test object is placed on the stage, the probe pin comes into contact with an electrode formed on the test object and the insulating material comes into contact with the test object.
Abstract:
A method for determining power consumption of a power domain within an integrated circuit is presented. In a first step, a local power supply impedance profile (Z(f)) of this power domain is determined. Subsequently, a local time-resolved power supply voltage (U(t)) is measured while a well-defined periodic activity is executed in power domain. A set of time-domain measured voltage data (U(t)) is thus accumulated and transformed into the frequency domain to yield a voltage spectrum (U(f)). A current spectrum I(t) is calculated from this voltage profile (U(f)) by using the power supply impedance profile Z(f) of this power domain as I(t)=Ff−1{U(f)/Z(f)}. Finally, a time-resolved power consumption spectrum P(t) is determined from measured voltage spectrum U(t)) and calculated current spectrum (I(t)). This power consumption (P(t)) may be compared with a reference (Pref(t)) to verify whether power consumption within power domain matches expectations.
Abstract:
The invention relates to a tester apparatus of the kind including a portable supporting structure for removably holding and testing a substrate carrying a microelectronic circuit. An interface on the stationary structure is connected to the first interface when the portable structure is held by the stationary structure and is disconnected from the first interface when the portable supporting structure is removed from the stationary structure. An electrical tester is connected through the interfaces so that signals may be transmitted between the electrical tester and the microelectronic circuit to test the microelectronic circuit.
Abstract:
A method and apparatus for improving yield ratio of testing are disclosed. The method includes the following steps. First of all, devices are tested and electromagnetic interference is measured. Next, the test results are examined for whether the devices pass the test or not. Then, electromagnetic interference data are examined for whether the electromagnetic interference data are over a predetermined standard if the devices fail the test. The above-mentioned steps are performed again if the electromagnetic interference data are over a predetermined standard. The test is terminated if the devices still fail the test and the values of electromagnetic interference are still over a predetermined standard.
Abstract:
In one embodiment, an integrated circuit comprises at least one measurement unit configured to generate an output indicative of a supply voltage at which the integrated circuit is operable for a given operating frequency and a control unit coupled to receive the output. The control unit is configured to generate a voltage control output indicative of a requested supply voltage for the integrated circuit responsive to the output. The voltage control output may be output from the integrated circuit for use by circuitry external to the integrated circuit in generating the supply voltage for the integrated circuit.
Abstract:
In a semiconductor device including a semiconductor element to be protected having first and second electrodes, and a protection circuit coupled between the first and second electrodes, a switch circuit is inserted between the first and second electrodes in series to the protection circuit. The switch circuit is turned ON by such a voltage that turns ON the semiconductor element.
Abstract:
Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
Abstract:
A method for correcting of asymmetric shifts in threshold voltage of transistors caused by effects such as negative-bias temperature instability (NBTI) during burn-in. The method may include providing logic patterns to an integrated circuit, such that devices that were stressed during burn-in are relaxed, and devices that suffered less stress during burn-in are stressed.