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    End point detection for sputtering and resputtering
    31.
    发明授权
    End point detection for sputtering and resputtering 失效
    溅射和再溅射的终点检测

    公开(公告)号：US07048837B2

    公开(公告)日：2006-05-23

    申请号：US10659902

    申请日：2003-09-11

    申请人： Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

    发明人： Sasson R. Somekh ,  Marc O. Schweitzer ,  John C. Forster ,  Zheng Xu ,  Roderick C. Mosely ,  Barry L. Chin ,  Howard E. Grunes

    IPC分类号： C23C14/35

    CPC分类号： C23C14/544 ,  C23C14/046 ,  C23C14/165 ,  C23C14/5833 ,  C23C14/5873 ,  G01N21/68 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

    摘要翻译： 可以在溅射反应器系统中控制包括不透明金属导体材料的溅射材料层的等离子体蚀刻或再溅射。 在一个实施例中，溅射沉积层的溅射在材料溅射沉积之后进行，并且另外的材料被溅射沉积到衬底上。 位于系统的腔室内的路径将等离子体发射的光或其他辐射引导到腔室窗口或其他光学视图端口，其被屏蔽物保护以防止被导体材料沉积。 在一个实施例中，辐射路径被折叠以将等离子体光围绕室屏蔽件并且通过窗口反射到位于室窗口外部的检测器。 虽然沉积材料可以沉积在折叠辐射路径的部分上，但是在许多应用中，沉积材料将被充分反射，以允许发射光谱由光谱仪或其它合适的检测器检测，而没有显着的信号损失。 当检测器检测到已经到达下层或者当达到某些其它合适的处理点时，蚀刻或再溅射可以被终止。

    Deposition of a thin film on a substrate using a multi-beam source
    32.
    发明授权
    Deposition of a thin film on a substrate using a multi-beam source 失效
    使用多光束源在基板上沉积薄膜

    公开(公告)号：US6152074A

    公开(公告)日：2000-11-28

    申请号：US905166

    申请日：1997-08-01

    申请人： Marc O. Schweitzer ,  Barry L. Chin ,  Ivo J. Raaijmakers

    发明人： Marc O. Schweitzer ,  Barry L. Chin ,  Ivo J. Raaijmakers

    IPC分类号： C30B23/08 ,  C23C14/24 ,  C30B23/02 ,  C30B23/06 ,  H01L21/203 ,  C23C14/00

    CPC分类号： C23C14/24 ,  C23C14/243 ,  C30B23/02 ,  C30B23/066

    摘要： A multi-beam source for deposition of a material on to a substrate with enhanced deposition rate, uniformity and beam directionality. A plurality of orifices are provided in a head unit having a cavity containing a vapor of the deposition material. The cavity and the vapor contained therein are maintained at a high temperature to increase the deposition rate. The orifices are maintained at the same high temperature and act as heated collimators to produce highly directional beams for deposition of materials into high aspect ratio features. When used in jet vapor deposition techniques, an inert gas flow is introduced into the cavity and forced out thereof through the orifices as jets to transport particles of the deposition material to the substrate.

    摘要翻译： 一种用于将材料沉积到衬底上的多光束源，具有增强的沉积速率，均匀性和光束方向性。 在具有包含沉积材料的蒸气的空腔的头单元中设置多个孔。 其中容纳的空腔和蒸汽保持在高温以增加沉积速率。 孔保持在相同的高温，并作为加热准直仪，以产生高度定向的光束，用于将材料沉积到高纵横比特征中。 当用于喷射气相沉积技术时，将惰性气体流引入空腔中并将其通过孔口作为喷射流出，以将沉积材料的颗粒输送到基底。

    Gas-based substrate deposition protection
    33.
    发明授权
    Gas-based substrate deposition protection 失效
    用于在化学气相沉积工艺中防止膜在半导体晶片的边缘或背面上沉积的方法

    公开(公告)号：US5925411A

    公开(公告)日：1999-07-20

    申请号：US487789

    申请日：1995-06-07

    申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

    发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

    IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/31 ,  H01L21/683 ,  H01L21/687

    CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

    摘要： A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.

    摘要翻译： 在化学气相沉积（“CVD”）反应器中，在诸如钨，金属氮化物，其它金属和硅化物的材料沉积期间，压板支撑在内部压板区域上的衬底。 由合适的惰性气体如氩气或惰性气体和反应性气体如氩气和氢气的混合物组成的沉积控制气体被引入到CVD反应器中。 沉积控制气体优选通过围绕压板内部区域的气体孔口中的限制性开口引入并离开基板的边缘附近。 限制开口在靠近基板边缘的压力大于反应器压力的情况下，容纳靠近基板边缘的均匀沉积控制气流。 沉积控制气体基本上防止工艺气体进入衬底边缘和背面。 在一个实施例中，限制性开口通过将限制性插入物放置在围绕压板内部区域的气体槽中而形成。 在另一个实施方案中，限制性开口由与衬底的边缘基本上均匀间隔开的排除保护膜形成。

    Wafer surface protection in a gas deposition process
    36.
    发明授权
    Wafer surface protection in a gas deposition process 失效
    在气相沉积过程中晶圆表面保护

    公开(公告)号：US5578532A

    公开(公告)日：1996-11-26

    申请号：US294514

    申请日：1994-08-23

    申请人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

    发明人： Everhardus P. van de Ven ,  Eliot K. Broadbent ,  Jeffrey C. Benzing ,  Barry L. Chin ,  Christopher W. Burkhart

    IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23C14/04

    CPC分类号： C23C16/04 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

    摘要： A process comprising a platen having a substrate contact supporting a substrate during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard is positioned adjacent to the substrate contact and has an extension extending over a frontside peripheral region of the substrate. Deposition control gas is introduced through an opening beneath the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a substrate frontside peripheral region. The restrictive opening provides a uniform deposition control gas flow at a pressure greater than reactor ambient pressure and process gas pressure impinging on the frontside of the substrate. Deposition control gas flows uniformly through the restrictive opening across the entire substrate frontside peripheral region, thereby preventing deposition on the substrate edge and backside.

    摘要翻译： 一种方法，包括在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间具有支撑衬底的衬底接触的压板。 由合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物组成的沉积控制气体通过限制性开口引入反应器中的环境中。 排除保护件定位成与衬底接触相邻，并且具有在衬底的前侧周边区域上延伸的延伸部。 沉积控制气体通过排除保护延伸部下面的开口引入，并通过排除保护延伸部和衬底前侧周边区域之间的限制性开口离开。 限制开口提供均匀的沉积控制气流，其压力大于反应器环境压力和冲击衬底前侧的工艺气体压力。 沉积控制气体均匀地流过穿过整个基板前侧周边区域的限制开口，从而防止在基板边缘和背面上的沉积。

    Atomic layer deposition apparatus
    38.
    发明授权
    Atomic layer deposition apparatus 有权
    原子层沉积装置

    公开(公告)号：US08626330B2

    公开(公告)日：2014-01-07

    申请号：US13235855

    申请日：2011-09-19

    申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    IPC分类号： G06F19/00 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

    摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

    摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。