公开(公告)号：US10535675B2

公开(公告)日：2020-01-14

申请号：US16396937

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Wei Cheng Wu ,  Ya-Chen Kao ,  Yi Hsien Lu

IPC: H01L29/792 ,  H01L27/11573 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/088

Abstract: The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a HKMG (high-κ metal gate) integrated circuit which includes a high-voltage (HV) HKMG transistor. NVM devices (e.g., flash memory) are operated at high voltages for its read and write operations and hence a HV device is necessary for integrated circuits involving non-volatile embedded memory and HKMG logic circuits. Forming a HV HKMG circuit along with the HKMG periphery circuit reduces the need for additional boundaries between the HV transistor and rest of the periphery circuit. This method further helps reduce divot issue and reduce cell size.

公开(公告)号：US09735245B2

公开(公告)日：2017-08-15

申请号：US14481987

申请日：2014-09-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry Hak-Lay Chuang ,  Wei Cheng Wu ,  Shih-Chang Liu ,  Ya-Chen Kao

IPC: H01L29/423 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11573 ,  H01L29/78

CPC classification number: H01L29/42344 ,  H01L27/11573 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7833 ,  H01L29/792

Abstract: Some embodiments of the present disclosure provide an integrated circuit (IC) for an embedded flash memory device. The IC includes a flash memory cell having a memory cell gate. A silicide contact pad is arranged in a recess of the memory cell gate. A top surface of the silicide contact pad is recessed relative to a top surface of the memory cell gate. Dielectric side-wall spacers extend along sidewalls of the recess from the top surface of the memory cell gate to the top surface of the silicide contact pad.

公开(公告)号：US09276010B2

公开(公告)日：2016-03-01

申请号：US14296496

申请日：2014-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Wei Cheng Wu ,  Ya-Chen Kao ,  Fang-Lan Chu

IPC: H01L29/88 ,  H01L21/336 ,  H01L27/115 ,  H01L29/792 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L27/11573 ,  H01L21/28282 ,  H01L29/66484 ,  H01L29/665 ,  H01L29/66833 ,  H01L29/7831 ,  H01L29/792

Abstract: The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a high-K metal gate (HKMG) integrated circuit that utilizes a replacement gate technology with low poly resistance and high program/erase speed. A silicide layer formed over top surfaces of the NVM device, after replacement gate process of the HKMG circuit prevents poly damage during contact formation and provides low gate resistance, thereby improving program/erase speed of the NVM device.

Abstract translation: 本公开涉及一种将非易失性存储器（NVM）嵌入高K金属栅（HKMG）集成电路中的结构和方法，其利用具有低多电阻和高编程/擦除速度的替代栅极技术。 在HKMG电路的更换栅极处理之后，在NVM器件的顶表面上形成的硅化物层防止接触形成期间的多晶硅损伤并且提供低栅极电阻，从而提高NVM器件的编程/擦除速度。

公开(公告)号：US20150333082A1

公开(公告)日：2015-11-19

申请号：US14296496

申请日：2014-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Wei Cheng Wu ,  Ya-Chen Kao ,  Fang-Lan Chu

IPC: H01L27/115 ,  H01L29/78 ,  H01L29/66 ,  H01L29/792

CPC classification number: H01L27/11573 ,  H01L21/28282 ,  H01L29/66484 ,  H01L29/665 ,  H01L29/66833 ,  H01L29/7831 ,  H01L29/792

Abstract: The present disclosure relates to a structure and method for embedding a non-volatile memory (NVM) in a high-K metal gate (HKMG) integrated circuit that utilizes a replacement gate technology with low poly resistance and high program/erase speed. A silicide layer formed over top surfaces of the NVM device, after replacement gate process of the HKMG circuit prevents poly damage during contact formation and provides low gate resistance, thereby improving program/erase speed of the NVM device.

Abstract translation: 本公开涉及一种将非易失性存储器（NVM）嵌入高K金属栅（HKMG）集成电路中的结构和方法，其利用具有低多电阻和高编程/擦除速度的替代栅极技术。 在HKMG电路的更换栅极处理之后，在NVM器件的顶表面上形成的硅化物层防止接触形成期间的多晶硅损伤并且提供低栅极电阻，从而提高NVM器件的编程/擦除速度。