公开(公告)号：US20180332483A1

公开(公告)日：2018-11-15

申请号：US15776528

申请日：2016-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaesik YOON ,  Dongjin LEE ,  Changsung LEE ,  Junyoung CHO ,  Jungah CHOI

IPC: H04W24/02 ,  H04L12/24 ,  H04L5/00 ,  H04W16/18

CPC classification number: H04W24/02 ,  H04L5/006 ,  H04L41/0816 ,  H04W16/18 ,  H04W24/04 ,  H04W24/08

Abstract: The present invention relates to method and device for sharing state related information among a plurality of electronic devices and, more particularly, to method and device for predicting the state of a device on the basis of information shared among a plurality of electronic devices. In order to attain the purpose, a method for sharing state related information of a device, according to an embodiment of the present invention, comprises the steps of: generating a state model of a device on the basis of state related data; selecting one or more parameters for determining the state of the device on the basis of the generated state model; and transmitting the one or more selected parameters to at least one other device.

公开(公告)号：US20160308000A1

公开(公告)日：2016-10-20

申请号：US15194066

申请日：2016-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsoo KIM ,  Dongjin LEE ,  Dongsoo WOO ,  Jun-Bum LEE ,  SANG-IL HAN

IPC: H01L29/06 ,  H01L27/24 ,  H01L27/108 ,  H01L27/22 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/0653 ,  H01L27/088 ,  H01L27/10805 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device may include a semiconductor substrate including an active region defined by a trench, a device isolation layer provided in the trench to surround the active region, a gate electrode extending in a direction crossing the active region, and formed on the active region and the device isolation layer, and a gate insulating layer between the active region and the gate electrode. The active region may have a first conductivity type, and the device isolation layer may include a first silicon oxide layer on an inner surface of the first trench and a different layer, selected from one of first metal oxide layer and a negatively-charged layer, on the first silicon oxide layer.

公开(公告)号：US20160240619A1

公开(公告)日：2016-08-18

申请号：US15011820

申请日：2016-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin LEE ,  Junsoo KIM ,  Moonyoung JEONG ,  Satoru YAMADA ,  Dongsoo WOO ,  Jiyoung KIM

IPC: H01L29/40 ,  H01L29/423 ,  H01L27/088

CPC classification number: H01L29/402 ,  H01L27/088 ,  H01L27/10876 ,  H01L29/42392

Abstract: A semiconductor device may include a device isolation region configured to define an active region in a substrate, an active gate structure disposed in the active region, and a field gate structure disposed in the device isolation region. The field gate structure may include a gate conductive layer. The active gate structure may include an upper active gate structure including a gate conductive layer and a lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure. The lower active gate structure may include a gate conductive layer. A top surface of the gate conductive layer of the field gate structure is located at a lower level than a bottom surface of the gate conductive layer of the upper active gate structure.

Abstract translation: 半导体器件可以包括被配置为在衬底中限定有源区的器件隔离区，设置在有源区中的有源栅极结构以及设置在器件隔离区中的场栅结构。 场栅结构可以包括栅极导电层。 有源栅极结构可以包括上有源栅极结构，其包括形成在上有源栅极结构下方并与上有源栅极结构垂直间隔开的栅极导电层和下有源栅极结构。 下部有源栅极结构可以包括栅极导电层。 场栅结构的栅极导电层的顶表面位于比上有源栅极结构的栅极导电层的底表面更低的水平处。