公开(公告)号：US09299873B2

公开(公告)日：2016-03-29

申请号：US14270760

申请日：2014-05-06

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Anna Muscara'

IPC: H01L31/107 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract translation: 雪崩光电二极管包括阴极区域和阳极区域。 包括阻挡区域和绝缘区域的横向绝缘区域围绕阳极区域。 阴极区域在阴极区域的核心内形成平面光导，引导件构造成引导在雪崩期间产生的光子。 阻挡区域具有延伸穿过平面光引导件的厚度以围绕芯部并且防止光子传播超出阻挡区域。 核心形成了在核心内产生的少数载体的电气限制区域。

公开(公告)号：US11133424B2

公开(公告)日：2021-09-28

申请号：US16509040

申请日：2019-07-11

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Pietro Paolo Barbarino ,  Domenico Pierpaolo Mello ,  Antonella Sciuto

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/16 ,  H01L33/38

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm−3.

公开(公告)号：US11037965B2

公开(公告)日：2021-06-15

申请号：US16654910

申请日：2019-10-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Alfio Russo

IPC: H01L27/14 ,  G01N21/85 ,  H01L27/144 ,  G01N21/31 ,  G01N21/05 ,  H01L31/18 ,  H01L31/0216 ,  G01N21/61 ,  H01L31/108 ,  H01L31/00 ,  H01L31/0312 ,  H01L31/103 ,  G01N21/33 ,  G01M15/10

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

公开(公告)号：US20200052147A1

公开(公告)日：2020-02-13

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20200013915A1

公开(公告)日：2020-01-09

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US10371572B2

公开(公告)日：2019-08-06

申请号：US15900049

申请日：2018-02-20

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146 ,  H01L31/101 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

公开(公告)号：US10209125B2

公开(公告)日：2019-02-19

申请号：US15920200

申请日：2018-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L31/107 ,  G01J1/42 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  F23N5/08 ,  G01J5/00 ,  H01L31/103 ,  H01L31/09 ,  G01J5/20 ,  H01L27/146

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US09806216B2

公开(公告)日：2017-10-31

申请号：US15052695

申请日：2016-02-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo

IPC: H01L31/108 ,  G01J5/22 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/18 ,  H01L27/144 ,  G01K7/01

CPC classification number: H01L31/108 ,  G01J5/22 ,  G01K7/01 ,  H01L27/1443 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1812 ,  H02S40/44

Abstract: A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band. Moreover, the first and second UV detectors have coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

公开(公告)号：US20170098730A1

公开(公告)日：2017-04-06

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US20160349108A1

公开(公告)日：2016-12-01

申请号：US14960131

申请日：2015-12-04

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.

Abstract translation: 用于检测紫外线辐射的组成的集成电子装置包括由具有第一类导电性的半导体材料形成的阴极区域。 第一阳极区域和第二阳极区域相对于彼此横向交错并且被设置为与阴极区域接触。 阴极区域和第一阳极区域形成第一传感器。 阴极区域和第二阳极区域形成第二传感器。 在由UVA波段和UVB波段形成的光谱范围内，第一和第二传感器分别具有彼此不同的第一光谱响应度和第二光谱响应度。