公开(公告)号：US12166141B2

公开(公告)日：2024-12-10

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L21/74 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L27/146

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US11335823B2

公开(公告)日：2022-05-17

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/0312 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L27/144

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US10461209B2

公开(公告)日：2019-10-29

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US10416142B2

公开(公告)日：2019-09-17

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L31/103 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/144 ,  G01N33/00 ,  G01N27/414 ,  G01N21/84 ,  G01N21/33 ,  G01N21/31 ,  G01N21/25

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US20170314989A1

公开(公告)日：2017-11-02

申请号：US15375741

申请日：2016-12-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01J1/42 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/0312 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  G01J5/00 ,  H01L31/18 ,  F23N5/08

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US09685575B2

公开(公告)日：2017-06-20

申请号：US14640663

申请日：2015-03-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/101 ,  H01L31/108

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US11670730B2

公开(公告)日：2023-06-06

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US11049990B2

公开(公告)日：2021-06-29

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20180284090A1

公开(公告)日：2018-10-04

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L. ,  Consiglio Nazionale delle Ricerche - CNR

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01N33/00 ,  G01N21/84 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/101

CPC classification number: G01N33/0047 ,  G01N21/251 ,  G01N21/255 ,  G01N21/31 ,  G01N21/33 ,  G01N21/8422 ,  G01N27/4141 ,  G01N33/0031 ,  G01N33/0067 ,  H01L27/1443 ,  H01L31/02024 ,  H01L31/02327 ,  H01L31/1013 ,  H01L31/103

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US09933301B2

公开(公告)日：2018-04-03

申请号：US14960131

申请日：2015-12-04

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Paolo Badalà

IPC: G01J1/42 ,  H01L27/146 ,  H01L31/101 ,  H01L31/108

CPC classification number: G01J1/429 ,  H01L27/14621 ,  H01L27/14683 ,  H01L31/1013 ,  H01L31/108

Abstract: An integrated electronic device for detecting the composition of ultraviolet radiation includes a cathode region formed by a semiconductor material with a first type of conductivity. A first anode region and a second anode region are laterally staggered with respect to one another and are set in contact with the cathode region. The cathode region and the first anode region form a first sensor. The cathode region and the second anode region form a second sensor. In a spectral range formed by the UVA band and by the UVB band, the first and second sensors have, respectively, a first spectral responsivity and a second spectral responsivity different from one another.