公开(公告)号：US11961933B2

公开(公告)日：2024-04-16

申请号：US17534159

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US11337617B2

公开(公告)日：2022-05-24

申请号：US16037328

申请日：2018-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Rundo ,  Piero Fallica ,  Sabrina Conoci ,  Salvatore Petralia ,  Massimo Cataldo Mazzillo

IPC: G06K9/00 ,  A61B5/00 ,  G16H10/60 ,  A61B5/349 ,  A61B5/024 ,  G16H50/00 ,  G06V40/10

Abstract: In an embodiment, PhotoPlethysmoGraphy (PPG) signals are processed by detecting peaks and valleys in the PPG signal, segmenting the PPG signal to provide a time series of PPG waveforms located between two subsequent valleys in the PPG signal, applying to the waveforms in the time series pattern recognition with respect to a reference PPG waveform pattern produced based on a mathematical model of the PPG signal by assigning to the waveforms in the time series a recognition score. A resulting PPG signal is produced by retaining the waveforms in the time series having an assigned recognition score reaching a recognition threshold, and discarding the waveforms in the time series having an assigned recognition score failing to reach the recognition threshold.

公开(公告)号：US10700220B2

公开(公告)日：2020-06-30

申请号：US16228483

申请日：2018-12-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  H01L27/146 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US10483298B2

公开(公告)日：2019-11-19

申请号：US15583750

申请日：2017-05-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Alfio Russo

IPC: H01L27/00 ,  H01L31/0216 ,  G01N21/85 ,  H01L27/144 ,  G01N21/31 ,  G01N21/05 ,  H01L31/18 ,  G01N21/61 ,  H01L31/00 ,  H01L31/0312 ,  H01L31/103 ,  H01L31/108 ,  G01N21/33 ,  G01M15/10

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

公开(公告)号：US10461209B2

公开(公告)日：2019-10-29

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US10416142B2

公开(公告)日：2019-09-17

申请号：US15782626

申请日：2017-10-12

Applicant: STMicroelectronics S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: H01L31/103 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/02 ,  H01L27/144 ,  G01N33/00 ,  G01N27/414 ,  G01N21/84 ,  G01N21/33 ,  G01N21/31 ,  G01N21/25

Abstract: An optoelectronic device for detecting volatile organic compounds is described, including a die with a semiconductor body, the die forming a MOSFET transistor and at least one photodiode. The optoelectronic device is optically couplable to an optical source that emits radiation with a spectrum at least partially overlapping the absorption spectrum range of the semiconductor body. The MOSFET transistor is planar and includes a gate region and a catalytic region that is arranged on the gate region such that, in the presence of a gas mixture including volatile organic compounds, the MOSFET transistor can be biased to generate an electrical signal indicating the overall concentration of the gas mixture. The photodiode generates a photocurrent that is a function of the concentration of one or more polycyclic aromatic hydrocarbons present in the gas mixture.

公开(公告)号：US10205036B2

公开(公告)日：2019-02-12

申请号：US15868929

申请日：2018-01-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L27/146

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US09899544B1

公开(公告)日：2018-02-20

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/07 ,  H01L31/0216 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20180033895A1

公开(公告)日：2018-02-01

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/0216 ,  G01J1/44 ,  H01L31/02 ,  H01L27/144 ,  H01L31/107

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20170314989A1

公开(公告)日：2017-11-02

申请号：US15375741

申请日：2016-12-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01J1/42 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/0312 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  G01J5/00 ,  H01L31/18 ,  F23N5/08

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.