公开(公告)号：US20180053660A1

公开(公告)日：2018-02-22

申请号：US15673320

申请日：2017-08-09

申请人： Lam Research Corporation

发明人： Adam Jandl ,  Sema Ermez ,  Lawrence Schloss ,  Sanjay Gopinath ,  Michal Danek ,  Siew Neo ,  Joshua Collins ,  Hanna Bamnolker

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/28568 ,  H01L21/76816 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76898 ,  H01L27/10891

摘要： Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

公开(公告)号：US20170350008A1

公开(公告)日：2017-12-07

申请号：US15171187

申请日：2016-06-02

申请人： Lam Research Corporation

发明人： Joshua Collins ,  Siew Neo ,  Hanna Bamnolker ,  Kapil Umesh Sawlani

IPC分类号： C23C16/455

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45527

摘要： A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WClx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.

公开(公告)号：US20170133231A1

公开(公告)日：2017-05-11

申请号：US15415800

申请日：2017-01-25

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Raashina Humayun ,  Deqi Wang ,  Yan Guan

IPC分类号： H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L21/28556 ,  C23C16/0209 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266

摘要： Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.