公开(公告)号：US20220336630A1

公开(公告)日：2022-10-20

申请号：US17454306

申请日：2021-11-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hiroshi ONO ,  Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H01L29/43

摘要： According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.

公开(公告)号：US20220190150A1

公开(公告)日：2022-06-16

申请号：US17158078

申请日：2021-01-26

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Matthew David SMITH ,  Hiroshi ONO ,  Yosuke KAJIWARA ,  Akira MUKAI ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/423

摘要： According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.

公开(公告)号：US20220140125A1

公开(公告)日：2022-05-05

申请号：US17576840

申请日：2022-01-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Daimotsu KATO ,  Hiroshi ONO ,  Tatsuo SHIMIZU ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Akira MUKAI ,  Po-Chin HUANG ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/51

摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first member, and a first insulating member. The first semiconductor layer includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20210327711A1

公开(公告)日：2021-10-21

申请号：US17141461

申请日：2021-01-05

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/04

摘要： According to one embodiment, a semiconductor device includes a first transistor, and a first mounting member. The first transistor includes a nitride semiconductor layer and includes a first element electrode, a second element electrode, and a third element electrode. The first mounting member includes a first frame electrode, a plurality of first frame connection members electrically connecting the first element electrode and the first frame electrode, a first pad electrode, and a first pad connection member electrically connecting the first element electrode and the first pad electrode.

公开(公告)号：US20210234012A1

公开(公告)日：2021-07-29

申请号：US17015299

申请日：2020-09-09

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Hiroshi ONO ,  Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride member. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The nitride member includes a first nitride layer and a second nitride layer. The first nitride layer includes first, second, and third partial regions. The first electrode includes first, second, and third conductive portions, and a first conductive layer. The first, second, third conductive portions, and a portion of the second nitride layer are between the first partial region and the first conductive layer. The first, second, and third conductive portions are electrically connected to the first conductive layer. The second nitride layer includes a first region between the first and second conductive portions.

公开(公告)号：US20200335587A1

公开(公告)日：2020-10-22

申请号：US16787351

申请日：2020-02-11

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Hiroshi ONO ,  Akira MUKAI ,  Yosuke KAJIWARA ,  Daimotsu KATO ,  Aya SHINDOME ,  Masahiko KURAGUCHI

IPC分类号： H01L29/205 ,  H01L29/207 ,  H01L29/20 ,  H01L29/778 ,  H01L29/423 ,  H01L29/51 ,  H01L29/40 ,  H01L23/29

摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.

公开(公告)号：US20170278934A1

公开(公告)日：2017-09-28

申请号：US15392210

申请日：2016-12-28

申请人： Kabushiki Kaisha Toshiba

发明人： Yosuke KAJIWARA ,  Kentaro IKEDA ,  Hisashi SAITO ,  Masahiko KURAGUCHI

IPC分类号： H01L29/417 ,  H01L23/535 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/4175 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/535 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

摘要： A semiconductor device according to an embodiment includes: a substrate having a first plane and a second plane provided on the opposite side of the first plane; a first nitride semiconductor layer provided on the first plane; source electrodes provided on the first nitride semiconductor layer; drain electrodes provided on the first nitride semiconductor layer, each of the drain electrodes provided between the source electrodes; gate electrodes provided on the first nitride semiconductor layer, each of the gate electrodes provided between each of the source electrodes and each of the drain electrodes; a first wire provided on the second plane and electrically connected to the source electrodes; a second wire electrically connected to the drain electrodes; a third wire provided on the second plane and electrically connected to the gate electrodes; and an insulating interlayer provided between the first nitride semiconductor layer and the second wire.