公开(公告)号：US20210372784A1

公开(公告)日：2021-12-02

申请号：US17069177

申请日：2020-10-13

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Gilad Laredo ,  Amnon Manassen ,  Avner Safrani

IPC: G01B11/27

Abstract: A metrology system may include an imaging sub-system to image a metrology target buried in a sample, where the sample is formed from bonded first and second substrates with a metrology target at the interface. The metrology system may further include an illumination sub-system with an illumination field stop and an illumination pupil, where the illumination field stop includes an aperture to provide that a projected size of the field-stop aperture on a measurement plane corresponding to the metrology target matches a field of view of the detector at the measurement plane, and where the illumination pupil includes a central obscuration to provide oblique illumination of the metrology target with angles greater than a cutoff angle selected to prevent illumination from the illumination source from reflecting off of the bottom surface of the sample and through the field of view of the detector at the measurement plane.

公开(公告)号：US20250138435A1

公开(公告)日：2025-05-01

申请号：US18383612

申请日：2023-10-25

Applicant: KLA Corporation

Inventor： Jonathan Madsen ,  Ido Dolev ,  Daria Negri ,  Andrew V. Hill ,  Izhar Agam ,  Amnon Manassen ,  Oren Lahav ,  Ohad Bachar ,  Yossi Simon ,  Yoram Uziel

IPC: G03F7/00

Abstract: A measurement system may include two or more sets of optical sub-systems to simultaneously generate measurement data on two or more samples, a coarse translation stage providing motion along a plane, two or more fine translation stages disposed on the coarse translation stage arranged in a common pattern as the two or more sets of optical sub-systems, where each of the fine translation stages provides motion along the plane and is arranged to position one of the two or more samples under one of the two or more sets of optical sub-systems. The system may further include a controller to independently direct each of the fine translation stages and the associated one of the optical sub-systems to generate measurement data for the respective samples, and generate one or more measurements for the samples based on the associated measurement data.

公开(公告)号：US12165930B2

公开(公告)日：2024-12-10

申请号：US17705077

申请日：2022-03-25

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Vladimir Levinski ,  Daria Negri ,  Nireekshan K. Reddy

IPC: H01L21/66 ,  G06F16/215 ,  G06F18/2135

Abstract: An adaptive modeling method for generating misregistration data for a semiconductor device wafer (SDW) including calculating a fitting function for a group of SDWs (GSDW) having units, including measuring an SDW in said GSDW, thereby generating test data sets corresponding to the units, removing non-unit-specific values (NUSVs) from the test data sets, thereby generating cleaned test data sets, and analyzing the cleaned test data sets, thereby generating the fitting function, and generating misregistration data for at least one additional SDW (ASDW) in the GSDW, including measuring the ASDW, thereby generating run data sets, removing NUSVs from the run data sets, thereby generating cleaned run data sets, fitting each of the cleaned run data sets to the fitting function, thereby generating coefficient sets, and calculating misregistration data for the ASDW, at least partially based on the fitting function and the coefficient sets.

公开(公告)号：US20240280914A1

公开(公告)日：2024-08-22

申请号：US18110746

申请日：2023-02-16

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew V. Hill ,  Vladimir Levinski

IPC: G03F7/20 ,  G01B9/02 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B9/02043 ,  G01B9/02084 ,  G01B11/272

Abstract: An overlay metrology system may include illumination optics to split illumination from an illumination source into primary and secondary illumination and direct the primary illumination to a sample including an overlay target with gratings in two or more layers and an objective lens to collect positive and negative diffraction from the constituent gratings. The system may further include collection optics to overlap the auxiliary illumination with at least some of the collected diffraction lobes to generate time-varying interference signals. The system may further include a controller to generate overlay measurements based on the time-varying interference signals.

公开(公告)号：US12066322B2

公开(公告)日：2024-08-20

申请号：US17986592

申请日：2022-11-14

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew V. Hill ,  Yonatan Vaknin ,  Avner Safrani

IPC: G01J1/04 ,  G03F7/00

CPC classification number: G01J1/0407 ,  G03F7/70316

Abstract: An overlay metrology system may include an objective lens, illumination optics to illuminate an overlay target including a first grating with a first pitch on a first sample layer and a second grating with a second pitch on a second sample layer, where the first and second sample layers are separated by a layer separation distance greater than a depth of field of the objective lens. The system may further include collection optics with a radially-varying defocus distribution to compensate for the layer separation distance such that the first and second gratings are simultaneously in focus on the detector.

公开(公告)号：US11841621B2

公开(公告)日：2023-12-12

申请号：US17562844

申请日：2021-12-27

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Vladimir Levinski ,  Amnon Manassen ,  Yuri Paskover

IPC: G03F7/00 ,  G01B11/14 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B11/272

Abstract: An overlay metrology system may scan a sample including inverted Moiré structure pairs along a scan direction, include an illumination sub-system to illuminate first and second Moiré structures of one of an inverted Moiré structure pair with common mutually coherent illumination beam distributions, and include an objective lens to capture at least +/−1 diffraction orders from sample, where a first pupil plane includes overlapping distributions of the collected light with an interference pattern associated with relative wavefront tilt. The system may also include a diffractive element in the first pupil plane, where one diffraction order associated with the first Moiré structure and one diffraction order associated with the second Moiré structure overlap at a common overlap region in a field plane, and a collection field stop located in the field plane to pass light in the common overlap region and block remaining light and remove the relative wavefront tilt.

公开(公告)号：US11726410B2

公开(公告)日：2023-08-15

申请号：US17351137

申请日：2021-06-17

Applicant: KLA Corporation

Inventor： Eitan Hajaj ,  Amnon Manassen ,  Shlomo Eisenbach ,  Anna Golotsvan ,  Yoav Grauer ,  Eugene Maslovsky

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  H01L22/12

Abstract: A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.

公开(公告)号：US11713959B2

公开(公告)日：2023-08-01

申请号：US17204595

申请日：2021-03-17

Applicant: KLA Corporation

Inventor： Andrei V. Shchegrov ,  Ido Dolev ,  Yoram Uziel ,  Amnon Manassen

IPC: G01B9/02001 ,  G01B11/27

CPC classification number: G01B9/0201 ,  G01B11/272

Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.

公开(公告)号：US20230197483A1

公开(公告)日：2023-06-22

申请号：US16762107

申请日：2020-04-05

Applicant: KLA Corporation

Inventor： Vladimir Levinski ,  Daria Negri ,  Amnon Manassen

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67259 ,  H01L22/12 ,  H01L22/26

Abstract: A method for correcting misregistration measurements of a semiconductor wafer for errors therein arising from tilt of the wafer including measuring, for at least one location on a wafer, a difference between a Tool Induced Shift (TIS) of a metrology device in a first illumination arrangement with respect to the wafer wherein a surface of the wafer is generally orthogonally illuminated by an illumination source of the metrology device and a TIS of the metrology device in a second illumination arrangement with respect to the wafer, wherein the surface is obliquely illuminated by the illumination source, and correcting a misregistration measurement measured by the metrology device at the at least one location for errors therein arising from tilt of the wafer at the location by subtracting from the misregistration measurement a weighted value of the difference between the TIS in the first and second illumination arrangements.

公开(公告)号：US11615974B2

公开(公告)日：2023-03-28

申请号：US16483599

申请日：2019-07-05

Applicant: KLA CORPORATION

Inventor： Amnon Manassen ,  Tzahi Grunzweig ,  Einat Peled ,  Anna Golotsvan

IPC: H01L21/67 ,  G06N10/00 ,  G05B19/401 ,  G05B19/4063 ,  G05B19/418

Abstract: Systems and methods of optimizing wafer transport and metrology measurements in a fab are provided. Methods comprise deriving and updating dynamic sampling plans that provide wafer-specific measurement sites and conditions, deriving optimized wafer measurement paths for metrology measurements of the wafers that correspond to the dynamic sampling plan, managing FOUP (Front Opening Unified Pod) transport through the fab, transporting wafers to measurement tools while providing the dynamic sampling plans and the wafer measurement paths to the respective measurement tools before or as the FOUPs with the respective wafers are transported thereto, and carrying out metrology and/or inspection measurements of the respective wafers by the respective measurement tools according to the derived wafer measurement paths. Quantum computing resources may be used to solve the corresponding specific optimization problems, to reduce the required time, improve the calculated solutions and improve the fab yield and accuracy of the produced wafers.