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31.
公开(公告)号:US20240088328A1
公开(公告)日:2024-03-14
申请号:US18263567
申请日:2021-10-22
Applicant: BOE Technology Group Co., Ltd.
Inventor: Bin QIN , Kuanjun PENG , Weixing LIU , Fangzhen ZHANG , Xue DONG , Jintao PENG , Wanpeng TENG , Xiaolong LI , Shuang SUN , Wanzhi CHEN , Guangcai YUAN , Qian JIA
CPC classification number: H01L33/385 , H01L27/15 , H01L33/06 , H01L33/145 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/642
Abstract: A light-emitting device, a light-emitting substrate, and a method for manufacturing the light-emitting device. The light-emitting device includes at least one light-emitting structure. The light-emitting structure includes: a first semiconductor layer; a light-emitting layer; a second semiconductor layer, doping ions of the second semiconductor layer and a first semiconductor layer being oppositely charged; a barrier structure provided with an opening for exposing the second semiconductor layer, the orthographic projection of the opening on the base substrate being located in the orthographic projection of the light-emitting layer on the base substrate, and the area of the opening being smaller than that of the light-emitting layer; and a landing electrode located on the side of the barrier structure facing away from the second semiconductor layer, the landing electrode being in contact with the second semiconductor layer by means of the opening.
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公开(公告)号:US20210265439A1
公开(公告)日:2021-08-26
申请号:US17255866
申请日:2020-04-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jintao PENG , Yanan NIU , Kuanjun PENG , Kai GUO , Bin QIN , Xiaolong LI , Wanpeng TENG
IPC: H01L27/32
Abstract: The present disclosure provides a pixel compensation circuit and a manufacturing method thereof, an OLED array substrate and a manufacturing method thereof, and a display device. The pixel compensation circuit includes a first TFT and a second TFT on a substrate. The first TFT includes: a first electrode on the substrate, a first interlayer dielectric layer on a side of the first electrode away from the substrate and having an opening exposing at least a portion of the first electrode; a second electrode on a side of the first interlayer dielectric layer away from the first electrode; and an active layer extending from the second electrode to the first electrode. The second TFT includes: an active layer on the substrate; and a first electrode and a second electrode in a same layer and on a side of the active layer of the second TFT away from the substrate.
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33.
公开(公告)号:US20210193700A1
公开(公告)日:2021-06-24
申请号:US16077777
申请日:2017-12-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaolong LI , Dong LI , Huijuan ZHANG , Zheng LIU
IPC: H01L27/12
Abstract: A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The thin film transistor includes a gate, a source, a drain, and an active layer. Forming the active layer includes: forming a pattern comprising a thermal insulation layer; forming a pattern comprising an amorphous silicon layer on the thermal insulation layer, wherein the pattern comprising the amorphous silicon layer includes a first portion on the thermal insulation layer and a second portion extending beyond the thermal insulation layer; and treating the pattern comprising the amorphous silicon layer with a laser annealing process, so that the amorphous silicon layer grows grain in a direction from the second portion to the first portion to form the active layer from polycrystalline silicon.
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公开(公告)号:US20210025768A1
公开(公告)日:2021-01-28
申请号:US16832567
申请日:2020-03-27
Applicant: BOE Technology Group Co., Ltd.
Inventor: Meng ZHAO , Xiaolong LI , Zheng LIU , Chunyang WANG
Abstract: The present disclosure relates to the field of display technologies, and discloses a display panel, a preparing method thereof, and a display device. The display panel has a bending area, and the display panel includes a sensing component; the sensing component includes a differential bridge connection circuit composed of a first strain sensor, a second strain sensor, a third strain sensor, and a fourth strain sensor; the first strain sensor, the second strain sensor, the third strain sensor, and the fourth strain sensor are resistance transducers, and are located in the bending area; the first strain sensor and the fourth strain sensor constitute first opposite bridge arms; the second strain sensor and the third strain sensor constitute second opposite bridge arms, and the first opposite bridge arms and the second opposite bridge arms are separately located on two sides of a neutral layer of the display panel.
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公开(公告)号:US20200233124A1
公开(公告)日:2020-07-23
申请号:US16527751
申请日:2019-07-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Kai GUO , Xiaolong LI , Xueling GAO , Kuanjun PENG , Shengnan LI , Weixing LIU
Abstract: The present disclosure provides a structured light generator. The structured light generator includes a transparent substrate, a plurality of transflective structure layers disposed on one side of the transparent substrate and mutually laminated and parallel, wherein distances between any two adjacent transflective structure layers are equal and 0.1λ to 10λ, λ being a wavelength of incident light, and a transparent filling layer disposed between any two adjacent transflective structure layers.
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公开(公告)号:US20200013804A1
公开(公告)日:2020-01-09
申请号:US16503053
申请日:2019-07-03
Inventor: Wenqing XU , Xiaolong LI , Xiaoxiang ZHANG , Mingxuan LIU , Zumou WU , Huibin GUO , Yongzhi SONG
IPC: H01L27/12 , G02F1/1362 , H01L27/32
Abstract: An array substrate includes a base substrate, a plurality of signal lines disposed at a side of the base substrate, and an organic layer disposed at a side of the plurality of signal lines facing away from the base substrate. The organic layer includes at least one auxiliary portion and a reference portion surrounding the at least one auxiliary portion, and a thickness of each auxiliary portion is less than a thickness of the reference portion.
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公开(公告)号:US20190392768A1
公开(公告)日:2019-12-26
申请号:US16436238
申请日:2019-06-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaolong LI , Wei QIN , Kuanjun PENG , Xueling GAO , Chengchung YANG , Zhiqiang XU
IPC: G09G3/3266
Abstract: The present application provides a display panel, a method of driving the same and a display apparatus. The display panel has pixel regions, each of which has pixel structures. Each of the pixel structures includes an anode, a cathode and a light emitting layer. The display panel further includes a controller and power signal lines coupled to the controller. Cathodes or anodes in a same pixel region are coupled to a same power signal line. The controller is configured to control a duty cycle of a control signal input to a power signal line coupled to a pixel region in response to a motion picture being displayed in the pixel region.
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公开(公告)号:US20190086714A1
公开(公告)日:2019-03-21
申请号:US16009536
申请日:2018-06-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Wei QIN , Xiaolong LI
IPC: G02F1/1335 , G02F1/1362 , G02F1/1368 , G02F1/163 , G02F1/155
Abstract: A transparent display panel is provided, including a liquid crystal cell, a chromic material and a trigger component. The liquid crystal cell includes an array substrate and a first transparent substrate disposed opposite each other. A liquid crystal layer is arranged between the array substrate and the first transparent substrate. The chromic material is arranged at a side of the first transparent substrate away from the array substrate. The trigger component is connected to the chromic material for enabling the chromic material to perform a reversible change between a transparent state and a colored state.
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公开(公告)号:US20190027587A1
公开(公告)日:2019-01-24
申请号:US15989773
申请日:2018-05-25
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaolong LI , Zunqing SONG , Xiaowei XU , Dong LI
IPC: H01L29/66 , H01L21/265 , H01L21/324 , H01L21/768
Abstract: The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.
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40.
公开(公告)号:US20170200745A1
公开(公告)日:2017-07-13
申请号:US15393030
申请日:2016-12-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jian MIN , Xiaolong LI , Zhengyin XU , Tao GAO , Dong LI , Shuai ZHANG
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/127 , H01L27/1288 , H01L29/78618 , H01L29/78675 , H01L29/78696
Abstract: A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The method comprises forming an active layer on a substrate, wherein source-and-drain-to-be-formed regions of the active layer are thicker than a semiconductor region between the source-and-drain-to-be-formed regions, and by a patterning process, forming a gate on the active layer, and forming a pattern of source and drain in the source-and-drain-to-be-formed regions of the active layer.
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